| Structural and optoelectronic characterization of RF sputtered ZnSnN2 L Lahourcade, NC Coronel, KT Delaney, SK Shukla, NA Spaldin, ... Adv. Mater 25 (18), 2562-2566, 2013 | 221 | 2013 |
| Critical impact of Ehrlich–Schwöbel barrier on GaN surface morphology during homoepitaxial growth NAK Kaufmann, L Lahourcade, B Hourahine, D Martin, N Grandjean Journal of Crystal Growth 433, 36-42, 2016 | 82 | 2016 |
| Plasma-assisted molecular-beam epitaxy of AlN (112¯ 2) on m sapphire L Lahourcade, E Bellet-Amalric, E Monroy, M Abouzaid, P Ruterana Applied Physics Letters 90 (13), 2007 | 77 | 2007 |
| Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells M Shahmohammadi, W Liu, G Rossbach, L Lahourcade, A Dussaigne, ... Physical Review B 95 (12), 125314, 2017 | 53 | 2017 |
| Defect structure in heteroepitaxial semipolar ()(Ga, Al) N YAR Dasilva, MP Chauvat, P Ruterana, L Lahourcade, E Monroy, G Nataf Journal of Physics: Condensed Matter 22 (35), 355802, 2010 | 50 | 2010 |
| Interband and intersubband optical characterization of semipolar (112 2)-oriented GaN/AlN multiple-quantum-well structures L Lahourcade, PK Kandaswamy, J Renard, P Ruterana, H Machhadani, ... Applied Physics Letters 93 (11), 2008 | 49 | 2008 |
| Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN (112¯ 2): Effect on the structural and optical properties L Lahourcade, J Renard, B Gayral, E Monroy, MP Chauvat, P Ruterana Journal of Applied Physics 103 (9), 2008 | 45 | 2008 |
| Room-Temperature Transport of Indirect Excitons in Quantum Wells F Fedichkin, T Guillet, P Valvin, B Jouault, C Brimont, T Bretagnon, ... Physical Review Applied 6 (1), 014011, 2016 | 36 | 2016 |
| Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations R Butté, L Lahourcade, TK Uždavinys, G Callsen, M Mensi, M Glauser, ... Applied Physics Letters 112 (3), 2018 | 35 | 2018 |
| Mg doping and its effect on the semipolar GaN (112¯ 2) growth kinetics L Lahourcade, J Pernot, A Wirthmüller, MP Chauvat, P Ruterana, A Laufer, ... Applied Physics Letters 95 (17), 2009 | 32 | 2009 |
| Morphology and strain of self-assembled semipolar GaN quantum dots in (112¯ 2) AlN GP Dimitrakopulos, E Kalesaki, J Kioseoglou, T Kehagias, A Lotsari, ... Journal of Applied Physics 108 (10), 2010 | 25 | 2010 |
| Earth-abundant ZnSnxGe1−xN2alloys as potential photovoltaic absorber materials NC Coronel, L Lahourcade, KT Delaney, AM Shing, HA Atwater 2012 38th IEEE Photovoltaic Specialists Conference, 003204-003207, 2012 | 24 | 2012 |
| Stranski–Krastanow growth of (112¯ 2)-oriented GaN/AlN quantum dots L Lahourcade, S Valdueza-Felip, T Kehagias, GP Dimitrakopulos, ... Applied Physics Letters 94 (11), 2009 | 21 | 2009 |
| Impact of surface morphology on the properties of light emission in InGaN epilayers TK Uždavinys, S Marcinkevičius, M Mensi, L Lahourcade, JF Carlin, ... Applied Physics Express 11 (5), 051004, 2018 | 16 | 2018 |
| Influence of deposition conditions on nanocrystalline InN layers synthesized on Si (1 1 1) and GaN templates by RF sputtering S Valdueza-Felip, FB Naranjo, M González-Herráez, L Lahourcade, ... Journal of crystal growth 312 (19), 2689-2694, 2010 | 16 | 2010 |
| Interfacial structure of semipolar AlN grown on m‐plane sapphire by MBE T Kehagias, L Lahourcade, A Lotsari, E Monroy, GP Dimitrakopulos, ... physica status solidi (b) 247 (7), 1637-1640, 2010 | 16 | 2010 |
| Molecular beam epitaxy of semipolar AlN () and GaN () on m-sapphire L Lahourcade, E Bellet-Amalric, E Monroy, MP Chauvat, P Ruterana Journal of Materials Science: Materials in Electronics 19 (8), 805-809, 2008 | 12 | 2008 |
| Correlation of optical, structural, and compositional properties with V-pit distribution in InGaN/GaN multiquantum wells MH Zoellner, GA Chahine, L Lahourcade, C Mounir, CL Manganelli, ... ACS applied materials & interfaces 11 (25), 22834-22839, 2019 | 11 | 2019 |
| InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy M Malinverni, JM Lamy, D Martin, L Lahourcade, E Feltin, J Dorsaz, ... Applied Physics Express 8 (2), 022105, 2015 | 10 | 2015 |
| High‐surface‐quality nanocrystalline InN layers deposited on GaN templates by RF sputtering S Valdueza‐Felip, FB Naranjo, M González‐Herráez, L Lahourcade, ... physica status solidi (a) 208 (1), 65-69, 2011 | 10 | 2011 |
Sirona Valdueza - FelipAssociate Professor at University of AlcaláVerified email at uah.es
