| Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors M Si, Y Hu, Z Lin, X Sun, A Charnas, D Zheng, X Lyu, H Wang, K Cho, ... Nano Letters 21 (1), 500-506, 2020 | 122 | 2020 |
| High-performance piezo-phototronic solar cell based on two-dimensional materials DQ Zheng, Z Zhao, R Huang, J Nie, L Li, Y Zhang Nano Energy 32, 448-453, 2017 | 73 | 2017 |
| Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction M Si, Z Zhang, SC Chang, N Haratipour, D Zheng, J Li, UE Avci, PD Ye ACS nano 15 (3), 5689-5695, 2021 | 48 | 2021 |
| A novel scalable energy-efficient synaptic device: Crossbar ferroelectric semiconductor junction M Si, Y Luo, W Chung, H Bae, D Zheng, J Li, J Qin, G Qiu, S Yu, PD Ye 2019 IEEE International Electron Devices Meeting (IEDM), 6.6. 1-6.6. 4, 2019 | 29 | 2019 |
| BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 1014/cm2 at Oxide/Oxide Interface by the Change of … M Si, A Murray, Z Lin, J Andler, J Li, J Noh, S Alajlouni, C Niu, X Lyu, ... IEEE Transactions on Electron Devices 68 (7), 3195-3199, 2021 | 27 | 2021 |
| Piezo-phototronic solar cell based on 2D monochalcogenides materials G Michael, G Hu, D Zheng, Y Zhang Journal of Physics D: Applied Physics 52 (20), 204001, 2019 | 22 | 2019 |
| Enhanced efficiency of flexible GaN/perovskite solar cells based on the piezo-phototronic effect Y Wang, D Zheng, L Li, Y Zhang ACS Applied Energy Materials 1 (7), 3063-3069, 2018 | 22 | 2018 |
| High-performance piezo-phototronic multijunction solar cells based on single-type two-dimensional materials G Michael, Y Zhang, J Nie, D Zheng, G Hu, R Liu, M Dan, L Li, Y Zhang Nano Energy 76, 105091, 2020 | 21 | 2020 |
| Ultrathin InGaO thin film transistors by atomic layer deposition J Zhang, D Zheng, Z Zhang, A Charnas, Z Lin, DY Peide IEEE Electron Device Letters 44 (2), 273-276, 2022 | 20 | 2022 |
| High-efficiency and stable piezo-phototronic organic perovskite solar cell K Gu, D Zheng, L Li, Y Zhang RSC Advances 8, 8694-8698, 2018 | 15 | 2018 |
| First demonstration of BEOL-compatible ultrathin atomiclayer-deposited InZnO transistors with GHz operation and record high bias-stress stability D Zheng, A Charnas, J Anderson, H Dou, Z Hu, Z Lin, Z Zhang, J Zhang, ... 2022 International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2022 | 14 | 2022 |
| Fluorine-passivated In2O3 thin film transistors with improved electrical performance via low-temperature CF4/N2O plasma J Zhang, A Charnas, Z Lin, D Zheng, Z Zhang, PY Liao, D Zemlyanov, ... Applied Physics Letters 121 (17), 2022 | 10 | 2022 |
| Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions D Zheng, M Si, SC Chang, N Haratipour, Z Chen, A Charnas, S Huang, ... Journal of Applied Physics 132 (5), 2022 | 8 | 2022 |
| Extremely Thin Amorphous Indium Oxide Transistors A Charnas, Z Zhang, Z Lin, D Zheng, J Zhang, M Si, PD Ye Advanced Materials 36 (9), 2304044, 2024 | 5 | 2024 |
| Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition J Zhang, Z Lin, Z Zhang, K Xu, H Dou, B Yang, A Charnas, D Zheng, ... IEEE Transactions on Electron Devices, 2023 | 5 | 2023 |
| Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In2O3 FETs Toward Monolithic 3-D Integration PY Liao, D Zheng, S Alajlouni, Z Zhang, M Si, J Zhang, JY Lin, ... IEEE Transactions on Electron Devices 70 (4), 2052-2058, 2023 | 5 | 2023 |
| Controlling threshold voltage of CMOS SOI nanowire FETs with sub-1 nm dipole layers formed by atomic layer deposition D Zheng, W Chung, Z Chen, M Si, C Wilk, DY Peide IEEE Transactions on Electron Devices 69 (2), 851-856, 2021 | 5 | 2021 |
| Ferroelectric FET based coupled-oscillatory network for edge detection E Yu, A Agrawal, D Zheng, M Si, M Koo, DY Peide, SK Gupta, K Roy IEEE Electron Device Letters 42 (11), 1670-1673, 2021 | 5 | 2021 |
| Ultrathin Indium Oxide Thin-Film Transistors With Gigahertz Operation Frequency A Charnas, J Anderson, J Zhang, D Zheng, D Weinstein, DY Peide IEEE Transactions on Electron Devices 70 (2), 532-536, 2022 | 4 | 2022 |
| Ultrathin Atomic-Layer-Deposited In2O3 Radio-Frequency Transistors with Record High fT of 36 GHz and BEOL Compatibility D Zheng, A Charnas, JY Lin, J Anderson, D Weinstein, DY Peide 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 3 | 2023 |
Jie ZhangXiamen UniversityDirección de correo verificada de xmu.edu.cn
