The influence of deposition temperature and annealing temperature on Ga-doped SnO2 films prepared by direct current magnetron sputtering HP Dang, QH Luc, T Le
Journal of Alloys and Compounds 687, 1012-1020, 2016
51 2016 Electrical Characteristics of n, p-In0.53 Ga0.47 As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer QH Luc, EY Chang, HD Trinh, YC Lin, HQ Nguyen, YY Wong, HB Do, ...
IEEE Transactions on electron devices 61 (8), 2774-2778, 2014
45 2014 High-performance normally-OFF GaN MIS-HEMTs using hybrid ferroelectric charge trap gate stack (FEG-HEMT) for power device applications CH Wu, PC Han, SC Liu, TE Hsieh, FJ Lumbantoruan, YH Ho, JY Chen, ...
IEEE Electron Device Letters 39 (7), 991-994, 2018
38 2018 Normally-OFF GaN MIS-HEMT With F− Doped Gate Insulator Using Standard Ion Implantation CH Wu, PC Han, QH Luc, CY Hsu, TE Hsieh, HC Wang, YK Lin, ...
IEEE Journal of the Electron Devices Society 6, 893-899, 2018
35 2018 Plasma Enhanced Atomic Layer Deposition Passivated HfO2 /AlN/In0.53 Ga0.47 As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface … QH Luc, HB Do, MTH Ha, CC Hu, YC Lin, EY Chang
IEEE Electron Device Letters 36 (12), 1277-1280, 2015
35 2015 Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device Applications CH Wu, JY Chen, PC Han, MW Lee, KS Yang, HC Wang, PC Chang, ...
IEEE Transactions on Electron Devices 66 (8), 3441-3446, 2019
32 2019 High-Performance GaN MOSHEMTs Fabricated With ALD Al2 O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications YK Lin, S Noda, CC Huang, HC Lo, CH Wu, QH Luc, PC Chang, HT Hsu, ...
IEEE Electron Device Letters 38 (6), 771-774, 2017
32 2017 A study of structural, electrical, and optical properties of p-type Zn-doped SnO2 films versus deposition and annealing temperature T Le, HP Dang, QH Luc
Journal of Physics D: Applied Physics 50 (14), 145102, 2017
28 2017 Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2 /In0.53 Ga0.47 As Metal–Oxide–Semiconductor Field-Effect … QH Luc, SP Cheng, PC Chang, HB Do, JH Chen, MTH Ha, SH Huynh, ...
IEEE Electron Device Letters 37 (8), 974-977, 2016
27 2016 Demonstration of Highly Robust 5 nm Hf0. 5Zr0. 5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality YK Liang, JS Wu, CY Teng, HL Ko, QH Luc, CJ Su, EY Chang, CH Lin
IEEE Electron Device Letters 42 (9), 1299-1302, 2021
25 2021 AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2 O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants HC Wang, TE Hsieh, YC Lin, QH Luc, SC Liu, CH Wu, CF Dee, BY Majlis, ...
IEEE Journal of the Electron Devices Society 6, 110-115, 2017
25 2017 Studying the influence of deposition temperature and nitrogen contents on the structural, optical, and electrical properties of N-doped SnO2 films prepared by direct current … TT Nguyen, HP Dang, QH Luc, T Le
Ceramics International 45 (7), 9147-9156, 2019
23 2019 First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5 Zr0.5 O2 Ferroelectric Gate Stack QH Luc, CC Fan-Chiang, SH Huynh, P Huang, HB Do, MTH Ha, YD Jin, ...
2018 IEEE Symposium on VLSI Technology, 47-48, 2018
22 2018 In0.53 Ga0.47 As FinFET and GAA-FET With Remote-Plasma Treatment QH Luc, KS Yang, JW Lin, CC Chang, HB Do, SH Huynh, MTH Ha, ...
IEEE Electron Device Letters 39 (3), 339-342, 2018
20 2018 Electrical Characteristics of MOSCAPs and the Effect of Postdeposition Annealing Temperatures HD Trinh, YC Lin, EY Chang, CT Lee, SY Wang, HQ Nguyen, YS Chiu, ...
IEEE transactions on electron devices 60 (5), 1555-1560, 2013
20 2013 AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications YK Lin, S Noda, HC Lo, SC Liu, CH Wu, YY Wong, QH Luc, PC Chang, ...
IEEE Electron Device Letters 37 (11), 1395-1398, 2016
19 2016 The optimum fabrication condition of p-type antimony tin oxide thin films prepared by DC magnetron sputtering HP Dang, QH Luc, T Le, VH Le
Journal of Nanomaterials 2016, 2016
19 2016 Eliminating the charge compensation effect in Ga-doped SnO2 films by N doping HP Dang, QH Luc, TT Nguyen, T Le
Journal of Alloys and Compounds 776, 276-286, 2019
18 2019 Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition SH Huynh, MTH Ha, HB Do, QH Luc, HW Yu, EY Chang
Applied Physics Letters 109 (10), 2016
17 2016 Effect of Sn-substituted Ga and In dopant content on the structural, electrical, and optical properties of p-type X-doped SnO2 (X= Ga and In) films: Testing the photoelectronic … T Le, HP Dang, AQ Duong, QH Luc
Journal of Photochemistry and Photobiology A: Chemistry 376, 88-99, 2019
15 2019