David Tremouilles

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Marise BAFLEURLAAS-CNRSDirección de correo verificada de ieee.org
Steven ThijsimecDirección de correo verificada de imec.be
Dimitri LintenImecDirección de correo verificada de imec.be
Guido Groesenekenimec and KU LeuvenDirección de correo verificada de imec.be
Mirko ScholzPrincipalEngineer ESD DevelopmentDirección de correo verificada de infineon.com
Natarajan IyerALLEGRO MICROSYSTEMSDirección de correo verificada de ALLEGROMICRO.COM
caignetuniversité de toulouseDirección de correo verificada de laas.fr
Vincent MortetInstitute of Physics, AS CR v.v.i.Dirección de correo verificada de fzu.cz
Frédéric RICHARDEAUCNRS Senior Scientist, Director of Research - Lab. LAPLACE - CNRS - University of Toulouse - FranceDirección de correo verificada de laplace.univ-tlse.fr
Andrew TaylorFZU – Institute of Physics of the Czech Academy of SciencesDirección de correo verificada de fzu.cz
Patrick AustinLAAS CNRS TOULOUSEDirección de correo verificada de laas.fr
Harald GossnerIntelDirección de correo verificada de intel.com
Robert PLANAASSYSTEMDirección de correo verificada de assystem.com
George PapaioannouUniversity of Athens, Solid State Physics SectionDirección de correo verificada de phys.uoa.gr
Otakar FrankHead of the Department of electrochemical materials, J.Heyrovsky Institute of Physical ChemistryDirección de correo verificada de jh-inst.cas.cz
Gaudenzio MeneghessoUniversity of Padova, Dept. of Information EngineeringDirección de correo verificada de dei.unipd.it
Dominique TournierPower Electronics ExpertDirección de correo verificada de usicpower.com
Jonathan BorremansCTO at SpectricityDirección de correo verificada de spectricity.com
Chaudret BrunoDirecteur de Recherche CNRS, LPCNO Université de Toulouse INSA-CNRS-UPSDirección de correo verificada de insa-toulouse.fr
Soltani AliAssociate professorDirección de correo verificada de univ-lille.fr

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David Tremouilles

CNRS research Fellow, LAAS University of Toulouse

Dirección de correo verificada de laas.fr

ESD reliability nanotechnologies


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Design methodology for MuGFET ESD protection devices S Thijs, D Linten, DE Trémouilles US Patent 7,923,266, 2011	196	2011
Insight into boron-doped diamond Raman spectra characteristic features V Mortet, ZV Živcová, A Taylor, O Frank, P Hubík, D Trémouilles, F Jomard, ... Carbon 115, 279-284, 2017	109	2017
Analysis of heavily boron-doped diamond Raman spectrum V Mortet, A Taylor, ZV Živcová, D Machon, O Frank, P Hubík, ... Diamond and Related Materials 88, 163-166, 2018	67	2018
Analysis and compact modeling of a vertical grounded-base npn bipolar transistor used as ESD protection in a smart power technology G Bertrand, C Delage, M Bafleur, N Nolhier, JM Dorkel, Q Nguyen, ... IEEE Journal of Solid-State Circuits 36 (9), 1373-1381, 2001	53	2001
T-diodes-a novel plug-and-play wideband RF circuit ESD protection methodology D Linten, S Thijs, J Borremans, M Dehan, D Tremouilles, M Scholz, ... 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007	51	2007
Calibrated wafer-level HBM measurements for quasi-static and transient device analysis M Scholz, S Thijs, D Linten, D Tremouilles, M Sawada, T Nakaei, ... 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007	50	2007
Size effect on properties of varistors made from zinc oxide nanoparticles through low temperature spark plasma sintering LS Macary, ML Kahn, C Estournès, P Fau, D Trémouilles, M Bafleur, ... Advanced Functional Materials 19 (11), 1775-1783, 2009	42*	2009
Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation F Boige, F Richardeau, D Trémouilles, S Lefebvre, G Guibaud Microelectronics Reliability 76, 500-506, 2017	36	2017
Physical origin of the gate current surge during short-circuit operation of SiC MOSFET F Boige, D Trémouilles, F Richardeau IEEE Electron Device Letters 40 (5), 666-669, 2019	35	2019
Understanding the optimization of sub-45nm FinFET devices for ESD applications D Tremouilles, S Thijs, C Russ, J Schneider, C Duvvury, N Collaert, ... 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007	34	2007
Transient voltage overshoot in TLP testing—Real or artifact? D Tremouilles, S Thijs, P Roussel, MI Natarajan, V Vassilev, ... 2005 Electrical Overstress/Electrostatic Discharge Symposium, 1-9, 2005	34	2005
Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation N Monnereau, F Caignet, D Tremouilles, N Nolhier, M Bafleur Microelectronics Reliability 53 (2), 221-228, 2013	33	2013
Next generation bulk FinFET devices and their benefits for ESD robustness A Griffoni, S Thijs, C Russ, D Trémouilles, D Linten, M Scholz, N Collaert, ... 2009 31st EOS/ESD Symposium, 1-10, 2009	32	2009
Behavioral-modeling methodology to predict Electrostatic-Discharge susceptibility failures at system level: An IBIS improvement N Monnereau, F Caignet, N Nolhier, D Trémouilles, M Bafleur 10th International Symposium on Electromagnetic Compatibility, 457-463, 2011	29	2011
Investigation of modeling system ESD failure and probability using IBIS ESD models N Monnereau, F Caignet, N Nolhier, M Bafleur, D Tremouilles IEEE Transactions on Device and Materials Reliability 12 (4), 599-606, 2012	28	2012
Design methodology of FinFET devices that meet IC-Level HBM ESD targets S Thijs, C Russ, D Tremouilles, A Griffoni, D Linten, M Scholz, N Collaert, ... EOS/ESD 2008-2008 30th Electrical Overstress/Electrostatic Discharge …, 2008	24	2008
Electronic circuit and method of manufacturing an electronic circuit C Russ, D Trémouilles, S Thijs US Patent 7,687,859, 2010	23	2010
Backside localization of current leakage faults using thermal laser stimulation R Desplats, F Beaudoin, P Perdu, P Poirier, D Trémouilles, M Bafleur, ... Microelectronics Reliability 41 (9-10), 1539-1544, 2001	22	2001
A system-level electrostatic-discharge-protection modeling methodology for time-domain analysis N Monnereau, F Caignet, D Tremouilles, N Nolhier, M Bafleur IEEE transactions on electromagnetic compatibility 55 (1), 45-57, 2012	20	2012
Characterization and optimization of sub-32-nm FinFET devices for ESD applications S Thijs, D Tremouilles, C Russ, A Griffoni, N Collaert, R Rooyackers, ... IEEE transactions on electron devices 55 (12), 3507-3516, 2008	20	2008

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