Stranski-Krastanov growth of InAs quantum dots with narrow size distribution KYK Yamaguchi, KYK Yujobo, TKT Kaizu
Japanese journal of applied physics 39 (12A), L1245, 2000
216 2000 Two-step photon up-conversion solar cells S Asahi, H Teranishi, K Kusaki, T Kaizu, T Kita
Nature Communications 8 (1), 14962, 2017
111 2017 Jpn. J. Appl. Phys. T Yamaguchi, K Yujobo, T Kaizu
Jpn. J. Appl. Phys 32 (9B), 4069-4073, 1993
102 1993 Two-step photon absorption in InAs/GaAs quantum-dot superlattice solar cells T Kada, S Asahi, T Kaizu, Y Harada, T Kita, R Tamaki, Y Okada, K Miyano
Physical Review B 91 (20), 201303, 2015
49 2015 Self size-limiting process of InAs quantum dots grown by molecular beam epitaxy TKT Kaizu, KYK Yamaguchi
Japanese Journal of Applied Physics 40 (3S), 1885, 2001
49 2001 Quantum size effects in GaAs nanodisks fabricated using a combination of the bio-template technique and neutral beam etching Y Tamura, T Kaizu, T Kiba, M Igarashi, R Tsukamoto, A Higo, W Hu, ...
Nanotechnology 24 (28), 285301, 2013
42 2013 Suppression of thermal carrier escape and efficient photo-carrier generation by two-step photon absorption in InAs quantum dot intermediate-band solar cells using a dot-in-well … S Asahi, H Teranishi, N Kasamatsu, T Kada, T Kaizu, T Kita
Journal of Applied Physics 116 (6), 2014
37 2014 Uniform formation process of self-organized InAs quantum dots K Yamaguchi, T Kaizu, K Yujobo, Y Saito
Journal of crystal growth 237, 1301-1306, 2002
34 2002 Saturable Two-Step Photocurrent Generation in Intermediate-Band Solar Cells Including InAs Quantum Dots Embedded in Al Ga As/GaAs Quantum Wells S Asahi, H Teranishi, N Kasamatsu, T Kada, T Kaizu, T Kita
IEEE Journal of Photovoltaics 6 (2), 465-472, 2015
33 2015 Broadband control of emission wavelength of InAs/GaAs quantum dots by GaAs capping temperature T Kaizu, T Matsumura, T Kita
Journal of Applied Physics 118 (15), 2015
30 2015 Facet formation of uniform InAs quantum dots by molecular beam epitaxy T Kaizu, K Yamaguchi
Japanese journal of applied physics 42 (6S), 4166, 2003
30 2003 Photoluminescence from GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth T Kaizu, Y Tamura, M Igarashi, W Hu, R Tsukamoto, I Yamashita, ...
Applied Physics Letters 101 (11), 2012
25 2012 In situ monitoring of internal strain and height of InAs nanoislands grown on GaAs (001) M Takahasi, T Kaizu, J Mizuki
Applied physics letters 88 (10), 2006
25 2006 Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots T Kita, M Suwa, T Kaizu, Y Harada
Journal of Applied Physics 115 (23), 2014
22 2014 Efficient two-step photocarrier generation in bias-controlled InAs/GaAs quantum dot superlattice intermediate-band solar cells T Kada, S Asahi, T Kaizu, Y Harada, R Tamaki, Y Okada, T Kita
Scientific Reports 7 (1), 5865, 2017
21 2017 Modification of InAs quantum dot structure during annealing T Kaizu, M Takahasi, K Yamaguchi
Journal of crystal growth 301, 248-251, 2007
17 2007 Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell T Sogabe, T Kaizu, Y Okada, S Tomić
Journal of Renewable and Sustainable Energy 6 (1), 2014
16 2014 Two-step photocurrent generation enhanced by miniband formation in InAs/GaAs quantum dot superlattice intermediate-band solar cells S Watanabe, S Asahi, T Kada, K Hirao, T Kaizu, Y Harada, T Kita
Applied Physics Letters 110 (19), 2017
14 2017 Controlled stacking growth of uniform InAs quantum dots by molecular beam epitaxy Y Suzuki, T Kaizu, K Yamaguchi
Physica E: Low-dimensional Systems and Nanostructures 21 (2-4), 555-559, 2004
14 2004 Adiabatic two-step photoexcitation effects in intermediate-band solar cells with quantum dot-in-well structure S Asahi, T Kaizu, T Kita
Scientific Reports 9 (1), 7859, 2019
13 2019