Nucleation limited switching (NLS) model for HfO2-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics N Gong, X Sun, H Jiang, KS Chang-Liao, Q Xia, TP Ma
Applied Physics Letters 112 (26), 2018
102 2018 Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method X Sun, OI Saadat, KS Chang-Liao, T Palacios, S Cui, TP Ma
Applied Physics Letters 102 (10), 2013
94 2013 Structural and electrical characteristics of HfO2 films fabricated by pulsed laser deposition H Ikeda, S Goto, K Honda, M Sakashita, A Sakai, S Zaima, Y Yasuda
Japanese journal of applied physics 41 (4S), 2476, 2002
52 2002 Charge-Trapping-Type Flash Memory Device With Stacked High- Charge-Trapping Layer PH Tsai, KS Chang-Liao, TC Liu, TK Wang, PJ Tzeng, CH Lin, LS Lee, ...
IEEE electron device letters 30 (7), 775-777, 2009
48 2009 Novel SONOS-type nonvolatile memory device with optimal Al doping in HfAlO charge-trapping layer PH Tsai, KS Chang-Liao, CY Liu, TK Wang, PJ Tzeng, CH Lin, LS Lee, ...
IEEE electron device letters 29 (3), 265-268, 2008
46 2008 Twin thin-film transistor nonvolatile memory with an indium–gallium–zinc–oxide floating gate MF Hung, YC Wu, JJ Chang, KS Chang-Liao
IEEE Electron Device Letters 34 (1), 75-77, 2012
40 2012 Improved Electrical Characteristics of Ge pMOSFETs With ZrO2 /HfO2 Stack Gate Dielectric CC Li, KS Chang-Liao, WF Chi, MC Li, TC Chen, TH Su, YW Chang, ...
IEEE Electron Device Letters 37 (1), 12-15, 2015
38 2015 Monitoring the moisture-related degradation of ethylene propylene rubber cable by electrical and SEM methods YT Hsu, KS Chang-Liao, TK Wang, CT Kuo
Polymer Degradation and Stability 91 (10), 2357-2364, 2006
38 2006 Record-high 121/62 μA/μm on-currents 3D stacked epi-like Si FETs with and without metal back gate CC Yang, SH Chen, JM Shieh, WH Huang, TY Hsieh, CH Shen, TT Wu, ...
2013 IEEE International Electron Devices Meeting, 29.6. 1-29.6. 4, 2013
37 2013 Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in Interfacial Layer Formed by In Situ Desorption CC Li, KS Chang-Liao, LJ Liu, TM Lee, CH Fu, TC Chen, JW Cheng, ...
IEEE electron device letters 35 (5), 509-511, 2014
35 2014 Depth profiling of border traps in MOSFET with high-$ kappa $ gate dielectric by charge-pumping technique CY Lu, KS Chang-Liao, PH Tsai, TK Wang
IEEE electron device letters 27 (10), 859-862, 2006
35 2006 A higher-k tetragonal HfO2 formed by chlorine plasma treatment at interfacial layer for metal-oxide-semiconductor devices CH Fu, KS Chang-Liao, CC Li, ZH Ye, FM Hsu, TK Wang, YJ Lee, MJ Tsai
Applied Physics Letters 101 (3), 2012
30 2012 An Ultralow EOT Ge MOS Device With Tetragonal HfO2 and High Quality Hfx Gey O Interfacial Layer CH Fu, KS Chang-Liao, LJ Liu, CC Li, TC Chen, JW Cheng, CC Lu
IEEE Transactions on Electron Devices 61 (8), 2662-2667, 2014
28 2014 Correlation between mechanical and electrical properties for assessing the degradation of ethylene propylene rubber cables used in nuclear power plants YT Hsu, KS Chang-Liao, TK Wang, CT Kuo
Polymer degradation and stability 92 (7), 1297-1303, 2007
28 2007 A study of Cu/Low-k stress-induced voiding at via bottom and its microstructure effect RCJ Wang, CC Lee, LD Chen, K Wu, KS Chang-Liao
Microelectronics Reliability 46 (9-11), 1673-1678, 2006
27 2006 A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric CH Fu, KS Chang-Liao, YA Chang, YY Hsu, TH Tzeng, TK Wang, ...
Microelectronic engineering 88 (7), 1309-1311, 2011
26 2011 Current-conduction and charge trapping properties due to bulk nitrogen in HfOxNy gate dielectric of metal-oxide-semiconductor devices CL Cheng, KS Chang-Liao, CH Huang, TK Wang
Applied Physics Letters 86 (21), 2005
25 2005 Electrical conduction and TDDB reliability characterization for low-k SiCO dielectric in Cu interconnects RCJ Wang, KS Chang-Liao, TK Wang, MN Chang, CS Wang, CH Lin, ...
Thin Solid Films 517 (3), 1230-1233, 2008
23 2008 Correlation between nitrogen concentration profile and infrared spectroscopy in silicon dioxide KS Chang-Liao, HC Lai
Applied physics letters 72 (18), 2280-2282, 1998
23 1998 High performance phototransistors based on single crystalline perylene-tetracarboxylic-dianhydride nanoparticle LN Nguyen, S Kumar Pradhan, CN Yen, MC Lin, CH Chen, CS Wu, ...
Applied Physics Letters 103 (18), 2013
22 2013