Ultimately thin double-gate SOI MOSFETs T Ernst, S Cristoloveanu, G Ghibaudo, T Ouisse, S Horiguchi, Y Ono, ...
IEEE transactions on electron devices 50 (3), 830-838, 2003
300 2003 Silicon single-electron devices Y Takahashi, Y Ono, A Fujiwara, H Inokawa
Journal of physics: Condensed matter 14 (39), R995, 2002
233 2002 Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor A Fujiwara, K Nishiguchi, Y Ono
Applied Physics Letters 92 (4), 2008
220 2008 Valley polarization in Si (100) at zero magnetic field K Takashina, Y Ono, A Fujiwara, Y Takahashi, Y Hirayama
Physical review letters 96 (23), 236801, 2006
178 2006 Pauli-spin-blockade transport through a silicon double quantum dot HW Liu, T Fujisawa, Y Ono, H Inokawa, A Fujiwara, K Takashina, ...
Physical Review B 77 (7), 073310, 2008
172 2008 Manipulation and detection of single electrons for future information processing Y Ono, A Fujiwara, K Nishiguchi, H Inokawa, Y Takahashi
Journal of Applied Physics 97 (3), 2005
165 2005 Fabrication method for IC-oriented Si single-electron transistors Y Ono, Y Takahashi, K Yamazaki, M Nagase, H Namatsu, K Kurihara, ...
IEEE Transactions on Electron Devices 47 (1), 147-153, 2000
151 2000 Conductance modulation by individual acceptors in Si nanoscale field-effect transistors Y Ono, K Nishiguchi, A Fujiwara, H Yamaguchi, H Inokawa, Y Takahashi
Applied Physics Letters 90 (10), 2007
146 2007 Current quantization due to single-electron transfer in Si-wire charge-coupled devices A Fujiwara, NM Zimmerman, Y Ono, Y Takahashi
Applied physics letters 84 (8), 1323-1325, 2004
146 2004 Single-electron transport through single dopants in a dopant-rich environment M Tabe, D Moraru, M Ligowski, M Anwar, R Jablonski, Y Ono, T Mizuno
Physical review letters 105 (1), 016803, 2010
133 2010 Si complementary single-electron inverter with voltage gain Y Ono, Y Takahashi, K Yamazaki, M Nagase, H Namatsu, K Kurihara, ...
Applied Physics Letters 76 (21), 3121-3123, 2000
128 2000 Photoluminescence from a silicon quantum well formed on separation by implanted oxygen substrate Y Takahashi, T Furuta, Y Ono, T Ishiyama, MTM Tabe
Japanese journal of applied physics 34 (2S), 950, 1995
117 1995 Metal− semiconductor transition in single-walled carbon nanotubes induced by low-energy electron irradiation A Vijayaraghavan, K Kanzaki, S Suzuki, Y Kobayashi, H Inokawa, Y Ono, ...
Nano letters 5 (8), 1575-1579, 2005
108 2005 Scanning-tunneling-microscopy observation of thermal oxide growth on Si (111) 7× 7 surfaces Y Ono, M Tabe, H Kageshima
Physical Review B 48 (19), 14291, 1993
106 1993 Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology K Nishiguchi, A Fujiwara, Y Ono, H Inokawa, Y Takahashi
Applied physics letters 88 (18), 2006
88 2006 Electron pump by a combined single-electron/field-effect-transistor structure Y Ono, Y Takahashi
Applied Physics Letters 82 (8), 1221-1223, 2003
87 2003 Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires D Moraru, Y Ono, H Inokawa, M Tabe
Physical Review B 76 (7), 075332, 2007
83 2007 Binary adders of multigate single-electron transistors: Specific design using pass-transistor logic Y Ono, H Inokawa, Y Takahashi
IEEE Transactions on nanotechnology 1 (2), 93-99, 2002
76 2002 Thermal agglomeration of single-crystalline Si layer on buried R Nuryadi, Y Ishikawa, Y Ono, M Tabe
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
74 2002 Thermal agglomeration of thin single crystal Si on SiO2 in vacuum Y Ono, M Nagase, MTM Tabe, YTY Takahashi
Japanese journal of applied physics 34 (4R), 1728, 1995
63 1995 
Akira FujiwaraNTTDirección de correo verificada de lab.ntt.co.jp
