Daniele Ielmini
Daniele Ielmini
Professor of Electronics
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Cited by
Cited by
In-memory computing with resistive switching devices
D Ielmini, HSP Wong
Nature electronics 1 (6), 333-343, 2018
Phase change materials and their application to nonvolatile memories
S Raoux, W Wełnic, D Ielmini
Chemical reviews 110 (1), 240-267, 2010
Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
D Ielmini
Semiconductor Science and Technology 31 (6), 063002, 2016
Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices
D Ielmini, Y Zhang
Journal of Applied Physics 102 (5), 2007
Modeling the universal set/reset characteristics of bipolar RRAM by field-and temperature-driven filament growth
D Ielmini
IEEE Transactions on Electron Devices 58 (12), 4309-4317, 2011
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
Resistive switching: from fundamentals of nanoionic redox processes to memristive device applications
D Ielmini, R Waser
John Wiley & Sons, 2015
Resistive switching by voltage-driven ion migration in bipolar RRAM—Part II: Modeling
S Larentis, F Nardi, S Balatti, DC Gilmer, D Ielmini
IEEE Transactions on Electron Devices 59 (9), 2468-2475, 2012
Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices
U Russo, D Ielmini, C Cagli, AL Lacaita
IEEE Transactions on Electron Devices 56 (2), 193-200, 2009
Reliability study of phase-change nonvolatile memories
A Pirovano, A Redaelli, F Pellizzer, F Ottogalli, M Tosi, D Ielmini, ...
IEEE Transactions on Device and Materials Reliability 4 (3), 422-427, 2004
Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices
U Russo, D Ielmini, C Cagli, AL Lacaita
IEEE Transactions on Electron Devices 56 (2), 186-192, 2009
Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses
D Ielmini
Physical Review B—Condensed Matter and Materials Physics 78 (3), 035308, 2008
2022 roadmap on neuromorphic computing and engineering
DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ...
Neuromorphic Computing and Engineering 2 (2), 022501, 2022
Study of multilevel programming in programmable metallization cell (PMC) memory
U Russo, D Kamalanathan, D Ielmini, AL Lacaita, MN Kozicki
IEEE transactions on electron devices 56 (5), 1040-1047, 2009
Electronic switching effect and phase-change transition in chalcogenide materials
A Redaelli, A Pirovano, F Pellizzer, AL Lacaita, D Ielmini, R Bez
IEEE Electron Device Letters 25 (10), 684-686, 2004
Electrothermal and phase-change dynamics in chalcogenide-based memories
AL Lacaita, A Redaelli, D Ielmini, F Pellizzer, A Pirovano, A Benvenuti, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
Recovery and drift dynamics of resistance and threshold voltages in phase-change memories
D Ielmini, AL Lacaita, D Mantegazza
IEEE Transactions on Electron Devices 54 (2), 308-315, 2007
Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks
D Ielmini
Microelectronic Engineering 190, 44-53, 2018
Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability
S Ambrogio, S Balatti, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini
IEEE Transactions on electron devices 61 (8), 2912-2919, 2014
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories
D Ielmini, F Nardi, C Cagli
Nanotechnology 22 (25), 254022, 2011
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