600-V Normally Off Z Tang, Q Jiang, Y Lu, S Huang, S Yang, X Tang, KJ Chen
IEEE Electron Device Letters 34 (11), 1373-1375, 2013
277 2013 High-Quality Interface in S Yang, Z Tang, KY Wong, YS Lin, C Liu, Y Lu, S Huang, KJ Chen
IEEE Electron Device Letters 34 (12), 1497-1499, 2013
185 2013 Mechanism of PEALD-grown AlN passivation for AlGaN/GaN HEMTs: Compensation of interface traps by polarization charges S Huang, Q Jiang, S Yang, Z Tang, KJ Chen
IEEE electron device letters 34 (2), 193-195, 2013
136 2013 Al2 O3 /AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer S Liu, S Yang, Z Tang, Q Jiang, C Liu, M Wang, KJ Chen
IEEE electron device letters 35 (7), 723-725, 2014
127 2014 High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation Z Tang, S Huang, Q Jiang, S Liu, C Liu, KJ Chen
IEEE electron device letters 34 (3), 366-368, 2013
112 2013 Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer S Liu, S Yang, Z Tang, Q Jiang, C Liu, M Wang, B Shen, KJ Chen
Applied Physics Letters 106 (5), 2015
107 2015 Mapping of interface traps in high-performance Al2 O3 /AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques S Yang, Z Tang, KY Wong, YS Lin, Y Lu, S Huang, KJ Chen
2013 IEEE International Electron Devices Meeting, 6.3. 1-6.3. 4, 2013
90 2013 Characterization of V T ‐instability in enhancement‐mode Al2 O3 ‐AlGaN/GaN MIS‐HEMTs Y Lu, S Yang, Q Jiang, Z Tang, B Li, KJ Chen
physica status solidi (c) 10 (11), 1397-1400, 2013
89 2013 Thermally stable enhancement-mode GaN metal-isolator-semiconductor high-electron-mobility transistor with partially recessed fluorine-implanted barrier C Liu, S Yang, S Liu, Z Tang, H Wang, Q Jiang, KJ Chen
IEEE Electron Device Letters 36 (4), 318-320, 2015
70 2015 Influence of AlN passivation on dynamic ON-resistance and electric field distribution in high-voltage AlGaN/GaN-on-Si HEMTs Z Tang, S Huang, X Tang, B Li, KJ Chen
IEEE Transactions on Electron Devices 61 (8), 2785-2792, 2014
63 2014 High- S Huang, K Wei, G Liu, Y Zheng, X Wang, L Pang, X Kong, X Liu, Z Tang, ...
IEEE electron device letters 35 (3), 315-317, 2014
59 2014 Surface nitridation for improved dielectric/III‐nitride interfaces in GaN MIS‐HEMTs KJ Chen, S Yang, Z Tang, S Huang, Y Lu, Q Jiang, S Liu, C Liu, B Li
physica status solidi (a) 212 (5), 1059-1065, 2015
55 2015 Analytical modeling of capacitances for GaN HEMTs, including parasitic components A Zhang, L Zhang, Z Tang, X Cheng, Y Wang, KJ Chen, M Chan
IEEE Transactions on Electron Devices 61 (3), 755-761, 2014
53 2014 High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al2 O3 gate dielectric for high-performance normally-off GaN MIS-HEMTs S Huang, Q Jiang, K Wei, G Liu, J Zhang, X Wang, Y Zheng, B Sun, ...
2014 IEEE International Electron Devices Meeting, 17.4. 1-17.4. 4, 2014
51 2014 Substrate-coupled cross-talk effects on an AlGaN/GaN-on-Si smart power IC platform Q Jiang, Z Tang, C Zhou, S Yang, KJ Chen
IEEE Transactions on Electron Devices 61 (11), 3808-3813, 2014
44 2014 Thermally induced threshold voltage instability of III-nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes S Yang, S Liu, C Liu, Z Tang, Y Lu, KJ Chen
2014 IEEE International Electron Devices Meeting, 17.2. 1-17.2. 4, 2014
37 2014 Investigation of SiNx S Yang, Z Tang, M Hua, Z Zhang, J Wei, Y Lu, KJ Chen
IEEE Journal of the Electron Devices Society 8, 358-364, 2020
23 2020 GaN‐to‐Si vertical conduction mechanisms in AlGaN/GaN‐on‐Si lateral heterojunction FET structures S Yang, Q Jiang, B Li, Z Tang, KJ Chen
physica status solidi (c) 11 (3‐4), 949-952, 2014
23 2014 Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition Y Lu, Q Jiang, Z Tang, S Yang, C Liu, KJ Chen
Applied Physics Express 8 (6), 064101, 2015
22 2015 A high-voltage low-standby-power startup circuit using monolithically integrated E/D-mode AlGaN/GaN MIS-HEMTs Q Jiang, Z Tang, C Liu, Y Lu, KJ Chen
IEEE Transactions on Electron Devices 61 (3), 762-768, 2014
22 2014 
