Machine learning approach for predicting the effect of statistical variability in Si junctionless nanowire transistors H Carrillo-Nuñez, N Dimitrova, A Asenov, V Georgiev
IEEE Electron Device Letters 40 (9), 1366-1369, 2019
89 2019 Phonon-limited performance of single-layer, single-gate black phosphorus n - and p -type field-effect transistors A Szabo, R Rhyner, H Carrillo-Nunez, M Luisier
2015 IEEE International Electron Devices Meeting (IEDM), 12.1.1 - 12.1.4, 2015
35 2015 Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices H Carrillo-Nuñez, A Ziegler, M Luisier, A Schenk
Journal of Applied Physics 117 (23), 234501, 2015
33 2015 Nano‑electronic Simulation Software (NESS): a flexible nano‑device simulation platform S Berrada, H Carrillo‑Nunez, J Lee, C Medina‑Bailon, T Dutta, O Badami, ...
Journal of Computational Electronics, 2020
30 2020 Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk H Carrillo-Nuñez, M Luisier, A Schenk
Solid-State Electronics 113, 61-67, 2015
27 2015 Analysis of InAs-Si Heterojunction Nanowire Tunnel FETs: Extreme Confinement vs. Bulk H Carrillo-Nuñez, M Luisier, A Schenk
ESSDERC, Venice, Italy, 2014
27 2014 Simulation of the impact of ionized impurity scattering on the total mobility in Si nanowire transistors T Sadi, C Medina-Bailon, M Nedjalkov, J Lee, O Badami, S Berrada, ...
Materials 12 (1), 124, 2019
22 2019 Comprehensive study of cross-section dependent effective masses for silicon based gate-all-around transistors O Badami, C Medina-Bailon, S Berrada, H Carrillo-Nunez, J Lee, ...
Applied Sciences 9 (9), 1895, 2019
20 2019 NESS: new flexible Nano-Electronic Simulation Software S Berrada, H Carrillo-Nunez, T Dutta, M Duan, F Adamu-Lema, J Lee, ...
2018 International Conference on Simulation of Semiconductor Processes and …, 2018
20 2018 Mobility of circular and elliptical si nanowire transistors using a multi-subband 1d formalism C Medina Bailon, T Sadi, M Nedjalkov, H Carrillo-Nunez, J Lee, O Badami, ...
IEEE Electron Device Letters, 2019
15 2019 Understanding electromigration in Cu-CNT composite interconnects: A multiscale electrothermal simulation study J Lee, S Berrada, F Adamu-Lema, N Nagy, VP Georgiev, T Sadi, J Liang, ...
IEEE Transactions on Electron Devices 65 (9), 3884-3892, 2018
14 2018 Random dopant-induced variability in Si-InAs nanowire tunnel FETs: A quantum transport simulation study H Carrillo-Nuñez, J Lee, S Berrada, C Medina-Bailón, F Adamu-Lema, ...
IEEE Electron Device Letters 39 (9), 1473-1476, 2018
13 2018 Influence of electron–phonon interactions in single dopant nanowire transistors H Carrillo-Nuñez, M Bescond, N Cavassilas, E Dib, M Lannoo
Journal of Applied Physics 116, 164505, 2014
13 2014 Impact of Randomly Distributed Dopants on H Carrillo-Nunez, MM Mirza, DJ Paul, DA MacLaren, A Asenov, ...
IEEE Transactions on Electron Devices 65 (5), 1692-1698, 2018
12 2018 Localization of electronic states in finite ladder models: Participation ratio and localization length as measures of the wave-function extension H Carrillo-Nuñez, PA Schulz
Physical Review B 78 (23), 235404, 2008
10 2008 Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation C Medina-Bailon, H Carrillo-Nunez, J Lee, C Sampedro, JL Padilla, ...
Micromachines 11 (2), 204, 2020
9 2020 Schrödinger Equation Based Quantum Corrections in Drift-Diffusion: A Multiscale Approach T Dutta, C Medina-Bailon, H Carrillo-Nunez, O Badami, V Georgiev, ...
2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), 2019
9 2019 Design of High-Performance InAs-Si Heterojunction 2D-2D Tunnel FETs With Lateral and Vertical Tunneling Paths H Carrillo-Nuñez, M Luisier, A Schenk
IEEE Transactions on Electron Devices 63 (12), 5041 - 5047, 2016
9 2016 Variability Predictions for the Next Technology Generations of n -type Six 1−x Nanowire MOSFETs J Lee, O Badami, H Carrillo-Nuñez, S Berrada, C Medina-Bailon, T Dutta, ...
Micromachines 9 (12), 643, 2018
8 2018 Effect of surface roughness and phonon scattering on extremely narrow InAs-Si Nanowire TFETs H Carrillo-Nunez, R Rhyner, M Luisier, A Schenk
2016 46th European Solid-State Device Research Conference (ESSDERC), 188-191, 2016
8 2016 
Vihar P. GeorgievProfessor of Nanoelectronics at University of GlasgowDirección de correo verificada de glasgow.ac.uk
