| Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy M Balaji, A Claudel, V Fellmann, I Gélard, E Blanquet, R Boichot, A Pierret, ... Journal of Alloys and Compounds 526, 103-109, 2012 | 46 | 2012 |
| Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD A Claudel, E Blanquet, D Chaussende, M Audier, D Pique, M Pons Journal of Crystal Growth 311 (13), 3371-3379, 2009 | 44 | 2009 |
| Epitaxial and polycrystalline growth of AlN by high temperature CVD: Experimental results and simulation R Boichot, A Claudel, N Baccar, A Milet, E Blanquet, M Pons Surface and coatings technology 205 (5), 1294-1301, 2010 | 41 | 2010 |
| Role of the chemical composition and structure on the electrical properties of a solid state electrolyte: Case of a highly conductive LiPON L Le Van-Jodin, A Claudel, C Secouard, F Sabary, JP Barnes, S Martin Electrochimica Acta 259, 742-751, 2018 | 40 | 2018 |
| High temperature chemical vapor deposition of aluminum nitride, growth and evaluation M Pons, R Boichot, N Coudurier, A Claudel, E Blanquet, S Lay, F Mercier, ... Surface and Coatings Technology 230, 111-118, 2013 | 36 | 2013 |
| Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy A Claudel, V Fellmann, I Gélard, N Coudurier, D Sauvage, M Balaji, ... Thin Solid Films 573, 140-147, 2014 | 32 | 2014 |
| Epitaxial growth of AlN on c-plane sapphire by High Temperature Hydride Vapor Phase Epitaxy: Influence of the gas phase N/Al ratio and low temperature protective layer R Boichot, N Coudurier, F Mercier, S Lay, A Crisci, S Coindeau, A Claudel, ... Surface and Coatings Technology 237, 118-125, 2013 | 26 | 2013 |
| Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process A Claudel, E Blanquet, D Chaussende, R Boichot, B Doisneau, ... Journal of crystal growth 335 (1), 17-24, 2011 | 23 | 2011 |
| Aluminum nitride homoepitaxial growth on polar and non‐polar AlN PVT substrates by high temperature CVD (HTCVD) A Claudel, Y Chowanek, E Blanquet, D Chaussende, R Boichot, A Crisci, ... physica status solidi c 8 (7‐8), 2019-2021, 2011 | 21 | 2011 |
| CFD modeling of the high-temperature HVPE growth of aluminum nitride layers on c-plane sapphire: from theoretical chemistry to process evaluation R Boichot, N Coudurier, F Mercier, A Claudel, N Baccar, A Milet, ... Theoretical Chemistry Accounts 133, 1-13, 2014 | 17 | 2014 |
| Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy N Coudurier, R Boichot, V Fellmann, A Claudel, E Blanquet, A Crisci, ... physica status solidi c 10 (3), 362-365, 2013 | 12 | 2013 |
| Growth and characterization of thick polycrystalline AlN layers by HTCVD A Claudel, E Blanquet, D Chaussende, R Boichot, R Martin, H Mank, ... Journal of The Electrochemical Society 158 (3), H328, 2011 | 9 | 2011 |
| Solid electrolyte for a microbattery L Le Van-Jodin, A Claudel, S Martin, C Secouard US Patent 9,991,555, 2018 | 7 | 2018 |
| A multifunctional hybrid graphene and microfluidic platform to interface topological neuron networks V Dupuit, O Terral, G Bres, A Claudel, B Fernandez, A Briançon‐Marjollet, ... Advanced Functional Materials 32 (49), 2207001, 2022 | 5 | 2022 |
| Fabrication of a 4.4 GHz oscillator using SAW excited on epitaxial AlN grown on a Sapphire substrate R Salut, G Martin, W Daniau, A Claudel, D Pique, S Ballandras 2013 IEEE International Ultrasonics Symposium (IUS), 267-270, 2013 | 5 | 2013 |
| High temperature chemical vapor deposition of AlN/W1− xRex coatings on bulk SiC FZ Roki, M Pons, F Mercier, R Boichot, C Bernard, E Blanquet, M Morais, ... Surface and Coatings Technology 205 (5), 1302-1306, 2010 | 4 | 2010 |
| Elaboration et caractérisation de couches de nitrure d'aluminium AlN par CVD haute température en chimie chlorée A Claudel Institut National Polytechnique de Grenoble-INPG, 2009 | 4 | 2009 |
| High-speed growth and characterization of polycrystalline AlN layers by high temperature chemical vapor deposition (HTCVD) A Claudel, E Blanquet, D Chaussende, R Martin, D Pique, M Pons ECS Transactions 25 (8), 323, 2009 | 4 | 2009 |
| Influence of total pressure and precursors flow rates on the growth of aluminium nitride by high temperature chemical vapor deposition (HTCVD) A Claudel, E Blanquet, D Chaussende, D Pique, M Pons physica status solidi c 6 (S2 2), S348-S351, 2009 | 4 | 2009 |
| Growth of thick AlN layers by high temperature CVD (HTCVD) A Claudel, E Blanquet, D Chaussende, M Audier, D Pique, M Pons Materials Science Forum 600, 1269-1272, 2009 | 4 | 2009 |
