Mechanisms of recombination in GaN photodetectors F Binet, JY Duboz, E Rosencher, F Scholz, V Härle
Applied physics letters 69 (9), 1202-1204, 1996
188 1996 A self‐consistent model for quantum well infrared photodetectors L Thibaudeau, P Bois, JY Duboz
Journal of applied physics 79 (1), 446-454, 1996
171 1996 High-excitation photoluminescence in GaN: Hot-carrier effects and the Mott transition F Binet, JY Duboz, J Off, F Scholz
Physical Review B 60 (7), 4715, 1999
150 1999 GaN as seen by the industry JY Duboz
physica status solidi (a) 176 (1), 5-14, 1999
103 1999 Electronic transport properties of epitaxial erbium silicide/silicon heterostructures JY Duboz, PA Badoz, FA d’Avitaya, JA Chroboczek
Applied physics letters 55 (1), 84-86, 1989
101 1989 Band-gap energy of JY Duboz, JA Gupta, ZR Wasilewski, J Ramsey, RL Williams, GC Aers, ...
Physical Review B 66 (8), 085313, 2002
81 2002 Properties of a photovoltaic detector based on an F Binet, JY Duboz, N Laurent, E Rosencher, O Briot, RL Aulombard
Journal of applied physics 81 (9), 6449-6454, 1997
79 1997 Growth, characterization and electrical properties of epitaxial erbium silicide FA d'Avitaya, PA Badoz, Y Campidelli, JA Chroboczek, JY Duboz, A Perio, ...
Thin Solid Films 184 (1-2), 283-293, 1990
71 1990 Optoelectronic quantum well device having an optical resonant cavity and sustaining inter subband transitions JY Duboz
US Patent 5,818,066, 1998
70 1998 Phase-matched second harmonic generation with on-chip GaN-on-Si microdisks I Roland, M Gromovyi, Y Zeng, M El Kurdi, S Sauvage, C Brimont, ...
Scientific reports 6 (1), 34191, 2016
67 2016 Evidence for Fermi-energy pinning relative to either valence or conduction band in Schottky barriers JY Duboz, PA Badoz, FA d’Avitaya, E Rosencher
Physical Review B 40 (15), 10607, 1989
63 1989 Tunnel current in quantum dot infrared photodetectors JY Duboz, HC Liu, ZR Wasilewski, M Byloss, R Dudek
Journal of applied physics 93 (2), 1320-1322, 2003
62 2003 Epitaxial erbium silicide films on Si (111) surface: Fabrication, structure, and electrical properties JY Duboz, PA Badoz, A Perio, JC Oberlin, FA d'Avitaya, Y Campidelli, ...
Applied Surface Science 38 (1-4), 171-177, 1989
62 1989 Electrical transport properties in epitaxial codeposited CoSi2 layers on <111> Si JY Duboz, PA Badoz, E Rosencher, J Henz, M Ospelt, H Von Känel, ...
Applied physics letters 53 (9), 788-790, 1988
54 1988 Electric field effects on excitons in gallium nitride F Binet, JY Duboz, E Rosencher, F Scholz, V Härle
Physical Review B 54 (11), 8116, 1996
52 1996 Submicron metal–semiconductor–metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation JY Duboz, JL Reverchon, D Adam, B Damilano, N Grandjean, F Semond, ...
Journal of applied physics 92 (9), 5602-5604, 2002
51 2002 Intersubband transitions in InGaNAs/GaAs quantum wells JY Duboz, JA Gupta, M Byloss, GC Aers, HC Liu, ZR Wasilewski
Applied physics letters 81 (10), 1836-1838, 2002
50 2002 Influence of surface defects on the characteristics of GaN Schottky diodes JY Duboz, F Binet, N Laurent, E Rosencher, F Scholz, V Harle, O Briot, ...
MRS Online Proceedings Library (OPL) 449, 1085, 1996
49 1996 GaN for x-ray detection JY Duboz, M Laügt, D Schenk, B Beaumont, JL Reverchon, AD Wieck, ...
Applied Physics Letters 92 (26), 2008
47 2008 An etching‐free approach toward large‐scale light‐emitting metasurfaces G Brière, P Ni, S Héron, S Chenot, S Vézian, V Brändli, B Damilano, ...
Advanced Optical Materials 7 (14), 1801271, 2019
46 2019 