| Dirac cones, topological edge states, and nontrivial flat bands in two-dimensional semiconductors with a honeycomb nanogeometry E Kalesaki, C Delerue, C Morais Smith, W Beugeling, G Allan, ... Physical review x 4 (1), 011010, 2014 | 174 | 2014 |
| Electronic structure of atomically coherent square semiconductor superlattices with dimensionality below two E Kalesaki, WH Evers, G Allan, D Vanmaekelbergh, C Delerue Physical Review B—Condensed Matter and Materials Physics 88 (11), 115431, 2013 | 96 | 2013 |
| Topological states in multi-orbital HgTe honeycomb lattices W Beugeling, E Kalesaki, C Delerue, YM Niquet, D Vanmaekelbergh, ... Nature communications 6 (1), 6316, 2015 | 76 | 2015 |
| Effect of edge threading dislocations on the electronic structure of InN E Kalesaki, J Kioseoglou, L Lymperakis, P Komninou, T Karakostas Applied Physics Letters 98 (7), 2011 | 30 | 2011 |
| Valence band splitting in Cu2(Sn,Ge,Si)S3: Effect on optical absorption spectra J De Wild, E Kalesaki, L Wirtz, PJ Dale physica status solidi (RRL)–Rapid Research Letters 11 (2), 1600410, 2017 | 27 | 2017 |
| Morphology and strain of self-assembled semipolar GaN quantum dots in (112¯ 2) AlN GP Dimitrakopulos, E Kalesaki, J Kioseoglou, T Kehagias, A Lotsari, ... Journal of Applied Physics 108 (10), 2010 | 25 | 2010 |
| Polar AlN/GaN interfaces: structures and energetics J Kioseoglou, E Kalesaki, L Lymperakis, GP Dimitrakopulos, P Komninou, ... physica status solidi (a) 206 (8), 1892-1897, 2009 | 24 | 2009 |
| Strain accommodation and interfacial structure of AlN interlayers in GaN GP Dimitrakopulos, E Kalesaki, P Komninou, T Kehagias, J Kioseoglou, ... Crystal Research and Technology: Journal of Experimental and Industrial …, 2009 | 21 | 2009 |
| Study of InN/GaN interfaces using molecular dynamics J Kioseoglou, E Kalessaki, GP Dimitrakopulos, P Komninou, T Karakostas Journal of materials science 43, 3982-3988, 2008 | 21 | 2008 |
| Screw threading dislocations in AlN: Structural and electronic properties of In and O doped material J Kioseoglou, E Kalesaki, I Belabbas, J Chen, G Nouet, H Kirmse, ... Journal of Applied Physics 110 (5), 2011 | 18 | 2011 |
| Electronic structure of 1/6< 202¯ 3> partial dislocations in wurtzite GaN J Kioseoglou, E Kalesaki, L Lymperakis, J Neugebauer, P Komninou, ... Journal of Applied Physics 109 (8), 2011 | 18 | 2011 |
| Atomic scale morphology, growth behaviour and electronic properties of semipolar {1013} GaN surfaces J Kioseoglou, E Kalesaki, L Lymperakis, T Karakostas, P Komninou J. Phys.: Condens. Matter 25 (045008), 045008, 2013 | 10 | 2013 |
| Reconstructions and electronic structure of (112¯ 2) and (112¯ 2¯) semipolar AlN surfaces E Kalesaki, L Lymperakis, J Kioseoglou, J Neugebauer, T Karakostas, ... Journal of Applied Physics 112 (3), 2012 | 9 | 2012 |
| Quantum efficiency measurements and modeling as tools to monitor air annealing of Cu2SnS 3 solar cells J De Wild, E Kalesaki, EVC Robert, PJ Dale IEEE Journal of Photovoltaics 7 (1), 268-272, 2016 | 8 | 2016 |
| Atomistic modeling and HRTEM analysis of misfit dislocations in InN/GaN heterostructures J Kioseoglou, E Kalesaki, GP Dimitrakopulos, T Kehagias, P Komninou, ... Applied surface science 260, 23-28, 2012 | 8 | 2012 |
| Effect of doping on screw threading dislocations in AlN and their role as conductive nanowires J Kioseoglou, E Kalesaki, I Belabbas, J Chen, G Nouet, P Komninou, ... physica status solidi c 9 (3‐4), 484-487, 2012 | 8 | 2012 |
| Structural and electronic properties of elastically strained InN/GaN quantum well multilayer heterostructures J Kioseoglou, P Komninou, J Chen, G Nouet, E Kalesaki, T Karakostas physica status solidi (c) 11 (2), 289-292, 2014 | 6 | 2014 |
| Interfaces between nonpolar and semipolar III-nitride semiconductor orientations: Structure and defects J Kioseoglou, A Lotsari, E Kalesaki, GP Dimitrakopulos Journal of Applied Physics 111 (3), 2012 | 5 | 2012 |
| Indium adsorption and incorporation mechanisms in AlN E Kalesaki, J Kioseoglou, P Komninou, T Karakostas Journal of materials science 46 (12), 4377-4383, 2011 | 4 | 2011 |
| Preparation and study of 2-D semiconductors with Dirac type bands due to the honeycomb nanogeometry E Kalesaki, MP Boneschanscher, JJ Geuchies, C Delerue, CM Smith, ... Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III …, 2014 | 2 | 2014 |
