Andrew R J Marshall

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JPR DavidUniversity of SheffieldDirección de correo verificada de sheffield.ac.uk
Chee Hing TanThe University Of SheffieldDirección de correo verificada de sheffield.ac.uk
Adam CraigResearch Associate, Lancaster University UKDirección de correo verificada de bangwizz.com
Peter CarringtonSenior Lecturer, Lancaster UniversityDirección de correo verificada de lancaster.ac.uk
QI LULancaster University, UKDirección de correo verificada de lancaster.ac.uk
Pin Jern KerProfessor, School of Engineering & Technology, Sunway UniversityDirección de correo verificada de sunway.edu.my
Andrey KrysaSenior Research Fellow, University of SheffieldDirección de correo verificada de sheffield.ac.uk
gary wicksuniversity of rochester, cornell university, amethystDirección de correo verificada de optics.rochester.edu
Aiyeshah AlhodaibQassim UniversityDirección de correo verificada de qu.edu.sa
G R SavichMonroe Community College, University of RochesterDirección de correo verificada de rochester.edu
Magnus C. WagenerIncomar AeronauticsDirección de correo verificada de mandela.ac.za
Sergio I. MolinaUniversidad de CádizDirección de correo verificada de uca.es
Kesaria ManojCardiff UniversityDirección de correo verificada de cardiff.ac.uk
Michael ThompsonLancaster UniversityDirección de correo verificada de lancaster.ac.uk
Ana M SanchezProfessor, University of WarwickDirección de correo verificada de warwick.ac.uk
Johannes Reinhardt Bothaprofessor of physics, nelson mandela universityDirección de correo verificada de mandela.ac.za
Jo Shien NgProfessor of Semiconductor Devices, University of SheffieldDirección de correo verificada de sheffield.ac.uk
Yasir NooriAssistant Professor in Nanoelectronics - University of SouthamptonDirección de correo verificada de southampton.ac.uk
Mark HopkinsonUniversity of SheffieldDirección de correo verificada de sheffield.ac.uk
Qiandong ZhuangPhysics Department, Lancaster UniversityDirección de correo verificada de lancaster.ac.uk

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Andrew R J Marshall

Lecturer of Physics, Lancaster University

Dirección de correo verificada de lancaster.ac.uk - Página principal

Semiconductor materials and devices


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Low leakage-current InAsSb nanowire photodetectors on silicon MD Thompson, A Alhodaib, AP Craig, A Robson, A Aziz, A Krier, ... Nano letters 16 (1), 182-187, 2016	81	2016
Mid-infrared InAs/InAsSb superlattice nBn photodetector monolithically integrated onto silicon E Delli, V Letka, PD Hodgson, E Repiso, JP Hayton, AP Craig, Q Lu, ... Acs Photonics 6 (2), 538-544, 2019	79	2019
Impact ionization in InAs electron avalanche photodiodes ARJ Marshall, JPR David, CH Tan IEEE Transactions on Electron Devices 57 (10), 2631-2638, 2010	67	2010
Extremely low excess noise in InAs electron avalanche photodiodes ARJ Marshall, CH Tan, MJ Steer, JPR David IEEE Photonics Technology Letters 21 (13), 866-868, 2009	64	2009
Temperature dependence of leakage current in InAs avalanche photodiodes PJ Ker, ARJ Marshall, AB Krysa, JPR David, CH Tan IEEE Journal of quantum electronics 47 (8), 1123-1128, 2011	60	2011
High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit ARJ Marshall, PJ Ker, A Krysa, JPR David, CH Tan Optics express 19 (23), 23341-23349, 2011	55	2011
InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000 C Q Lu, X Zhou, A Krysa, A Marshall, P Carrington, CH Tan, A Krier Solar Energy Materials and Solar Cells 179, 334-338, 2018	54	2018
Fabrication of InAs photodiodes with reduced surface leakage current ARJ Marshall, CH Tan, JPR David, JS Ng, M Hopkinson Optical Materials in Defence Systems Technology IV 6740, 51-59, 2007	41	2007
Resonant cavity-enhanced photodetector incorporating a type-II superlattice to extend MWIR sensitivity V Letka, A Bainbridge, AP Craig, F Al-Saymari, ARJ Marshall Optics Express 27 (17), 23970-23980, 2019	38	2019
Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared AP Craig, F Al-Saymari, M Jain, A Bainbridge, GR Savich, T Golding, ... Applied Physics Letters 114 (15), 2019	29	2019
Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing PJ Ker, ARJ Marshall, JPR David, CH Tan physica status solidi c 9 (2), 310-313, 2012	28	2012
InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs JA Keen, D Lane, M Kesaria, ARJ Marshall, A Krier Journal of Physics D: Applied Physics 51 (7), 075103, 2018	27	2018
InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers Q Lu, Q Zhuang, A Marshall, M Kesaria, R Beanland, A Krier Semiconductor Science and Technology 29 (7), 075011, 2014	26	2014
Room-temperature operation of low-voltage, non-volatile, compound-semiconductor memory cells O Tizno, ARJ Marshall, N Fernández-Delgado, M Herrera, SI Molina, ... Scientific reports 9 (1), 8950, 2019	25	2019
Open‐circuit voltage recovery in type II GaSb/GaAs quantum ring solar cells under high concentration H Fujita, PJ Carrington, MC Wagener, JR Botha, ARJ Marshall, J James, ... Progress in Photovoltaics: Research and Applications 23 (12), 1896-1900, 2015	24	2015
Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement JE Green, WS Loh, ARJ Marshall, BK Ng, RC Tozer, JPR David, ... IEEE transactions on electron devices 59 (4), 1030-1036, 2012	23	2012
Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer Q Lu, R Beanland, D Montesdeoca, PJ Carrington, A Marshall, A Krier Solar Energy Materials and Solar Cells 191, 406-412, 2019	20	2019
III-V semiconductor extended short-wave infrared detectors GR Savich, DE Sidor, X Du, GW Wicks, MC Debnath, TD Mishima, ... Journal of Vacuum Science & Technology B 35 (2), 2017	20	2017
Room-temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires A Alhodaib, YJ Noori, PJ Carrington, AM Sanchez, MD Thompson, ... Nano Letters 18 (1), 235-240, 2017	18	2017
Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells L Tang, C Xu, Z Liu, Q Lu, A Marshall, A Krier Solar Energy Materials and Solar Cells 163, 263-269, 2017	15	2017

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