Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy DB Jackrel, SR Bank, HB Yuen, MA Wistey, JS Harris, AJ Ptak, ...
Journal of Applied Physics 101 (11), 2007
253 2007 Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V G Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ...
2012 International Electron Devices Meeting, 32.6. 1-32.6. 4, 2012
195 2012 MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 J Guo, G Li, F Faria, Y Cao, R Wang, J Verma, X Gao, S Guo, E Beam, ...
IEEE Electron device letters 33 (4), 525-527, 2012
176 2012 AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 at 0.5 V R Li, Y Lu, G Zhou, Q Liu, SD Chae, T Vasen, WS Hwang, Q Zhang, P Fay, ...
IEEE electron device letters 33 (3), 363-365, 2012
163 2012 Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned Y Lu, G Zhou, R Li, Q Liu, Q Zhang, T Vasen, SD Chae, T Kosel, M Wistey, ...
IEEE Electron Device Letters 33 (5), 655-657, 2012
136 2012 Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE RegrowthU Singisetti, MA Wistey, GJ Burek, AK Baraskar, BJ Thibeault, ...
IEEE Electron Device Letters 30 (11), 1128-1130, 2009
116 2009 Recent Progress on 1.55- Dilute-Nitride Lasers SR Bank, H Bae, LL Goddard, HB Yuen, MA Wistey, R Kudrawiec, ...
IEEE Journal of Quantum Electronics 43 (9), 773-785, 2007
112 2007 Low-threshold continuous-wave 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs SR Bank, MA Wistey, LL Goddard, HB Yuen, V Lordi, JS Harris
IEEE journal of quantum electronics 40 (6), 656-664, 2004
112 2004 The role of Sb in the MBE growth of (GaIn)(NAsSb) K Volz, V Gambin, W Ha, MA Wistey, H Yuen, S Bank, JS Harris
Journal of Crystal Growth 251 (1-4), 360-366, 2003
108 2003 InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and Ratio Near G Zhou, Y Lu, R Li, Q Zhang, Q Liu, T Vasen, H Zhu, JM Kuo, T Kosel, ...
IEEE Electron Device Letters 33 (6), 782-784, 2012
105 2012 GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy V Gambin, W Ha, M Wistey, H Yuen, SR Bank, SM Kim, JS Harris
IEEE Journal of selected topics in quantum electronics 8 (4), 795-800, 2002
101 2002 Ultralow resistance in situ Ohmic contacts to InGaAs/InP U Singisetti, MA Wistey, JD Zimmerman, BJ Thibeault, MJW Rodwell, ...
Applied Physics Letters 93 (18), 2008
96 2008 Long-wavelength GaInNAs (Sb) lasers on GaAs W Ha, V Gambin, S Bank, M Wistey, H Yuen, S Kim, JS Harris
IEEE journal of quantum electronics 38 (9), 1260-1267, 2002
95 * 2002 Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 μm W Ha, V Gambin, M Wistey, S Bank, S Kim, JS Harris
IEEE Photonics Technology Letters 14 (5), 591-593, 2002
93 2002 Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications JS Harris Jr, R Kudrawiec, HB Yuen, SR Bank, HP Bae, MA Wistey, ...
physica status solidi (b) 244 (8), 2707-2729, 2007
83 2007 Room-temperature continuous-wave 1.55 µm GaInNAsSb laser on GaAs SR Bank, HP Bae, HB Yuen, MA Wistey, LL Goddard, JS Harris Jr
Electronics Letters 42 (3), 1, 2006
78 2006 Low-threshold CW GaInNAsSb/GaAs laser at 1.49 mm SR Bank, MA Wistey, HB Yuen, LL Goddard, W Ha, JS Harris Jr
Electron. Lett 39 (20), 1445-1446, 2003
77 2003 Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs AK Baraskar, MA Wistey, V Jain, U Singisetti, G Burek, BJ Thibeault, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
74 2009 Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate G Zhou, Y Lu, R Li, Q Zhang, WS Hwang, Q Liu, T Vasen, C Chen, H Zhu, ...
IEEE Electron Device Letters 32 (11), 1516-1518, 2011
72 2011 Chemical routes to Ge∕ Si (100) structures for low temperature Si-based semiconductor applications MA Wistey, YY Fang, J Tolle, AVG Chizmeshya, J Kouvetakis
Applied Physics Letters 90 (8), 2007
67 2007