| An inverter gate design based on nanoscale S-FED as a function of reservoir thickness BJ Touchaee, N Manavizadeh IEEE Transactions on Electron Devices 62 (10), 3147-3152, 2015 | 23 | 2015 |
| Design and simulation of low-power logic gates based on nanoscale side-contacted FED BJ Touchaei, N Manavizadeh IEEE Transactions on Electron Devices 64 (1), 306-311, 2016 | 21 | 2016 |
| Non-Quasi-Static Intrinsic GaN-HEMT Model BJ Touchaei, M Shalchian IEEE Transactions on Electron Devices 69 (12), 6594-6601, 2022 | 7 | 2022 |
| Impact of scaling voltage and size on the performance of side-contacted field effect diode BJ Touchaei, N Manavizadeh Superlattices and Microstructures 117, 406-412, 2018 | 4 | 2018 |
| Modeling GaN-HEMT Electrostatic Band Diagram under full depletion approximation BJ Touchaei, M Shalchian 2023 5th Iranian International Conference on Microelectronics (IICM), 134-138, 2023 | 1 | 2023 |
| Capacitance–resistance modeling of an inverter based on a nanoscale side-contacted field-effect diode with an overshoot suppression approach BJ Touchaei, T Ghafouri, N Manavizadeh, F Raissi, MA Zeidabadi Journal of Computational Electronics 20, 1666-1675, 2021 | 1 | 2021 |
| Rigorous Characteristics of Dual-material Gate Nanoscale S-FED BJ Touchaei, N Manavizadeh 25th Iranian Conference on Electrical Engineering (ICEE2017), 2017 | 1 | 2017 |
| A compact Non-Quasi-Static small-signal model for GaN HEMT BJ Touchaei, M Shalchian Microelectronics Journal, 106199, 2024 | | 2024 |
| Voltage and size scalability of Side-contacted Field Effect Diode BJ Touchaei, N Manavizadeh, E Mohammadi European Materials Research Society EMRS 2017-Spring Meeting; 05/2017, 2017 | | 2017 |
Negin Manavizadeh (ORCID:0000-00...Associate Professor of Electrical Engineering, K. N. Toosi University of TechnologyDirección de correo verificada de kntu.ac.ir
