Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces C Zhou, S Zhang, Z Lv, Z Ma, C Yu, Z Feng, M Chan
npj 2D Materials and Applications 4 (1), 46, 2020
63 2020 Low‐power complementary inverter with negative capacitance 2D semiconductor transistors J Wang, X Guo, Z Yu, Z Ma, Y Liu, Z Lin, M Chan, Y Zhu, X Wang, Y Chai
Advanced Functional Materials 30 (46), 2003859, 2020
62 2020 Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope J Wang, L Cai, J Chen, X Guo, Y Liu, Z Ma, Z Xie, H Huang, M Chan, ...
Science Advances 7 (44), eabf8744, 2021
39 2021 Steep Slope p-type 2D WSe2 Field-Effect Transistors with Van Der Waals Contact and Negative Capacitance J Wang, X Guo, Z Yu, Z Ma, Y Liu, M Chan, Y Zhu, X Wang, Y Chai
2018 IEEE International Electron Devices Meeting (IEDM), 22.3. 1-22.3. 4, 2018
28 2018 Control of hexagonal boron nitride dielectric thickness by single layer etching Z Ma, C Prawoto, Z Ahmed, Y Xiao, L Zhang, C Zhou, M Chan
Journal of Materials Chemistry C 7 (21), 6273-6278, 2019
16 2019 Analytical Monolayer MoS2 MOSFET Modeling Verified by First Principle Simulations Z Ahmed, Q Shi, Z Ma, L Zhang, H Guo, M Chan
IEEE Electron Device Letters 41 (1), 171-174, 2019
13 2019 Low temperature synthesis of high-density carbon nanotubes on insulating substrate Y Xiao, Z Ahmed, Z Ma, C Zhou, L Zhang, M Chan
Nanomaterials 9 (3), 473, 2019
11 2019 Robust Lead‐Free Perovskite Nanowire Array‐Based Artificial Synapses Exemplifying Gestalt Principle of Closure via a Letter Recognition Scheme S Poddar, Z Chen, Z Ma, Y Zhang, CLJ Chan, B Ren, Q Zhang, D Zhang, ...
Advanced Intelligent Systems 4 (7), 2200065, 2022
8 2022 High Current Nb-Doped P-Channel MoS₂ Field-Effect Transistor Using Pt Contact Z Ma, L Zhang, C Zhou, M Chan
IEEE Electron Device Letters 42 (3), 343-346, 2021
8 2021 Ultralow- Y Xiao, Z Ma, C Prawoto, C Zhou, M Chan
IEEE Transactions on Electron Devices 67 (5), 2071-2075, 2020
8 2020 Interconnect technology with h-BN-capped air-gaps C Prawoto, Z Ma, Y Xiao, S Raju, C Zhou, M Chan
IEEE Electron Device Letters 40 (11), 1876-1879, 2019
8 2019 Synthesis of vertical carbon nanotube interconnect structures using CMOS-compatible catalysts Z Ma, S Zhou, C Zhou, Y Xiao, S Li, M Chan
Nanomaterials 10 (10), 1918, 2020
7 2020 Complementary Two-Dimensional (2-D) FET Technology With MoS2 /hBN/Graphene Stack CJ Estrada, Z Ma, M Chan
IEEE Electron Device Letters 42 (12), 1890-1893, 2021
6 2021 A vertically aligned multiwall carbon nanotube-based humidity sensor with fast response, low hysteresis, and high repeatability X Wang, Y Deng, X Chen, Z Ma, Y Wang, W Xu, H Yu
IEEE Sensors Letters 5 (11), 1-4, 2021
6 2021 Air-gap technology with a large void-fraction for global interconnect delay reduction C Prawoto, Z Ma, Y Xiao, S Raju, M Chan
IEEE Transactions on Electron Devices 68 (10), 5078-5084, 2021
6 2021 Image processing with a multi-level ultra-fast three dimensionally integrated perovskite nanowire array S Poddar, Y Zhang, Z Chen, Z Ma, Y Fu, Y Ding, CLJ Chan, Q Zhang, ...
Nanoscale Horizons 7 (7), 759-769, 2022
5 2022 On‐Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole Current P‐Channel Field‐Effect Transistors Z Ma, CJ Estrada, K Gong, L Zhang, M Chan
Advanced Electronic Materials 8 (10), 2200480, 2022
4 2022 Complementary Two-Dimensional (2-D) MoS2 FET Technology CJ Estrada, Z Ma, M Chan
ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021
2 2021 Vertically aligned carbon nanotubes for fast humidity sensing ZC Ma, XY Wang, LN Zhang
2020 IEEE 15th International Conference on Nano/Micro Engineered and …, 2020
2 2020 Current conduction mechanisms in h-BN as a dielectric material Z Ma, CC Prawoto, S Li, Z Ahmed, L Zhang, M Chan
2018 IEEE International Conference on Electron Devices and Solid State …, 2018
2 2018 
Mansun ChanChair Professor, HKUSTDirección de correo verificada de ust.hk
