Semiconductor structure with self-aligned wells and multiple channel materials DP Brunco
US Patent 9,257,557, 2016
370 2016 Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance DP Brunco, B De Jaeger, G Eneman, J Mitard, G Hellings, A Satta, ...
Journal of The Electrochemical Society 155 (7), H552, 2008
341 2008 High performance Ge pMOS devices using a Si-compatible process flow P Zimmerman, G Nicholas, B De Jaeger, B Kaczer, A Stesmans, ...
2006 International Electron Devices Meeting, 1-4, 2006
174 2006 Complete experimental test of kinetic models for rapid alloy solidification JA Kittl, PG Sanders, MJ Aziz, DP Brunco, MO Thompson
Acta materialia 48 (20), 4797-4811, 2000
157 2000 Record ION /IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability J Mitard, B De Jaeger, FE Leys, G Hellings, K Martens, G Eneman, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
145 2008 High-performance deep submicron Ge pMOSFETs with halo implants G Nicholas, B De Jaeger, DP Brunco, P Zimmerman, G Eneman, ...
IEEE Transactions on Electron Devices 54 (9), 2503-2511, 2007
121 2007 Interface engineering for Ge metal-oxide–semiconductor devices A Dimoulas, DP Brunco, S Ferrari, JW Seo, Y Panayiotatos, ...
Thin Solid Films 515 (16), 6337-6343, 2007
105 2007 Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p n Junctions G Eneman, M Wiot, A Brugere, OSI Casain, S Sonde, DP Brunco, ...
IEEE Transactions on Electron Devices 55 (9), 2287-2296, 2008
102 2008 Scaling down the interpoly dielectric for next generation flash memory: Challenges and opportunities B Govoreanu, DP Brunco, J Van Houdt
Solid-state electronics 49 (11), 1841-1848, 2005
92 2005 Temperature measurements of polyimide during KrF excimer laser ablation DP Brunco, MO Thompson, CE Otis, PM Goodwin
Journal of applied Physics 72 (9), 4344-4350, 1992
92 1992 Degradation and breakdown of 0.9 nm EOT SiO/sub 2/ALD HfO/sub 2/metal gate stacks under positive constant voltage stress R Degraeve, T Kauerauf, M Cho, M Zahid, LA Ragnarsson, DP Brunco, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
87 2005 Germanium partitioning in silicon during rapid solidification DP Brunco, MO Thompson, DE Hoglund, MJ Aziz, HJ Gossmann
Journal of applied physics 78 (3), 1575-1582, 1995
87 1995 Nonequilibrium partitioning during rapid solidification of Si As alloys JA Kittl, MJ Aziz, DP Brunco, MO Thompson
Journal of crystal growth 148 (1-2), 172-182, 1995
81 1995 Silicides and germanides for nano-CMOS applications JA Kittl, K Opsomer, C Torregiani, C Demeurisse, S Mertens, DP Brunco, ...
Materials Science and Engineering: B 154, 144-154, 2008
73 2008 Electron energy band alignment at interfaces of (100) Ge with rare-earth oxide insulators VV Afanas’ev, S Shamuilia, A Stesmans, A Dimoulas, Y Panayiotatos, ...
Applied physics letters 88 (13), 2006
65 2006 High performance 70-nm germanium pMOSFETs with boron LDD implants G Hellings, J Mitard, G Eneman, B De Jaeger, DP Brunco, D Shamiryan, ...
IEEE Electron Device Letters 30 (1), 88-90, 2008
61 2008 Materials and electrical characterization of molecular beam deposited CeO2 and CeO2/HfO2 bilayers on germanium DP Brunco, A Dimoulas, N Boukos, M Houssa, T Conard, K Martens, ...
Journal of Applied Physics 102 (2), 2007
61 2007 Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process L Witters, J Mitard, R Loo, G Eneman, H Mertens, DP Brunco, SH Lee, ...
2013 IEEE International Electron Devices Meeting, 20.4. 1-20.4. 4, 2013
57 2013 Germanium: The past and possibly a future material for microelectronics DP Brunco, B De Jaeger, G Eneman, A Satta, V Terzieva, L Souriau, ...
ECS Transactions 11 (4), 479, 2007
57 2007 Scaling to sub-1 nm equivalent oxide thickness with hafnium oxide deposited by atomic layer deposition A Delabie, M Caymax, B Brijs, DP Brunco, T Conard, E Sleeckx, ...
Journal of the Electrochemical Society 153 (8), F180, 2006
57 2006