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Farzan Jazaeri
Farzan Jazaeri
Research Scientist, EPFL
Dirección de correo verificada de epfl.ch - Página principal
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The forward physics facility at the high-luminosity LHC
JL Feng, F Kling, MH Reno, J Rojo, D Soldin, LA Anchordoqui, J Boyd, ...
Journal of Physics G: Nuclear and Particle Physics 50 (3), 030501, 2023
1932023
Cryogenic MOS transistor model
A Beckers, F Jazaeri, C Enz
IEEE Transactions on Electron Devices 65 (9), 3617-3625, 2018
1512018
Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime
F Jazaeri, L Barbut, A Koukab, JM Sallese
Solid-State Electronics 82, 103-110, 2013
1502013
Characterization and modeling of 28-nm bulk CMOS technology down to 4.2 K
A Beckers, F Jazaeri, C Enz
IEEE Journal of the Electron Devices Society 6, 1007-1018, 2018
1472018
Theoretical limit of low temperature subthreshold swing in field-effect transistors
A Beckers, F Jazaeri, C Enz
IEEE Electron Device Letters 41 (2), 276-279, 2019
1382019
A review on quantum computing: From qubits to front-end electronics and cryogenic MOSFET physics
F Jazaeri, A Beckers, A Tajalli, JM Sallese
2019 MIXDES-26th International Conference" Mixed Design of Integrated …, 2019
1072019
Double-gate negative-capacitance MOSFET with PZT gate-stack on ultra thin body SOI: An experimentally calibrated simulation study of device performance
A Saeidi, F Jazaeri, I Stolichnov, AM Ionescu
IEEE Transactions on Electron Devices 63 (12), 4678-4684, 2016
982016
Constructing built‐in electric field in heterogeneous nanowire arrays for efficient overall water electrolysis
S Zhang, C Tan, R Yan, X Zou, FL Hu, Y Mi, C Yan, S Zhao
Angewandte Chemie 135 (26), e202302795, 2023
942023
Characterization and modeling of 28-nm FDSOI CMOS technology down to cryogenic temperatures
A Beckers, F Jazaeri, H Bohuslavskyi, L Hutin, S De Franceschi, C Enz
Solid-State Electronics 159, 106-115, 2019
942019
Cryogenic characterization of 28 nm bulk CMOS technology for quantum computing
A Beckers, F Jazaeri, A Ruffino, C Bruschini, A Baschirotto, C Enz
2017 47th European Solid-State Device Research Conference (ESSDERC), 62-65, 2017
902017
Negative capacitance as performance booster for tunnel FETs and MOSFETs: an experimental study
A Saeidi, F Jazaeri, F Bellando, I Stolichnov, GV Luong, QT Zhao, S Mantl, ...
IEEE electron device letters 38 (10), 1485-1488, 2017
752017
Physical model of low-temperature to cryogenic threshold voltage in MOSFETs
A Beckers, F Jazaeri, A Grill, S Narasimhamoorthy, B Parvais, C Enz
IEEE Journal of the Electron Devices Society 8, 780-788, 2020
692020
Modeling nanowire and double-gate junctionless field-effect transistors
F Jazaeri, JM Sallese
Cambridge University Press, 2018
582018
Cryogenic MOSFET threshold voltage model
A Beckers, F Jazaeri, C Enz
ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019
532019
A common core model for junctionless nanowires and symmetric double-gate FETs
JM Sallese, F Jazaeri, L Barbut, N Chevillon, C Lallement
IEEE transactions on electron devices 60 (12), 4277-4280, 2013
532013
Modeling and design space of junctionless symmetric DG MOSFETs with long channel
F Jazaeri, L Barbut, JM Sallese
IEEE transactions on electron devices 60 (7), 2120-2127, 2013
532013
Characterization of gigarad total ionizing dose and annealing effects on 28-nm bulk MOSFETs
CM Zhang, F Jazaeri, A Pezzotta, C Bruschini, G Borghello, F Faccio, ...
IEEE Transactions on Nuclear Science 64 (10), 2639-2647, 2017
522017
Performance and luminosity models for heavy-ion operation at the CERN Large Hadron Collider
R Bruce, MA Jebramcik, JM Jowett, T Mertens, M Schaumann
The European Physical Journal Plus 136 (7), 745, 2021
462021
Design-oriented modeling of 28 nm FDSOI CMOS technology down to 4.2 K for quantum computing
A Beckers, F Jazaeri, H Bohuslavskyi, L Hutin, S De Franceschi, C Enz
2018 Joint International EUROSOI Workshop and International Conference on …, 2018
442018
Charge-based EPFL HEMT model
F Jazaeri, JM Sallese
IEEE Transactions on Electron Devices 66 (3), 1218-1229, 2019
402019
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Artículos 1–20