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Amin Rassekh
Amin Rassekh
PhD, University of Tehran-EPFL
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Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect
A Rassekh, JM Sallese, F Jazaeri, M Fathipour, AM Ionescu
IEEE Journal of the Electron Devices Society 8, 939-947, 2020
342020
A single-gate SOI nanosheet junctionless transistor at 10-nm gate length: design guidelines and comparison with the conventional SOI FinFET
A Rassekh, M Fathipour
Journal of Computational Electronics 19 (2), 631-639, 2020
202020
Modeling interface charge traps in junctionless FETs, including temperature effects
A Rassekh, F Jazaeri, M Fathipour, JM Sallese
IEEE Transactions on Electron Devices 66 (11), 4653-4659, 2019
172019
Nonhysteretic condition in negative capacitance junctionless FETs
A Rassekh, F Jazaeri, JM Sallese
IEEE Transactions on Electron Devices 69 (2), 820-826, 2021
152021
An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction
S Kamaei, A Saeidi, F Jazaeri, A Rassekh, N Oliva, M Cavalieri, ...
IEEE Electron Device Letters 41 (4), 645-648, 2020
122020
Design space of negative capacitance in FETs
A Rassekh, F Jazaeri, JM Sallese
IEEE Transactions on Nanotechnology 21, 236-243, 2022
82022
Tunneling Current Through a Double Quantum Dots System
A Rassekh, M Shalchian, JM Sallese, F Jazaeri
Ieee Access 10, 75245-75256, 2022
42022
Design space of quantum dot spin qubits
A Rassekh, M Shalchian, JM Sallese, F Jazaeri
Physica B: Condensed Matter 666, 415133, 2023
12023
Communication at the speed of light (CaSoL): A new paradigm for designing global wires
R Sarvari, A Rassekh, S Shahhosseini
IEEE Transactions on Electron Devices 66 (8), 3466-3472, 2019
12019
Communication at the speed of light over an on-chip interconnect
A Rassekh, R Sarvari, S Shahhosseini
US Patent 10,839,120, 2020
2020
Modeling the Impact of Interface Charge Traps in Double-Gate Junctionless FETs, Including Temperature Effects
A Rassekh, F Jazaeri, M Fathipour, JM Sallese
arXiv preprint arXiv:1907.08429, 2019
2019
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