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Holalkere Chandrasekhar
Holalkere Chandrasekhar
University of Missouri, Columbia, MO, Professor of Physics,
Dirección de correo verificada de missouri.edu
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Infrared and Raman spectra of the IV-VI compounds SnS and SnSe
HR Chandrasekhar, RG Humphreys, U Zwick, M Cardona
Physical Review B 15 (4), 2177, 1977
5751977
Optical and structural properties of ZnO films deposited on GaAs by pulsed laser deposition
YR Ryu, S Zhu, JD Budai, HR Chandrasekhar, PF Miceli, HW White
Journal of Applied Physics 88 (1), 201-204, 2000
3292000
High-pressure studies of GaAs-As quantum wells of widths 26 to 150 Å
U Venkateswaran, M Chandrasekhar, HR Chandrasekhar, BA Vojak, ...
Physical Review B 33 (12), 8416, 1986
2071986
Temperature-dependent photoluminescence of organic semiconductors with varying backbone conformation
S Guha, JD Rice, YT Yau, CM Martin, M Chandrasekhar, ...
Physical Review B 67 (12), 125204, 2003
150*2003
Planarity of para Hexaphenyl
S Guha, W Graupner, R Resel, M Chandrasekhar, HR Chandrasekhar, ...
Physical review letters 82 (18), 3625, 1999
1231999
Study of the localized vibrations of boron in heavily doped Si
M Chandrasekhar, HR Chandrasekhar, M Grimsditch, M Cardona
Physical Review B 22 (10), 4825, 1980
1051980
Determination of the deformation-potential constant of the conduction band of silicon from the piezospectroscopy of donors
VJ Tekippe, HR Chandrasekhar, P Fisher, AK Ramdas
Physical Review B 6 (6), 2348, 1972
1041972
Nonparabolicity of the conduction band and the coupled plasmon-phonon modes in n-GaAs
HR Chandrasekhar, AK Ramdas
Physical Review B 21 (4), 1511, 1980
991980
Photoluminescence studies of a GaAs-As superlattice at 8300 K under hydrostatic pressure (070 kbar)
U Venkateswaran, M Chandrasekhar, HR Chandrasekhar, T Wolfram, ...
Physical Review B 31 (6), 4106, 1985
771985
Pressure tuning of strains in semiconductor heterostructures:(ZnSe epilayer)/(GaAs epilayer)
B Rockwell, HR Chandrasekhar, M Chandrasekhar, AK Ramdas, ...
Physical Review B 44 (20), 11307, 1991
761991
Raman scattering and infrared reflectivity in GeSe
HR Chandrasekhar, U Zwick
Solid State Communications 18 (11-12), 1509-1513, 1976
741976
Quantitative piezospectroscopy of the ground and excited states of acceptors in silicon
HR Chandrasekhar, P Fisher, AK Ramdas, S Rodriguez
Physical Review B 8 (8), 3836, 1973
691973
Luminescence and Raman spectra of CdS under hydrostatic pressure
U Venkateswaran, M Chandrasekhar, HR Chandrasekhar
Physical Review B 30 (6), 3316, 1984
681984
Primary optical excitations and excited-state interaction energies in sexithiophene
MA Loi, C Martin, HR Chandrasekhar, M Chandrasekhar, W Graupner, ...
Physical Review B 66 (11), 113102, 2002
572002
Infrared and Raman spectra and lattice dynamics of the superionic conductor Li 3 N
HR Chandrasekhar, G Bhattacharya, R Migoni, H Bilz
Physical Review B 17 (2), 884, 1978
561978
Long-wavelength phonons in mixed-valence semiconductor Sn II Sn IV S 3
HR Chandrasekhar, DG Mead
Physical Review B 19 (2), 932, 1979
541979
Tuning Intermolecular Interactions:  A Study of the Structural and Vibrational Properties of p-Hexaphenyl under Pressure
S Guha, W Graupner, R Resel, M Chandrasekhar, HR Chandrasekhar, ...
The Journal of Physical Chemistry A 105 (25), 6203-6211, 2001
512001
Pressure dependence of the Raman spectra of the IV-VI layer compounds GeS and GeSe
HR Chandrasekhar, RG Humphreys, M Cardona
Physical Review B 16 (6), 2981, 1977
491977
Geometry-dependent electronic properties of highly fluorescent conjugated molecules
SC Yang, W Graupner, S Guha, P Puschnig, C Martin, HR Chandrasekhar, ...
Physical review letters 85 (11), 2388, 2000
472000
Photoluminescence of short-period GaAs/AlAs superlattices: A hydrostatic pressure and temperature study
S Guha, Q Cai, M Chandrasekhar, HR Chandrasekhar, H Kim, ...
Physical Review B 58 (11), 7222, 1998
431998
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Artículos 1–20