Radiation and photochemistry of onium salt acid generators in chemically amplified resists S Tagawa, S Nagahara, T Iwamoto, M Wakita, T Kozawa, Y Yamamoto, ...
Advances in resist technology and processing XVII 3999, 204-213, 2000
171 2000 Radiation-induced reactions of chemically amplified x-ray and electron-beam resists based on deprotection of T Kozawa, S Nagahara, Y Yoshida, S Tagawa, T Watanabe, Y Yamashita
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1997
117 1997 Pattern scaling with directed self assembly through lithography and etch process integration B Rathsack, M Somervell, J Hooge, M Muramatsu, K Tanouchi, T Kitano, ...
Alternative Lithographic Technologies IV 8323, 52-65, 2012
77 2012 Contact hole shrink process using graphoepitaxial directed self-assembly lithography Y Seino, H Yonemitsu, H Sato, M Kanno, H Kato, K Kobayashi, ...
Journal of Micro/Nanolithography, MEMS, and MOEMS 12 (3), 033011-033011, 2013
52 2013 Contact hole shrink process using directed self-assembly Y Seino, H Yonemitsu, H Sato, M Kanno, H Kato, K Kobayashi, ...
Alternative Lithographic Technologies IV 8323, 185-191, 2012
45 2012 Advances in directed self assembly integration and manufacturability at 300 mm B Rathsack, M Somervell, M Muramatsu, K Tanouchi, T Kitano, ...
Advances in Resist Materials and Processing Technology XXX 8682, 132-142, 2013
37 2013 A manufacturable copper/low-k SiOC/SiCN process technology for 90 nm-node high performance eDRAM K Higashi, N Nakamura, H Miyajima, S Satoh, A Kojima, J Abe, ...
Proceedings of the IEEE 2002 International Interconnect Technology …, 2002
33 2002 Sensitivity enhancement of chemically amplified resists and performance study using extreme ultraviolet interference lithography E Buitrago, S Nagahara, O Yildirim, H Nakagawa, S Tagawa, ...
Journal of Micro/Nanolithography, MEMS, and MOEMS 15 (3), 033502-033502, 2016
32 2016 High-volume manufacturing equipment and processing for directed self-assembly applications M Somervell, T Yamauchi, S Okada, T Tomita, T Nishi, E Iijima, T Nakano, ...
Advances in Patterning Materials and Processes XXXI 9051, 125-135, 2014
32 2014 Novel high sensitivity EUV photoresist for sub-7 nm node T Nagai, H Nakagawa, T Naruoka, S Dei, S Tagawa, A Oshima, ...
Journal of Photopolymer Science and Technology 29 (3), 475-478, 2016
31 2016 Long-lived electron spins in InxGa1− xN multiquantum well S Nagahara, M Arita, Y Arakawa
Applied Physics Letters 86 (24), 2005
30 2005 Chemical amplification type photoresist composition, method for producing a semiconductor device using the composition, and semiconductor substrate S Nagahara, T Sakurada, T Yoshihara
US Patent 6,800,551, 2004
30 2004 Semiconductor device and method of manufacturing the same S Nagahara, K Shiba, N Hamanaka, T Usami, T Yokoyama
US Patent App. 10/303,715, 2003
29 2003 Methods to improve radiation sensitivity of chemically amplified resists by using chain reactions of acid generation S Nagahara, Y Sakurai, M Wakita, Y Yamamoto, S Tagawa, M Komuro, ...
Advances in Resist Technology and Processing XVII 3999, 386-394, 2000
29 2000 Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting S Nagahara, S Tagawa, A Oshima
US Patent 10,025,187, 2018
27 2018 Challenge toward breakage of RLS trade-off for EUV lithography by Photosensitized Chemically Amplified Resist (PSCAR) with flood exposure S Nagahara, M Carcasi, H Nakagawa, E Buitrago, O Yildirim, G Shiraishi, ...
Extreme Ultraviolet (EUV) Lithography VII 9776, 40-57, 2016
27 2016 Chemically amplified resist composition, process for manufacturing semiconductor device and patterning process S Nagahara, M Hiroi
US Patent 7,479,361, 2009
26 2009 Understanding quencher mechanisms by considering photoacid-dissociation equilibrium in chemically amplified resists S Nagahara, L Yuan, WJ Poppe, A Neureuther, Y Kono, A Sekiguchi, ...
Advances in Resist Technology and Processing XXII 5753, 338-349, 2005
26 2005 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition S Nagahara, S Watanabe, K Maeda
US Patent 7,396,633, 2008
25 2008 SMO for 28-nm logic device and beyond: impact of source and mask complexity on lithography performance S Nagahara, K Yoshimochi, H Yamazaki, K Takeda, T Uchiyama, S Hsu, ...
Optical Microlithography XXIII 7640, 561-572, 2010
24 2010 
