A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte MN Kozicki, C Gopalan, M Balakrishnan, M Mitkova Nanotechnology, IEEE Transactions on 5 (5), 535-544, 2006 | 285 | 2006 |
Demonstration of conductive bridging random access memory (CBRAM) in logic CMOS process C Gopalan, Y Ma, T Gallo, J Wang, E Runnion, J Saenz, F Koushan, ... Solid-State Electronics 58 (1), 54-61, 2011 | 245 | 2011 |
Nonvolatile memory based on solid electrolytes MN Kozicki, C Gopalan, M Balakrishnan, M Park, M Mitkova Non-Volatile Memory Technology Symposium, 2004, 10-17, 2004 | 179 | 2004 |
Information storage using nanoscale electrodeposition of metal in solid electrolytes MN Kozicki, M Mitkova, M Park, M Balakrishnan, C Gopalan Superlattices and microstructures 34 (3-6), 459-465, 2003 | 173 | 2003 |
Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes MN Kozicki, M Balakrishnan, C Gopalan, C Ratnakumar, M Mitkova Non-Volatile Memory Technology Symposium, 2005, 7 pp.-89, 2005 | 150 | 2005 |
Scalable programmable structure, an array including the structure, and methods of forming the same MN Kozicki, M Mitkova, C Gopalan US Patent App. 10/458,551, 2003 | 106 | 2003 |
Conductive-bridge memory (CBRAM) with excellent high-temperature retention JR Jameson, P Blanchard, C Cheng, J Dinh, A Gallo, V Gopalakrishnan, ... 2013 IEEE International Electron Devices Meeting, 30.1. 1-30.1. 4, 2013 | 81 | 2013 |
Electrical C aracteri< ation of Solid State 8onic Memory Elements R Symanczyk, M Balakrishnan, C Gopalan, T Happ, M Kozicki, M Kund, ... | 75 | 2003 |
Resistive switching devices and methods of formation thereof C Gopalan, J Shields, V Gopinath, JSY Wang, KC Tsai US Patent 8,941,089, 2015 | 71 | 2015 |
Programmable logic circuit and method of using same MN Kozicki, M Mitkova, C Gopalan, M Balakrishnan US Patent 7,402,847, 2008 | 65 | 2008 |
Erase mechanism for copper oxide resistive switching memory cells with nickel electrode TN Fang, S Kaza, S Haddad, A Chen, YC Wu, Z Lan, S Avanzino, D Liao, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 65 | 2006 |
Programmable structure including an oxide electrolyte and method of forming programmable structure MN Kozicki, M Mitkova, C Gopalan, M Balakrishnan US Patent 7,101,728, 2006 | 59 | 2006 |
A macro model of programmable metallization cell devices NE Gilbert, C Gopalan, MN Kozicki Solid-state electronics 49 (11), 1813-1819, 2005 | 50 | 2005 |
Total ionizing dose retention capability of conductive bridging random access memory Y Gonzalez-Velo, HJ Barnaby, MN Kozicki, C Gopalan, K Holbert IEEE Electron Device Letters 35 (2), 205-207, 2014 | 43 | 2014 |
Structure of copper-doped tungsten oxide films for solid-state memory C Gopalan, MN Kozicki, S Bhagat, SCP Thermadam, TL Alford, M Mitkova Journal of non-crystalline solids 353 (18-21), 1844-1848, 2007 | 40 | 2007 |
Resistive switching devices having alloyed electrodes and methods of formation thereof WT Lee, C Gopalan, Y Ma, J Shields, P Blanchard, JR Jameson, ... US Patent 8,847,192, 2014 | 25 | 2014 |
Conducting bridge random access memory (CBRAM) device structures Y Ma, C Gopalan, AR Gallo, J Wang US Patent 8,426,839, 2013 | 20 | 2013 |
Contact structure and method for variable impedance memory element C Gopalan US Patent 8,816,314, 2014 | 19 | 2014 |
Germanium sulfide-based solid electrolytes for non-volatile memory M Balakrishnan, MN Kozicki, C Gopalan, M Mitkova 63rd Device Research Conference Digest, 2005. DRC'05. 1, 47-48, 2005 | 14 | 2005 |
Process for making a resistive memory cell with separately patterned electrodes D Liao, SK Pangrle, C Gopalan US Patent 7,566,628, 2009 | 13 | 2009 |