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Nature nanotechnology 12 (10), 980-986, 2017
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Physical review letters 119 (8), 087203, 2017
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IEEE Transactions on Electron Devices 69 (4), 2196-2202, 2022
56 2022 Solar selective absorbing coatings TiN/TiSiN/SiN prepared on stainless steel substrates J Feng, S Zhang, X Liu, H Yu, H Ding, Y Tian, J Ouyang
Vacuum 121, 135-141, 2015
44 2015 Effects of Oxidation of Top and Bottom Interfaces on the Electric, Magnetic, and Spin-Orbit Torque Properties of J Feng, E Grimaldi, CO Avci, M Baumgartner, G Cossu, A Rossi, ...
Physical Review Applied 13 (4), 044029, 2020
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Physical Review Applied 15 (3), 034077, 2021
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Physical Review B 100 (2), 024426, 2019
19 2019 Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for … K Huang, X Duan, J Feng, Y Sun, C Lu, C Chen, G Jiao, X Lin, J Shao, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
15 2022 Motion Analysis and Real‐Time Trajectory Prediction of Magnetically Steerable Catalytic Janus Micromotors J Wu, D Folio, J Zhu, B Jang, X Chen, J Feng, P Gambardella, J Sort, ...
Advanced Intelligent Systems 4 (11), 2200192, 2022
9 2022 Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability J Guo, Y Sun, L Wang, X Duan, K Huang, Z Wang, J Feng, Q Chen, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
9 2022 Investigation of asymmetric characteristics of novel vertical channel-all-around (CAA) In-Ga-Zn-O field effect transistors Q Chen, L Wang, X Duan, J Guo, Z Wang, K Huang, J Feng, Y Sun, G Jiao, ...
IEEE Electron Device Letters 43 (6), 894-897, 2022
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ETH Zurich, 2019
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SID Symposium Digest of Technical Papers 53 (1), 318-321, 2022
2022 