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Ken Collins
Ken Collins
Vice President of Engineering and Fellow at Applied Materials
Dirección de correo verificada de amat.com - Página principal
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Inductively coupled pulsed plasmas in the presence of synchronous pulsed substrate bias for robust, reliable, and fine conductor etching
S Banna, A Agarwal, K Tokashiki, H Cho, S Rauf, V Todorow, ...
IEEE Transactions on Plasma Science 37 (9), 1730-1746, 2009
1112009
Self-consistent simulation of very high frequency capacitively coupled plasmas
S Rauf, K Bera, K Collins
Plasma Sources Science and Technology 17 (3), 035003, 2008
902008
Self-consistent simulation of very high frequency capacitively coupled plasmas
S Rauf, K Bera, K Collins
Plasma Sources Science and Technology 17 (3), 035003, 2008
902008
Effect of simultaneous source and bias pulsing in inductively coupled plasma etching
A Agarwal, PJ Stout, S Banna, S Rauf, K Tokashiki, JY Lee, K Collins
Journal of Applied Physics 106 (10), 2009
672009
Self-consistent electrodynamics of large-area high-frequency capacitive plasma discharge
Z Chen, S Rauf, K Collins
Journal of Applied Physics 108 (7), 2010
582010
Effects of interelectrode gap on high frequency and very high frequency capacitively coupled plasmas
K Bera, S Rauf, K Ramaswamy, K Collins
Journal of Vacuum Science & Technology A 27 (4), 706-711, 2009
492009
Control of plasma uniformity in a capacitive discharge using two very high frequency power sources
K Bera, S Rauf, K Ramaswamy, K Collins
Journal of Applied Physics 106 (3), 2009
482009
Synchronous pulse plasma operation upon source and bias radio frequencys for inductively coupled plasma for highly reliable gate etching technology
K Tokashiki, H Cho, S Banna, JY Lee, K Shin, V Todorow, WS Kim, ...
Japanese journal of applied physics 48 (8S1), 08HD01, 2009
412009
Synchronous pulse plasma operation upon source and bias radio frequencys for inductively coupled plasma for highly reliable gate etching technology
K Tokashiki, H Cho, S Banna, JY Lee, K Shin, V Todorow, WS Kim, ...
Japanese journal of applied physics 48 (8S1), 08HD01, 2009
412009
Gas heating mechanisms in capacitively coupled plasmas
A Agarwal, S Rauf, K Collins
Plasma Sources Science and Technology 21 (5), 055012, 2012
402012
Extraction of negative ions from pulsed electronegative capacitively coupled plasmas
A Agarwal, S Rauf, K Collins
Journal of Applied Physics 112 (3), 2012
372012
Effect of resonance in external radio-frequency circuit on very high frequency plasma discharge
S Rauf, Z Chen, K Collins
Journal of Applied Physics 107 (9), 2010
372010
Power dynamics in a low pressure capacitively coupled plasma discharge
S Rauf, K Bera, K Collins
Plasma Sources Science and Technology 19 (1), 015014, 2009
362009
Three-dimensional model of magnetized capacitively coupled plasmas
S Rauf, J Kenney, K Collins
Journal of Applied Physics 105 (10), 2009
322009
Recouping etch rates in pulsed inductively coupled plasmas
A Agarwal, PJ Stout, S Banna, S Rauf, K Collins
Journal of Vacuum Science & Technology A 29 (1), 2011
272011
Influence of inhomogeneous magnetic field on the characteristics of very high frequency capacitively coupled plasmas
K Bera, S Rauf, J Kenney, L Dorf, K Collins
Journal of Applied Physics 107 (5), 2010
242010
Control of plasma uniformity using phase difference in a VHF plasma process chamber
K Bera, S Rauf, K Collins
IEEE transactions on plasma science 36 (4), 1366-1367, 2008
232008
Decreasing high ion energy during transition in pulsed inductively coupled plasmas
A Agarwal, PJ Stout, S Banna, S Rauf, K Collins
Applied Physics Letters 100 (4), 2012
182012
Impact of phase lag on uniformity in pulsed capacitively coupled plasmas
A Agarwal, S Rauf, K Collins
Applied Physics Letters 99 (2), 2011
162011
On the scaling of rf and dc self-bias voltages with pressure in electronegative capacitively coupled plasmas
A Agarwal, L Dorf, S Rauf, K Collins
Journal of Vacuum Science & Technology A 30 (2), 2012
122012
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20