Strong spin-photon coupling in silicon N Samkharadze, G Zheng, N Kalhor, D Brousse, A Sammak, UC Mendes, ...
Science 359 (6380), 1123-1127, 2018
189 2018 Deep vertical etching of silicon wafers using a hydrogenation-assisted reactive ion etching A Sammak, S Azimi, N Izadi, BK Hosseinieh, S Mohajerzadeh
Journal of microelectromechanical systems 16 (4), 912-918, 2007
67 2007 Gate-controlled quantum dots and superconductivity in planar germanium NW Hendrickx, DP Franke, A Sammak, M Kouwenhoven, D Sabbagh, ...
Nature communications 9 (1), 1-7, 2018
58 2018 Fast two-qubit logic with holes in germanium NW Hendrickx, DP Franke, A Sammak, G Scappucci, M Veldhorst
Nature 577 (7791), 487-491, 2020
54 2020 Robust UV/VUV/EUV PureB photodiode detector technology with high CMOS compatibility LK Nanver, L Qi, V Mohammadi, KRM Mok, WB De Boer, N Golshani, ...
IEEE Journal of Selected Topics in Quantum Electronics 20 (6), 306-316, 2014
46 2014 Rapid gate-based spin read-out in silicon using an on-chip resonator G Zheng, N Samkharadze, ML Noordam, N Kalhor, D Brousse, A Sammak, ...
Nature nanotechnology 14 (8), 742-746, 2019
43 2019 Shallow and undoped germanium quantum wells: a playground for spin and hybrid quantum technology A Sammak, D Sabbagh, NW Hendrickx, M Lodari, B Paquelet Wuetz, ...
Advanced Functional Materials 29 (14), 1807613, 2019
28 2019 Germanium quantum-well josephson field-effect transistors and interferometers F Vigneau, R Mizokuchi, DC Zanuz, X Huang, S Tan, R Maurand, S Frolov, ...
Nano letters 19 (2), 1023-1027, 2019
27 2019 Quantum dot arrays in silicon and germanium WIL Lawrie, HGJ Eenink, NW Hendrickx, JM Boter, L Petit, SV Amitonov, ...
Applied Physics Letters 116 (8), 080501, 2020
25 2020 VUV/Low-Energy Electron Si Photodiodes With Postmetal 400 V Mohammadi, L Qi, N Golshani, CKR Mok, WB de Boer, A Sammak, ...
IEEE Electron Device Letters 34 (12), 1545-1547, 2013
24 2013 A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths A Sammak, M Aminian, L Qi, WB De Boer, E Charbon, LK Nanver
2011 International Electron Devices Meeting, 8.5. 1-8.5. 4, 2011
22 2011 Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices LK Nanver, A Sammak, V Mohammadi, KRC Mok, L Qi, A Šakić, ...
ECS Transactions 49 (1), 25, 2012
21 2012 A single-hole spin qubit NW Hendrickx, WIL Lawrie, L Petit, A Sammak, G Scappucci, M Veldhorst
Nature communications 11 (1), 1-6, 2020
16 * 2020 Light effective hole mass in undoped Ge/SiGe quantum wells M Lodari, A Tosato, D Sabbagh, MA Schubert, G Capellini, A Sammak, ...
Physical Review B 100 (4), 041304, 2019
16 2019 Ballistic supercurrent discretization and micrometer-long Josephson coupling in germanium NW Hendrickx, MLV Tagliaferri, M Kouwenhoven, R Li, DP Franke, ...
Physical Review B 99 (7), 075435, 2019
13 2019 Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration C Porret, AY Hikavyy, JFG Granados, S Baudot, A Vohra, B Kunert, ...
ECS Transactions 86 (7), 163, 2018
13 2018 A scalable Cryo-CMOS 2-to-20GHz digitally intensive controller for 4× 32 frequency multiplexed spin qubits/transmons in 22nm FinFET technology for quantum computers B Patra, JPG Van Dijk, S Subramanian, A Corna, X Xue, C Jeon, F Sheikh, ...
Proc. 2020 Int. Solid-State Circuits Conf, 304-306, 2020
11 2020 Merging standard CVD techniques for GaAs and Si epitaxial growth A Sammak, W De Boer, A Van den Bogaard, L Nanver
ECS Transactions 28 (5), 237, 2010
11 2010 Rapid high-fidelity gate-based spin read-out in silicon G Zheng, N Samkharadze, ML Noordam, N Kalhor, D Brousse, A Sammak, ...
arXiv preprint arXiv:1901.00687, 2019
9 2019 PureGaB p+ n Ge diodes grown in large windows to Si with a sub-300 nm transition region A Sammak, L Qi, WB de Boer, LK Nanver
Solid-state electronics 74, 126-133, 2012
9 2012 
Edoardo CharbonProfessor of Advanced Quantum Architectures, EPFLDirección de correo verificada de epfl.ch
