| Full-color single nanowire pixels for projection displays YH Ra, R Wang, SY Woo, M Djavid, SM Sadaf, J Lee, GA Botton, Z Mi Nano Letters 16 (7), 4608-4615, 2016 | 183 | 2016 |
| Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon R Wang, HPT Nguyen, AT Connie, J Lee, I Shih, Z Mi Optics express 22 (107), A1768-A1775, 2014 | 103 | 2014 |
| High efficiency, full-color AlInGaN quaternary nanowire light emitting diodes with spontaneous core-shell structures on Si R Wang, X Liu, I Shih, Z Mi Applied Physics Letters 106 (26), 2015 | 53 | 2015 |
| Epitaxial growth and characterization of AlInN-based core-shell nanowire light emitting diodes operating in the ultraviolet spectrum RT Velpula, B Jain, MR Philip, HD Nguyen, R Wang, HPT Nguyen Scientific reports 10 (1), 2547, 2020 | 30 | 2020 |
| High mobility single-crystalline-like germanium thin films on flexible, inexpensive substrates R Wang, SN Sambandam, G Majkic, E Galstyan, V Selvamanickam Thin Solid Films 527, 9-15, 2013 | 27 | 2013 |
| Submicron full‐color LED pixels for microdisplays and micro‐LED main displays X Liu, Y Wu, Y Malhotra, Y Sun, YH Ra, R Wang, M Stevenson, ... Journal of the Society for Information Display 28 (5), 410-417, 2020 | 25 | 2020 |
| Optically invariant InGaN nanowire light-emitting diodes on flexible substrates under mechanical manipulation M Asad, R Wang, YH Ra, P Gavirneni, Z Mi, WS Wong npj Flexible Electronics 3 (1), 16, 2019 | 24 | 2019 |
| Enhancing the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with photonic crystal structures B Jain, RT Velpula, M Tumuna, HQT Bui, J Jude, TT Pham, AV Hoang, ... Optics Express 28 (15), 22908-22918, 2020 | 21 | 2020 |
| Decoupling strategy for enhanced syngas generation from photoelectrochemical CO2 reduction S Chu, P Ou, RT Rashid, P Ghamari, R Wang, HN Tran, S Zhao, H Zhang, ... iscience 23 (8), 2020 | 18 | 2020 |
| Molecular beam epitaxy of iii-nitride nanowires: Emerging applications from deep-ultraviolet light emitters and micro-LEDs to artificial photosynthesis S Zhao, R Wang, S Chu, Z Mi IEEE Nanotechnology Magazine 13 (2), 6-16, 2019 | 18 | 2019 |
| Tunable, full-color nanowire light emitting diode arrays monolithically integrated on Si and sapphire R Wang, YH Ra, Y Wu, S Zhao, HPT Nguyen, I Shih, Z Mi Gallium Nitride Materials and Devices XI 9748, 165-173, 2016 | 17 | 2016 |
| Erbium-ytterbium co-doped aluminium oxide waveguide amplifiers fabricated by reactive co-sputtering and wet chemical etching DB Bonneville, HC Frankis, R Wang, JDB Bradley Optics Express 28 (20), 30130-30140, 2020 | 16 | 2020 |
| High efficiency visible and ultraviolet nanowire emitters Z Mi, Z Songrui, R Wang US Patent 10,290,767, 2019 | 14 | 2019 |
| Effective geometric size and bond-loss effect in nanoelasticity of GaN nanowires RJ Wang, CY Wang, YT Feng International Journal of Mechanical Sciences 130, 267-273, 2017 | 10 | 2017 |
| An SEM-based nanomanipulation system for multi-physical characterization of single InGaN/GaN nanowires J Qu, R Wang, P Pan, L Du, Z Mi, Y Sun, X Liu Proceedings of the 2020 IEEE/RSJ International Conference on Intelligent …, 2019 | 9 | 2019 |
| Mechanical responses of a-axis GaN nanowires under axial loads RJ Wang, CY Wang, YT Feng, C Tang Nanotechnology 29 (9), 095707, 2018 | 9 | 2018 |
| Prefabricated metal Nanorods on Biaxially-textured templates on flexible substrates for REBCO superconductors ND Khatri, G Majkic, R Wang, A Sundaram, S Sambandam, ... IEEE transactions on applied superconductivity 23 (3), 6600705-6600705, 2012 | 8 | 2012 |
| Polarization-engineered p-type electron-blocking-layer-free III-nitride deep-ultraviolet light-emitting diodes for enhanced carrier transport RT Velpula, B Jain, TR Lenka, R Wang, HPT Nguyen Journal of Electronic Materials 51 (2), 838-846, 2022 | 6 | 2022 |
| Dilute-antimonide GaSbN/GaN dots-in-wire heterostructures grown by molecular beam epitaxy: Structural and optical properties FA Chowdhury, ML Trudeau, R Wang, H Guo, Z Mi Applied Physics Letters 118 (1), 2021 | 6 | 2021 |
| Monolithically integrated InGaN/GaN quantum nanowire devices Z Mi, YH Ra, R Wang US Patent 10,734,545, 2020 | 6 | 2020 |
