Current status and future trends of SiGe BiCMOS technology DL Harame, DC Ahlgren, DD Coolbaugh, JS Dunn, GG Freeman, ...
IEEE Transactions on Electron Devices 48 (11), 2575-2594, 2001
225 2001 Power amplifier modules including related systems, devices, and methods HE Chen, Y Guo, DV Hoang, M Janani, TM Ko, PJ Lehtola, AJ LoBianco, ...
US Patent 9,041,472, 2015
137 * 2015 Design of high-efficiency current-mode class-D amplifiers for wireless handsets TP Hung, AG Metzger, PJ Zampardi, M Iwamoto, PM Asbeck
IEEE transactions on microwave theory and techniques 53 (1), 144-151, 2005
101 2005 Fast novel thermal analysis simulation tool for integrated circuits (FANTASTIC) L Codecasa, V d'Alessandro, A Magnani, N Rinaldi, PJ Zampardi
20th International Workshop on Thermal Investigations of ICs and Systems, 1-6, 2014
91 2014 A comparison of linear handset power amplifiers in different bipolar technologies K Nellis, PJ Zampardi
IEEE Journal of Solid-State Circuits 39 (10), 1746-1754, 2004
77 2004 Linearity improvement of HBT-based Doherty power amplifiers based on a simple analytical model Y Zhao, AG Metzger, PJ Zampardi, M Iwamoto, PM Asbeck
IEEE transactions on microwave theory and techniques 54 (12), 4479-4488, 2006
62 2006 BiFET INCLUDING A FET HAVING INCREASED LINEARITY AND MANUFACTURABILITY PJ Zampardi, RN Pierson
US Patent 6,906,359, 2005
50 2005 A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies S Zhang, G Niu, JD Cressler, SJ Mathew, U Gogineni, SD Clark, ...
IEEE Transactions on Nuclear Science 47 (6), 2521-2527, 2000
48 2000 GaInP/GaAs HBT's for high-speed integrated circuit applications WJ Ho, MF Chang, A Sailer, P Zampardi, D Deakin, B McDermott, ...
IEEE Transactions on Electron Devices 40 (11), 2113-2114, 1993
48 1993 A broad-band lumped element analytic model incorporating skin effect and substrate loss for inductors and inductor like components for silicon technology performance assessment … F Rotella, BK Bhattacharya, V Blaschke, M Matloubian, A Brotman, ...
IEEE transactions on electron devices 52 (7), 1429-1441, 2005
44 2005 Characterization of heterojunction bipolar transistor structures using cross-sectional scanning force microscopy PA Rosenthal, ET Yu, RL Pierson, PJ Zampardi
Journal of Applied Physics 87 (4), 1937-1942, 2000
40 2000 Process-compensated HBT power amplifier bias circuits and methods DS Ripley, PJ Lehtola, PJ Zampardi, H Shao, TM Ko, MT Ozalas
US Patent 9,419,567, 2016
38 2016 Role of neutral base recombination in high gain AlGaAs/GaAs HBT's RE Welser, N Pan, DP Vu, PJ Zampardi, BT McDermott
IEEE Transactions on Electron Devices 46 (8), 1599-1607, 1999
38 1999 Apparatus and methods for reducing impact of high RF loss plating W Sun, PJ Zampardi, H Shao
US Patent 8,896,091, 2014
37 2014 Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications PF Chen, UMT Hsin, RJ Welty, PM Asbeck, RL Pierson, PJ Zampardi, ...
IEEE transactions on microwave theory and techniques 47 (8), 1433-1438, 1999
37 1999 Power amplifier modules including bipolar transistor with grading and related systems, devices, and methods TM Ko, PJ Lehtola, MT Ozalas, DS Ripley, H Shao, PJ Zampardi
US Patent 9,520,835, 2016
36 2016 Methods and apparatus for a composite collector double heterojunction bipolar transistor CE Chang, RL Pierson, PJ Zampardi, PM Asbeck
US Patent 6,563,145, 2003
35 2003 40 Gbit/s AlGaAs/GaAs HBT 4: 1 multiplexer IC K Runge, RL Pierson, PJ Zampardi, PB Thomas, J Yu, KC Wang
Electronics Letters 31 (11), 876-877, 1995
35 1995 Accurate and efficient analysis of the upward heat flow in InGaP/GaAs HBTs through an automated FEM‐based tool and Design of Experiments V d'Alessandro, AP Catalano, L Codecasa, PJ Zampardi, B Moser
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2019
34 2019 Power amplifier modules including wire bond pad and related systems, devices, and methods HB Modi, SL Petty-Weeks, H Shao, W Sun, PJ Zampardi, G Zhang
US Patent 9,660,584, 2017
34 2017