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Arnout Beckers
Arnout Beckers
imec
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Theoretical limit of low temperature subthreshold swing in field-effect transistors
A Beckers, F Jazaeri, C Enz
IEEE Electron Device Letters 41 (2), 276-279, 2019
154*2019
Cryogenic MOS transistor model
A Beckers, F Jazaeri, C Enz
IEEE Transactions on Electron Devices 65 (9), 3617-3625, 2018
1532018
Characterization and modeling of 28-nm bulk CMOS technology down to 4.2 K
A Beckers, F Jazaeri, C Enz
IEEE Journal of the Electron Devices Society 6, 1007-1018, 2018
1532018
A review on quantum computing: From qubits to front-end electronics and cryogenic MOSFET physics
F Jazaeri, A Beckers, A Tajalli, JM Sallese
2019 MIXDES-26th International Conference" Mixed Design of Integrated …, 2019
1102019
Characterization and modeling of 28-nm FDSOI CMOS technology down to cryogenic temperatures
A Beckers, F Jazaeri, H Bohuslavskyi, L Hutin, S De Franceschi, C Enz
Solid-State Electronics 159, 106-115, 2019
962019
Cryogenic characterization of 28 nm bulk CMOS technology for quantum computing
A Beckers, F Jazaeri, A Ruffino, C Bruschini, A Baschirotto, C Enz
2017 47th European Solid-State Device Research Conference (ESSDERC), 62-65, 2017
902017
Physical model of low-temperature to cryogenic threshold voltage in MOSFETs
A Beckers, F Jazaeri, A Grill, S Narasimhamoorthy, B Parvais, C Enz
IEEE Journal of the Electron Devices Society 8, 780-788, 2020
732020
Cryogenic MOSFET threshold voltage model
A Beckers, F Jazaeri, C Enz
ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019
542019
Design-oriented modeling of 28 nm FDSOI CMOS technology down to 4.2 K for quantum computing
A Beckers, F Jazaeri, H Bohuslavskyi, L Hutin, S De Franceschi, C Enz
2018 Joint International EUROSOI Workshop and International Conference on …, 2018
452018
Inflection phenomenon in cryogenic MOSFET behavior
A Beckers, F Jazaeri, C Enz
IEEE Transactions on Electron Devices 67 (3), 1357-1360, 2020
302020
Cryo-CMOS compact modeling
C Enz, A Beckers, F Jazaeri
2020 IEEE International Electron Devices Meeting (IEDM), 25.3. 1-25.3. 4, 2020
282020
Understanding the excess 1/f noise in MOSFETs at cryogenic temperatures
R Asanovski, A Grill, J Franco, P Palestri, A Beckers, B Kaczer, L Selmi
IEEE Transactions on Electron Devices 70 (4), 2135-2141, 2023
132023
Generalized Boltzmann relations in semiconductors including band tails
A Beckers, D Beckers, F Jazaeri, B Parvais, C Enz
Journal of Applied Physics 129 (4), 2021
112021
A review on quantum computing: From qubits to front-end electronics and cryogenic MOSFET physics. In 2019 MIXDES-26th international conference mixed design of integrated …
F Jazaeri, A Beckers, A Tajalli, JM Sallese
IEEE. https://doi. org/10.23919/MIXDES, 2019
112019
Cryo-computing for infrastructure applications: A technology-to-microarchitecture co-optimization study
D Prasad, M Vangala, M Bhargava, A Beckers, A Grill, D Tierno, ...
2022 International Electron Devices Meeting (IEDM), 23.5. 1-23.5. 4, 2022
92022
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications
R Asanovski, A Grill, J Franco, P Palestri, A Beckers, B Kaczer, L Selmi
2022 International Electron Devices Meeting (IEDM), 30.5. 1-30.5. 4, 2022
72022
Cryogenic MOSFET modeling for large-scale quantum computing
ALM Beckers
EPFL, 2021
72021
Energy filtering in silicon nanowires and nanosheets using a geometric superlattice and its use for steep-slope transistors
A Beckers, M Thewissen, B Sorée
Journal of Applied Physics 124 (14), 2018
72018
28-nm Bulk and FDSOI Cryogenic MOSFET
A Beckers, F Jazaeri, C Enz
2018 IEEE International Conference on Integrated Circuits, Technologies and …, 2018
52018
Temperature dependent mismatch and variability in a cryo-CMOS array with 30k transistors
A Grill, V John, J Michl, A Beckers, E Bury, S Tyaginov, B Parvais, ...
2022 IEEE International Reliability Physics Symposium (IRPS), 10A. 1-1-10A. 1-6, 2022
42022
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