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Clarissa Prawoto
Clarissa Prawoto
Electronics and Computer Engineering, Hong Kong University of Science and Technology
Dirección de correo verificada de connect.ust.hk - Página principal
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A full Ka-band power amplifier with 32.9% PAE and 15.3-dBm power in 65-nm CMOS
H Jia, CC Prawoto, B Chi, Z Wang, CP Yue
IEEE Transactions on Circuits and Systems I: Regular Papers 65 (9), 2657-2668, 2018
1262018
A 32.9% PAE, 15.3 dBm, 21.6–41.6 GHz power amplifier in 65nm CMOS using coupled resonators
H Jia, CC Prawoto, B Chi, Z Wang, CP Yue
2016 IEEE Asian Solid-State Circuits Conference (A-SSCC), 345-348, 2016
242016
Control of hexagonal boron nitride dielectric thickness by single layer etching
Z Ma, C Prawoto, Z Ahmed, Y Xiao, L Zhang, C Zhou, M Chan
Journal of Materials Chemistry C 7 (21), 6273-6278, 2019
162019
Ultralow- Dielectric With Structured Pores for Interconnect Delay Reduction
Y Xiao, Z Ma, C Prawoto, C Zhou, M Chan
IEEE Transactions on Electron Devices 67 (5), 2071-2075, 2020
82020
Interconnect technology with h-BN-capped air-gaps
C Prawoto, Z Ma, Y Xiao, S Raju, C Zhou, M Chan
IEEE Electron Device Letters 40 (11), 1876-1879, 2019
82019
Air-gap technology with a large void-fraction for global interconnect delay reduction
C Prawoto, Z Ma, Y Xiao, S Raju, M Chan
IEEE Transactions on Electron Devices 68 (10), 5078-5084, 2021
62021
Modeling of on-chip wireless power transmission system
S Raju, CC Prawoto, M Chan, CP Yue
2015 IEEE International Wireless Symposium (IWS 2015), 1-4, 2015
62015
Prototyping of terahertz metasurface by one-step lithographically defined templating
S Zhou, S Mu, S Raju, C Prawoto, X Ruan, K Ng, M Chan
IEEE Photonics Technology Letters 30 (10), 971-974, 2018
42018
Compact modeling of phase change memory with parameter extractions
F Ding, X Li, Y Chen, Z Song, R Wang, CC Prawoto, M Chan, L Zhang, ...
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022
22022
Current conduction mechanisms in h-BN as a dielectric material
Z Ma, CC Prawoto, S Li, Z Ahmed, L Zhang, M Chan
2018 IEEE International Conference on Electron Devices and Solid State …, 2018
22018
Impact of CNT diameter distribution on CNT filled via scaling
C Prawoto, S Li, M Chan
2018 IEEE International Conference on Electron Devices and Solid State …, 2018
22018
Influence of fin-width lateral variations of a FinFET
CC Prawoto, M Cheralathan, M Chan
Proceedings of Technical Program-2014 International Symposium on VLSI …, 2014
22014
Low-loss RF passive elements by top-metal air-gap technology
C Prawoto, Z Ma, Y Xiao, S Raju, C Zhou, M Chan
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM …, 2022
12022
High Frequency Monolithic Inductor with Air-Gaps
C Prawoto, Z Ma, Y Xiao, S Raju, C Zhou, M Chan
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020
12020
Integration of Carbon Nanotube as Via Contact to MoS2
Z Ma, Y Xiao, CC Prawoto, Z Ahmed, C Zhou, MS Chan
12019
Synthesis of carbon nanotube in sub-100nm vias on Ni silicide
Y Xiao, S Li, C Prawoto, M Chan
2018 IEEE International Conference on Electron Devices and Solid State …, 2018
12018
A design methodology of efficient on-chip wireless power transmission
S Raju, CC Prawoto, M Chan, CP Yue
2017 International Symposium on VLSI Technology, Systems and Application …, 2017
12017
Hollow Airgap Technology for CMOS Maximum Interconnect Capacitance Reduction
C Prawoto, Z Ma, Y Xiao, S Raju, M Chan
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit …, 2022
2022
IC structure with air gaps and protective layer and method for manufacturing the same
R Salahuddin, MSJ Chan, CC Prawoto
US Patent 11,094,581, 2021
2021
Interconnect Structures for Reducing Intra-Layer Metal-to-Metal Capacitances
C Prawoto, Y Xiao, M Chan
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit …, 2020
2020
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