| Basic mechanisms and modeling of single-event upset in digital microelectronics PE Dodd, LW Massengill IEEE Transactions on nuclear Science 50 (3), 583-602, 2003 | 1507 | 2003 |
| Charge collection and charge sharing in a 130 nm CMOS technology OA Amusan, AF Witulski, LW Massengill, BL Bhuva, PR Fleming, ML Alles, ... IEEE Transactions on nuclear science 53 (6), 3253-3258, 2006 | 494 | 2006 |
| Single event transients in digital CMOS—A review V Ferlet-Cavrois, LW Massengill, P Gouker IEEE Transactions on Nuclear Science 60 (3), 1767-1790, 2013 | 455 | 2013 |
| Monte Carlo simulation of single event effects RA Weller, MH Mendenhall, RA Reed, RD Schrimpf, KM Warren, ... IEEE Transactions on Nuclear Science 57 (4), 1726-1746, 2010 | 299 | 2010 |
| Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies B Narasimham, BL Bhuva, RD Schrimpf, LW Massengill, MJ Gadlage, ... IEEE Transactions on Nuclear Science 54 (6), 2506-2511, 2007 | 232 | 2007 |
| Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design BD Olson, DR Ball, KM Warren, LW Massengill, NF Haddad, SE Doyle, ... IEEE transactions on nuclear science 52 (6), 2132-2136, 2006 | 211 | 2006 |
| The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM KM Warren, RA Weller, MH Mendenhall, RA Reed, DR Ball, CL Howe, ... IEEE transactions on nuclear science 52 (6), 2125-2131, 2005 | 203 | 2005 |
| A bias-dependent single-event compact model implemented into BSIM4 and a 90 nm CMOS process design kit JS Kauppila, AL Sternberg, ML Alles, AM Francis, J Holmes, OA Amusan, ... IEEE Transactions on nuclear Science 56 (6), 3152-3157, 2009 | 202 | 2009 |
| Single-event transient pulse quenching in advanced CMOS logic circuits JR Ahlbin, LW Massengill, BL Bhuva, B Narasimham, MJ Gadlage, ... IEEE Transactions on Nuclear Science 56 (6), 3050-3056, 2009 | 202 | 2009 |
| Impact of scaling on soft-error rates in commercial microprocessors N Seifert, X Zhu, LW Massengill IEEE Transactions on Nuclear Science 49 (6), 3100-3106, 2002 | 202 | 2002 |
| Comparison of combinational and sequential error rates for a deep submicron process NN Mahatme, S Jagannathan, TD Loveless, LW Massengill, BL Bhuva, ... IEEE Transactions on Nuclear Science 58 (6), 2719-2725, 2011 | 187 | 2011 |
| RHBD techniques for mitigating effects of single-event hits using guard-gates A Balasubramanian, BL Bhuva, JD Black, LW Massengill IEEE Transactions on Nuclear Science 52 (6), 2531-2535, 2006 | 183 | 2006 |
| SEU modeling and prediction techniques LW Massengill IEEE NSREC Short Course 3, 1-93, 1993 | 181 | 1993 |
| Models and algorithmic limits for an ECC-based approach to hardening sub-100-nm SRAMs MA Bajura, Y Boulghassoul, R Naseer, S DasGupta, AF Witulski, ... IEEE Transactions on Nuclear Science 54 (4), 935-945, 2007 | 179 | 2007 |
| Neutron-and proton-induced single event upsets for D-and DICE-flip/flop designs at a 40 nm technology node TD Loveless, S Jagannathan, T Reece, J Chetia, BL Bhuva, MW McCurdy, ... IEEE Transactions on Nuclear Science 58 (3), 1008-1014, 2011 | 177 | 2011 |
| On-chip characterization of single-event transient pulsewidths B Narasimham, V Ramachandran, BL Bhuva, RD Schrimpf, AF Witulski, ... IEEE Transactions on Device and Materials Reliability 6 (4), 542-549, 2006 | 172 | 2006 |
| Single event upsets in deep-submicrometer technologies due to charge sharing OA Amusan, LW Massengill, MP Baze, AL Sternberg, AF Witulski, ... IEEE Transactions on Device and Materials Reliability 8 (3), 582-589, 2008 | 147 | 2008 |
| A hardened-by-design technique for RF digital phase-locked loops TD Loveless, LW Massengill, BL Bhuva, WT Holman, AF Witulski, ... IEEE transactions on nuclear science 53 (6), 3432-3438, 2006 | 144 | 2006 |
| Impact of ion energy and species on single event effects analysis RA Reed, RA Weller, MH Mendenhall, JM Lauenstein, KM Warren, ... IEEE Transactions on Nuclear Science 54 (6), 2312-2321, 2007 | 143 | 2007 |
| Three-dimensional mapping of single-event effects using two photon absorption D McMorrow, WT Lotshaw, JS Melinger, S Buchner, Y Boulghassoul, ... IEEE Transactions on Nuclear Science 50 (6), 2199-2207, 2003 | 139 | 2003 |
