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Majeed A Foad
Majeed A Foad
Conservia Prime Technologies
Verified email at conserviaprime.com
Title
Cited by
Cited by
Year
Method for conformal plasma immersed ion implantation assisted by atomic layer deposition
H Hanawa, SM Cho, MA Foad
US Patent 8,709,924, 2014
4892014
Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls
D Choi, DH Lee, T Poon, M Vellaikal, P Porshnev, M Foad
US Patent 8,642,128, 2014
4312014
Removal of surface dopants from a substrate
K Ramaswamy, KS Collins, B Gallo, H Hanawa, MA Foad, MA Hilkene, ...
US Patent 7,989,329, 2011
4262011
Mechanism of Boron Diffusion in Silicon: An Ab Initio and Kinetic Monte Carlo Study
B Sadigh, TJ Lenosky, SK Theiss, MJ Caturla, TD de la Rubia, MA Foad
Physical review letters 83 (21), 4341, 1999
2421999
Dry photoresist stripping process and apparatus
SM Cho, MA Foad
US Patent App. 12/001,472, 2008
2012008
Chamber for processing hard disk drive substrates
MA Foad, MA Hilkene, PI Porshnev, JA Marin, MD Scotney-Castle
US Patent App. 12/955,619, 2011
1602011
Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs
G Timp, A Agarwal, FH Baumann, T Boone, M Buonanno, R Cirelli, ...
International Electron Devices Meeting. IEDM Technical Digest, 930-932, 1997
1181997
Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition
H Hanawa, SM Cho, MA Foad
US Patent App. 12/028,423, 2009
822009
Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
C Beasley, R Hofmann, M Foad, T Michaelson
US Patent 9,354,508, 2016
722016
Boron ion sources for ion implantation apparatus
MA Foad
US Patent 5,977,552, 1999
711999
Large enhancement of boron solubility in silicon due to biaxial stress
B Sadigh, TJ Lenosky, MJ Caturla, AA Quong, LX Benedict, ...
Applied physics letters 80 (25), 4738-4740, 2002
622002
Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal
Y Ma, KZ Ahmed, KL Cunningham, RC McIntosh, AJ Mayur, H Liang, ...
US Patent 7,078,302, 2006
612006
CH4/H2: A universal reactive ion etch for II‐VI semiconductors?
MA Foad, CDW Wilkinson, C Dunscomb, RH Williams
Applied physics letters 60 (20), 2531-2533, 1992
601992
Raman scattering of coupled longitudinal optical phonon‐plasmon modes in dry etched n+‐GaAs
PD Wang, MA Foad, CM Sotomayor‐Torres, S Thoms, M Watt, R Cheung, ...
Journal of applied physics 71 (8), 3754-3759, 1992
601992
Optimizing boron junctions through point defect and stress engineering using carbon and germanium co-implants
V Moroz, YS Oh, D Pramanik, H Graoui, MA Foad
Applied Physics Letters 87 (5), 2005
572005
Model for conductance in dry‐etch damaged n‐GaAs structures
M Rahman, NP Johnson, MA Foad, AR Long, MC Holland, ...
Applied physics letters 61 (19), 2335-2337, 1992
531992
Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans
JA Sharp, NEB Cowern, RP Webb, KJ Kirkby, D Giubertoni, S Gennaro, ...
Applied physics letters 89 (19), 2006
502006
Extreme ultraviolet capping layer and method of manufacturing and lithography thereof
C Beasley, R Hofmann, MA Foad, R Beckstrom III
US Patent 9,739,913, 2017
472017
New technique for dry etch damage assessment of semiconductors
MA Foad, S Thoms, CDW Wilkinson
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
471993
Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
R Hofmann, C Beasley, M Foad
US Patent App. 14/139,415, 2014
462014
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