Temperature-Dependent Thermal Properties of Supported MoS2 Monolayers A Taube, J Judek, A Łapińska, M Zdrojek
ACS applied materials & interfaces 7 (9), 5061-5065, 2015
230 2015 Temperature dependence of Raman shifts in layered ReSe2 and SnSe2 semiconductor nanosheets A Taube, A Łapińska, J Judek, M Zdrojek
Applied Physics Letters 107 (1), 2015
121 2015 Temperature-Dependent Nonlinear Phonon Shifts in a Supported MoS2 Monolayer A Taube, J Judek, C Jastrzębski, A Duzynska, K Świtkowski, M Zdrojek
ACS applied materials & interfaces 6 (12), 8959-8963, 2014
92 2014 Temperature evolution of phonon properties in few-layer black phosphorus A Łapińska, A Taube, J Judek, M Zdrojek
The Journal of Physical Chemistry C 120 (9), 5265-5270, 2016
69 2016 Graphene-based plastic absorber for total sub-terahertz radiation shielding M Zdrojek, J Bomba, A Łapińska, A Dużyńska, K Żerańska-Chudek, ...
Nanoscale 10 (28), 13426-13431, 2018
51 2018 Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al A Taube, E Kamińska, M Kozubal, J Kaczmarski, W Wojtasiak, J Jasiński, ...
physica status solidi (a) 212 (5), 1162-1169, 2015
47 2015 AlGaN/GaN high electron mobility transistors on semi-insulating Ammono-GaN substrates with regrown ohmic contacts W Wojtasiak, M Góralczyk, D Gryglewski, M Zając, R Kucharski, ...
Micromachines 9 (11), 546, 2018
40 2018 Temperature-dependent thermal properties of single-walled carbon nanotube thin films A Duzynska, A Taube, KP Korona, J Judek, M Zdrojek
Applied Physics Letters 106 (18), 183108, 2015
40 2015 Electronic Properties of Thin HfO Films Fabricated by Atomic Layer Deposition on 4H-SiC A Taube, S Gierałtowska, T Gutt, T Małachowski, I Pasternak, ...
Acta Physica Polonica A 119 (5), 696-698, 2011
35 2011 Temperature induced phonon behaviour in germanium selenide thin films probed by Raman spectroscopy A Taube, A Łapińska, J Judek, N Wochtman, M Zdrojek
Journal of Physics D: Applied Physics 49 (31), 315301, 2016
33 2016 Raman spectra of high-κ dielectric layers investigated with micro-Raman spectroscopy comparison with silicon dioxide P Borowicz, A Taube, W Rzodkiewicz, M Latek, S Gierałtowska
The Scientific World Journal 2013, 2013
29 2013 Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts A Taube, J Kaczmarski, R Kruszka, J Grochowski, K Kosiel, ...
Solid-State Electronics 111, 12-17, 2015
26 2015 Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices R Mroczyński, A Taube, S Gierałtowska, E Guziewicz, M Godlewski
Applied surface science 258 (21), 8366-8370, 2012
20 2012 Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks A Taube, R Mroczyński, K Korwin-Mikke, S Gierałtowska, J Szmidt, ...
Materials Science and Engineering: B 177 (15), 1281-1285, 2012
19 2012 Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures K Kosiel, K Król, A Taube, M Guziewicz, K Gołaszewska-Malec, R Kruszka, ...
Bulletin of the Polish Academy of Sciences: Technical Sciences, 2016
18 2016 Enhancement of Ru-Si-O/In-Ga-Zn-O MESFET performance by reducing depletion region trap density J Kaczmarski, J Grochowski, E Kaminska, A Taube, M Borysiewicz, ...
IEEE Electron Device Letters, 2015
17 2015 Raman spectroscopy of layered lead tin disulfide (PbSnS2 ) thin films A Łapińska, A Taube, M Wąsik, GZ Żukowska, A Duzynska, J Judek, ...
Journal of Raman Spectroscopy 48 (3), 479-484, 2017
16 2017 Transparent Ru–Si–O/In–Ga–Zn–O MESFETs on flexible polymer substrates J Kaczmarski, A Taube, MA Borysiewicz, M Myśliwiec, K Piskorski, ...
IEEE Transactions on Electron Devices 65 (1), 129-135, 2017
16 2017 In–Ga–Zn–O MESFET with transparent amorphous Ru–Si–O Schottky barrier J Kaczmarski, J Grochowski, E Kaminska, A Taube, W Jung, A Piotrowska
physica status solidi (RRL)–Rapid Research Letters 8 (7), 625-628, 2014
15 2014 Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures A Domanowska, M Miczek, R Ucka, M Matys, B Adamowicz, J Żywicki, ...
Applied surface science 258 (21), 8354-8359, 2012
15 2012