Behzad Ebrahimi

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Ali Afzali-KushaUniversity of TehranDirección de correo verificada de ut.ac.ir
Massoud PedramCharles Lee Powell Professor of Electrical Engineering & Computer Science, Univ of SouthernDirección de correo verificada de usc.edu
Mehdi SaremiResearcherDirección de correo verificada de asu.edu
Hassan Afzali-KushaUniversity of Southern CaliforniaDirección de correo verificada de usc.edu
Hossein AghababaUniversity of TehranDirección de correo verificada de ut.ac.ir
Masoud RostamiMicrosoftDirección de correo verificada de microsoft.com
kolsoom mehrabiPhD Student at Shiraz UniversityDirección de correo verificada de shirazu.ac.ir
Saeed ZeinolabedinzadehArizona State UniversityDirección de correo verificada de asu.edu
Mohammad AnsariEE. Ph.D.Dirección de correo verificada de ut.ac.ir
Zainalabedin NavabiProfessor of Electrical and Computer Engineering, University of TehranDirección de correo verificada de ut.ac.ir
Vahid MoalemiPHD student at University of Texas at DallasDirección de correo verificada de utdallas.edu
Reza AsadpourPurdue UniversityDirección de correo verificada de purdue.edu
Mohsen JafariUniversity of MichiganDirección de correo verificada de umich.edu
Mohsen AsadUniversity of WaterlooDirección de correo verificada de uwaterloo.ca
Farzan JazaeriResearch Scientist, EPFLDirección de correo verificada de epfl.ch
H. R. AhmadiAssistant Professor, University of TehranDirección de correo verificada de ut.ac.ir
Shaahin HessabiDept. of Computer Science & Engineering, Sharif University of Technology, IranDirección de correo verificada de sharif.edu
Sina Sayyah EnsanPennsylvania State UniversityDirección de correo verificada de psu.edu
Samaneh Soleimani-AmiriBabol Noshirvani University of TechnologyDirección de correo verificada de nit.ac.ir
Mohammad Hossein MoaiyeriAssistant Professor of Electrical and Computer Engineering, Shahid Beheshti University, IranDirección de correo verificada de sbu.ac.ir

Behzad Ebrahimi

Assistant Professor of Electrical Engineering, Science & Research Branch, Islamic Azad University

Dirección de correo verificada de srbiau.ac.ir - Página principal

VLSI Device and Circuit Design Reliability-aware Design SRAM Design


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement M Saremi, B Ebrahimi, A Afzali-Kusha, S Mohammadi Microelectronics Reliability 51 (12), 2069-2076, 2011	46	2011
A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies M Ansari, H Afzali-Kusha, B Ebrahimi, Z Navabi, A Afzali-Kusha, ... Integration 50, 91-106, 2015	40	2015
Process variation study of ground plane SOI MOSFET M Saremi, B Ebrahimi, AA Kusha, M Saremi 2nd Asia symposium on quality electronic design (ASQED), 66-69, 2010	37	2010
Statistical design optimization of FinFET SRAM using back-gate voltage B Ebrahimi, M Rostami, A Afzali-Kusha, M Pedram IEEE Transactions on Very Large Scale Integration (VLSI) Systems 19 (10 …, 2010	35	2010
Ground plane SOI MOSFET based SRAM with consideration of process variation M Saremi, B Ebrahimi, A Afzali-Kusha 2010 IEEE international conference of electron devices and solid-state …, 2010	24	2010
Low standby power and robust finfet based sram design B Ebrahimi, S Zeinolabedinzadeh, A Afzali-Kusha 2008 IEEE Computer Society Annual Symposium on VLSI, 185-190, 2008	22	2008
G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems H Aghababa, B Ebrahimi, M Saremi, V Moalemi, B Forouzandeh IEICE Electronics Express 9 (10), 881-887, 2012	20	2012
Robust FinFET SRAM design based on dynamic back-gate voltage adjustment B Ebrahimi, A Afzali-Kusha, H Mahmoodi Microelectronics Reliability 54 (11), 2604-2612, 2014	19	2014
Probability calculation of read failures in nano-scaled SRAM cells under process variations H Aghababa, B Ebrahimi, A Afzali-Kusha, M Pedram Microelectronics Reliability 52 (11), 2805-2811, 2012	16	2012
A high speed subthreshold SRAM cell design AR Ahmadimehr, B Ebrahimi, A Afzali-Kusha 2009 1st Asia Symposium on Quality Electronic Design, 9-13, 2009	16	2009
Low power and robust 8T/10T subthreshold SRAM cells B Ebrahimi, H Afzali-Kusha, A Afzali-Kusha 2012 International Conference on Synthesis, Modeling, Analysis and …, 2012	14	2012
Ultra-low power FinFET based SRAM cell employing sharing current concept M Imani, M Jafari, B Ebrahimi, TS Rosing Microelectronics Reliability, 2015	11	2015
A robust and low power 7T SRAM cell design K Mehrabi, B Ebrahimi, A Afzali-Kusha 2015 18th CSI International Symposium on Computer Architecture and Digital …, 2015	10	2015
Realistic CNFET based SRAM cell design for better write stability B Ebrahimi, A Afzali-Kusha 2009 1st Asia Symposium on Quality Electronic Design, 14-18, 2009	9	2009
An accurate analytical I–V model for sub-90-nm MOSFETs and its application to read static noise margin modeling B Afzal, B Ebrahimi, A Afzali-Kusha, M Pedram Journal of Zhejiang University SCIENCE C 13 (1), 58-70, 2012	6	2012
A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages B Ebrahimi, R Asadpour, A Afzali‐Kusha, M Pedram International Journal of Circuit Theory and Applications 43 (12), 2011-2024, 2015	5	2015
A robust and low power 7T SRAM cell design M Kolsoom, B Ebrahimi, A Afzali-Kusha Computer Architecture and Digital Systems (CADS), 2015 18th CSI …, 2015	5	2015
High-performance and high-yield 5 nm underlapped FinFET SRAM design using p-type access transistors R Yarmand, B Ebrahimi, H Afzali-Kusha, A Afzali-Kusha, M Pedram Sixteenth International Symposium on Quality Electronic Design, 10-17, 2015	5	2015
An analytical model for read static noise margin including soft oxide breakdown, negative and positive bias temperature instabilities B Afzal, B Ebrahimi, A Afzali-Kusha, H Mahmoodi Microelectronics Reliability 53 (5), 670-675, 2013	5	2013
Modeling read SNM considering both soft oxide breakdown and negative bias temperature instability B Afzal, B Ebrahimi, A Afzali-Kusha, H Mahmoodi Microelectronics Reliability 52 (12), 2948-2954, 2012	4	2012

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