| Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes P Waltereit, O Brandt, A Trampert, HT Grahn, J Menniger, M Ramsteiner, ... nature 406 (6798), 865-868, 2000 | 2206 | 2000 |
| Colossal magnetic moment of Gd in GaN S Dhar, O Brandt, M Ramsteiner, VF Sapega, KH Ploog Physical Review Letters 94 (3), 037205, 2005 | 444 | 2005 |
| Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy S Ghosh, P Waltereit, O Brandt, HT Grahn, KH Ploog Physical Review-Section B-Condensed Matter 65 (7), 75202-75202, 2002 | 346 | 2002 |
| X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films VM Kaganer, O Brandt, A Trampert, KH Ploog Physical Review B—Condensed Matter and Materials Physics 72 (4), 045423, 2005 | 263 | 2005 |
| Suitability of Au-and self-assisted GaAs nanowires for optoelectronic applications S Breuer, C Pfuller, T Flissikowski, O Brandt, HT Grahn, L Geelhaar, ... Nano letters 11 (3), 1276-1279, 2011 | 253 | 2011 |
| Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H–SiC(0001) by reactive molecular-beam epitaxy S Dhar, O Brandt, A Trampert, L Daweritz, KJ Friedland, KH Ploog, ... Applied physics letters 82 (13), 2077-2079, 2003 | 252 | 2003 |
| Direct measurement of local lattice distortions in strained layer structures by HREM R Bierwolf, M Hohenstein, F Phillipp, O Brandt, GE Crook, K Ploog Ultramicroscopy 49 (1-4), 273-285, 1993 | 250 | 1993 |
| Surface reconstructions of zinc-blende GaN/GaAs (001) in plasma-assisted molecular-beam epitaxy O Brandt, H Yang, B Jenichen, Y Suzuki, L Däweritz, KH Ploog Physical Review B 52 (4), R2253, 1995 | 215 | 1995 |
| Direct comparison of catalyst-free and catalyst-induced GaN nanowires C Chèze, L Geelhaar, O Brandt, WM Weber, H Riechert, S Münch, ... Nano Research 3, 528-536, 2010 | 207 | 2010 |
| High p-type conductivity in cubic GaN/GaAs (113) A by using Be as the acceptor and O as the codopant O Brandt, H Yang, H Kostial, KH Ploog Applied physics letters 69 (18), 2707-2709, 1996 | 196 | 1996 |
| Impact of nucleation conditions on the structural and optical properties of M-plane GaN (1-100) grown on γ-LiAlO2 YJ Sun, O Brandt, U Jahn, TY Liu, A Trampert, S Cronenberg, S Dhar, ... Journal of applied physics 92 (10), 5714-5719, 2002 | 193 | 2002 |
| Growth of M-plane GaN (1-100) on γ-LiAlO2(100) P Waltereit, O Brandt, M Ramsteiner, R Uecker, P Reiche, KH Ploog Journal of crystal growth 218 (2), 143-147, 2000 | 189 | 2000 |
| Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K S Dhar, L Pérez, O Brandt, A Trampert, KH Ploog, J Keller, B Beschoten Physical Review B—Condensed Matter and Materials Physics 72 (24), 245203, 2005 | 183 | 2005 |
| Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescence J Menniger, U Jahn, O Brandt, H Yang, K Ploog Physical Review B 53 (4), 1881, 1996 | 175* | 1996 |
| Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC (0001) P Waltereit, O Brandt, A Trampert, M Ramsteiner, M Reiche, M Qi, ... Applied physics letters 74 (24), 3660-3662, 1999 | 163 | 1999 |
| Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy M Giehler, M Ramsteiner, O Brandt, H Yang, KH Ploog Applied physics letters 67 (6), 733-735, 1995 | 158 | 1995 |
| Luminescence associated with stacking faults in GaN J Lähnemann, U Jahn, O Brandt, T Flissikowski, P Dogan, HT Grahn Journal of Physics D: Applied Physics 47 (42), 423001, 2014 | 157 | 2014 |
| Polarity in GaN and ZnO: Theory, measurement, growth, and devices J Zuniga-Perez, V Consonni, L Lymperakis, X Kong, A Trampert, ... Applied Physics Reviews 3 (4), 2016 | 152 | 2016 |
| Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments U Jahn, J Lähnemann, C Pfüller, O Brandt, S Breuer, B Jenichen, ... Physical Review B—Condensed Matter and Materials Physics 85 (4), 045323, 2012 | 152 | 2012 |
| Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons O Brandt, C Pfüller, C Chèze, L Geelhaar, H Riechert Physical Review B—Condensed Matter and Materials Physics 81 (4), 045302, 2010 | 150 | 2010 |
Holger T. GrahnPaul-Drude-Institut für FestkörperelektronikVerified email at pdi-berlin.de
