| Fabrication of non-polar GaN based highly responsive and fast UV photodetector A Gundimeda, S Krishna, N Aggarwal, A Sharma, ND Sharma, KK Maurya, ... Applied Physics Letters 110 (10), 2017 | 224 | 2017 |
| A highly responsive self‐driven UV photodetector using GaN nanoflowers N Aggarwal, S Krishna, A Sharma, L Goswami, D Kumar, S Husale, ... Advanced electronic materials 3 (5), 1700036, 2017 | 101 | 2017 |
| Pit assisted oxygen chemisorption on GaN surfaces M Mishra, SK TC, N Aggarwal, M Kaur, S Singh, G Gupta Physical Chemistry Chemical Physics 17 (23), 15201-15208, 2015 | 74 | 2015 |
| Extenuation of stress and defects in GaN films grown on a metal–organic chemical vapor deposition-GaN/c-sapphire substrate by plasma-assisted molecular beam epitaxy N Aggarwal, STC Krishna, L Goswami, M Mishra, G Gupta, KK Maurya, ... Crystal Growth & Design 15 (5), 2144-2150, 2015 | 65 | 2015 |
| Surface chemistry and electronic structure of nonpolar and polar GaN films M Mishra, TCS Krishna, N Aggarwal, G Gupta Applied Surface Science 345, 440-447, 2015 | 62 | 2015 |
| GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity SK Jain, N Aggarwal, S Krishna, R Kumar, S Husale, V Gupta, G Gupta Journal of Materials Science: Materials in Electronics 29, 8958-8963, 2018 | 61 | 2018 |
| Au-nanoplasmonics-mediated surface plasmon-enhanced GaN nanostructured UV photodetectors L Goswami, N Aggarwal, S Krishna, M Singh, P Vashishtha, SP Singh, ... ACS omega 5 (24), 14535-14542, 2020 | 60 | 2020 |
| Ultrafast photoresponse and enhanced photoresponsivity of indium nitride based broad band photodetector S Krishna, A Sharma, N Aggarwal, S Husale, G Gupta Solar Energy Materials and Solar Cells 172, 376-383, 2017 | 50 | 2017 |
| Surface-engineered nanostructure-based efficient nonpolar GaN ultraviolet photodetectors M Mishra, A Gundimeda, S Krishna, N Aggarwal, L Goswami, B Gahtori, ... ACS omega 3 (2), 2304-2311, 2018 | 45 | 2018 |
| Effect of metal contacts on a GaN/sapphire-based MSM ultraviolet photodetector SK Jain, S Krishna, N Aggarwal, R Kumar, A Gundimeda, SC Husale, ... Journal of Electronic Materials 47, 6086-6090, 2018 | 38 | 2018 |
| Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on (112 [combining macron] 0) sapphire grown by rf-molecular beam epitaxy TCS Krishna, N Aggarwal, GA Reddy, P Dugar, M Mishra, L Goswami, ... Rsc Advances 5 (89), 73261-73267, 2015 | 37 | 2015 |
| Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE S Krishna, N Aggarwal, M Mishra, KK Maurya, S Singh, N Dilawar, ... Physical Chemistry Chemical Physics 18 (11), 8005-8014, 2016 | 36 | 2016 |
| Ultrasensitive Flexible κ-Phase Ga2O3 Solar-Blind Photodetector Y Lu, S Krishna, X Tang, W Babatain, M Ben Hassine, CH Liao, N Xiao, ... ACS Applied Materials & Interfaces 14 (30), 34844-34854, 2022 | 29 | 2022 |
| Correlation of donor-acceptor pair emission on the performance of GaN-based UV photodetector S Krishna, N Aggarwal, A Gundimeda, A Sharma, S Husale, KK Maurya, ... Materials Science in Semiconductor Processing 98, 59-64, 2019 | 29 | 2019 |
| Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films M Mishra, A Gundimeda, S Krishna, N Aggarwal, B Gahtori, N Dilawar, ... Physical Chemistry Chemical Physics 19 (13), 8787-8801, 2017 | 28 | 2017 |
| Influence of metallic surface states on electron affinity of epitaxial AlN films M Mishra, S Krishna, N Aggarwal, G Gupta Applied Surface Science 407, 255-259, 2017 | 27 | 2017 |
| Facile synthesis and photoluminescence spectroscopy of 3D-triangular GaN nano prism islands M Kumar, SK Pasha, TCS Krishna, AP Singh, P Kumar, BK Gupta, ... Dalton Transactions 43 (31), 11855-11861, 2014 | 26 | 2014 |
| Heterogeneous sonocatalytic activation of peroxomonosulphate in the presence of CoFe2O4/TiO2 nanocatalysts for the degradation of Acid Blue 113 in an aqueous environment S Krishna, P Sathishkumar, N Pugazhenthiran, K Guesh, RV Mangalaraja, ... Journal of Environmental Chemical Engineering 8 (5), 104024, 2020 | 22 | 2020 |
| Epitaxial growth of high In-content In0. 41Ga0. 59N/GaN heterostructure on (11–20) Al2O3 substrate S Krishna, N Aggarwal, M Mishra, KK Maurya, M Kaur, G Sehgal, S Singh, ... Journal of Alloys and Compounds 658, 470-475, 2016 | 20 | 2016 |
| Impact on photon-assisted charge carrier transport by engineering electrodes of GaN based UV photodetectors N Aggarwal, S Krishna, SK Jain, A Arora, L Goswami, A Sharma, ... Journal of Alloys and Compounds 785, 883-890, 2019 | 19 | 2019 |
Neha AggarwalPostdoctoral Fellow, Paul-Drude-Institut für FestkörperelektronikVerified email at pdi-berlin.de
