Wide band gap ferromagnetic semiconductors and oxides SJ Pearton, CR Abernathy, ME Overberg, GT Thaler, DP Norton, ...
Journal of Applied Physics 93 (1), 1-13, 2003
1213 2003 Advances in wide bandgap materials for semiconductor spintronics SJ Pearton, CR Abernathy, DP Norton, AF Hebard, YD Park, LA Boatner, ...
Materials Science and Engineering: R: Reports 40 (4), 137-168, 2003
566 2003 Magnetic properties of n -GaMnN thin films GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 80 (21), 3964-3966, 2002
451 2002 Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN ME Overberg, CR Abernathy, SJ Pearton, NA Theodoropoulou, ...
Applied Physics Letters 79 (9), 1312-1314, 2001
384 2001 Magnetic and structural properties of Mn-implanted GaN N Theodoropoulou, AF Hebard, ME Overberg, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 78 (22), 3475-3477, 2001
357 2001 Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers SR Lee, AM West, AA Allerman, KE Waldrip, DM Follstaedt, PP Provencio, ...
Applied Physics Letters 86 (24), 241904, 2005
353 2005 Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn) P: C N Theodoropoulou, AF Hebard, ME Overberg, CR Abernathy, SJ Pearton, ...
Physical review letters 89 (10), 107203, 2002
287 2002 Effect of temperature on metal–oxide–semiconductor field-effect transistors F Ren, M Hong, SNG Chu, MA Marcus, MJ Schurman, A Baca, SJ Pearton, ...
Applied Physics Letters 73 (26), 3893-3895, 1998
285 1998 1.54‐μm photoluminescence from Er‐implanted GaN and AlN RG Wilson, RN Schwartz, CR Abernathy, SJ Pearton, N Newman, ...
Applied Physics Letters 65 (8), 992-994, 1994
274 1994 Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy CR Abernathy, SJ Pearton, R Caruso, F Ren, J Kovalchik
Applied Physics Letters 55 (17), 1750-1752, 1989
266 1989 Wet chemical etching of AlN JR Mileham, SJ Pearton, CR Abernathy, JD MacKenzie, RJ Shul, ...
Applied physics letters 67 (8), 1119-1121, 1995
237 1995 Influence of MgO and passivation on AlGaN/GaN high-electron-mobility transistors B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ...
Applied Physics Letters 80 (9), 1661-1663, 2002
222 2002 Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN SJ Pearton, CR Abernathy, F Ren
Applied physics letters 64 (17), 2294-2296, 1994
221 1994 Wide bandgap GaN-based semiconductors for spintronics SJ Pearton, CR Abernathy, GT Thaler, RM Frazier, DP Norton, F Ren, ...
Journal of Physics: Condensed Matter 16 (7), R209, 2004
196 2004 Gallium nitride processing for electronics, sensors and spintronics SJ Pearton, CR Abernathy, F Ren
Springer Science & Business Media, 2006
190 2006 Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy SJ Pearton, CR Abernathy, F Ren, JR Lothian, PW Wisk, A Katz
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 11 (4 …, 1993
181 * 1993 CCl 4 doping of GaN grown by metalorganic molecular beam epitaxyCR Abernathy, JD MacKenzie, SJ Pearton, WS Hobson
Applied physics letters 66 (15), 1969-1971, 1995
179 * 1995 AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using as the gate oxide and surface passivation R Mehandru, B Luo, J Kim, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Applied physics letters 82 (15), 2530-2532, 2003
175 2003 High-density plasma etching of compound semiconductors RJ Shul, GB McClellan, RD Briggs, DJ Rieger, SJ Pearton, CR Abernathy, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 15 (3 …, 1997
174 1997 High temperature electron cyclotron resonance etching of GaN, InN, and AlN RJ Shul, SP Kilcoyne, M Hagerott Crawford, JE Parmeter, CB Vartuli, ...
Applied physics letters 66 (14), 1761-1763, 1995
169 1995