High-throughput ion-implantation for low-cost high-efficiency silicon solar cells A Rohatgi, DL Meier, B McPherson, YW Ok, AD Upadhyaya, JH Lai, ...
Energy Procedia 15, 10-19, 2012
140 2012 Large area tunnel oxide passivated rear contact n ‐type Si solar cells with 21.2% efficiency Y Tao, V Upadhyaya, CW Chen, A Payne, EL Chang, A Upadhyaya, ...
Progress in Photovoltaics: Research and Applications 24 (6), 830-835, 2016
101 2016 Optimization of SiN AR coating for Si solar cells and modules through quantitative assessment of optical and efficiency loss mechanism MH Kang, K Ryu, A Upadhyaya, A Rohatgi
Progress in Photovoltaics: Research and Applications 19 (8), 983-990, 2011
60 2011 Chemical etching of boron-rich layer and its impact on high efficiency n-type silicon solar cells K Ryu, A Upadhyaya, HJ Song, CJ Choi, A Rohatgi, YW Ok
Applied Physics Letters 101 (7), 2012
54 2012 Ion-implanted and screen-printed large area 20% efficient N-type front junction Si solar cells YW Ok, AD Upadhyaya, Y Tao, F Zimbardi, K Ryu, MH Kang, A Rohatgi
Solar Energy Materials and Solar Cells 123, 92-96, 2014
53 2014 Passivated tunneling contacts to n-type wafer silicon and their implementation into high performance solar cells P Stradins, S Essig, W Nemeth, BG Lee, D Young, A Norman, Y Liu, ...
National Renewable Energy Lab.(NREL), Golden, CO (United States), 2014
51 2014 High-efficiency large-area rear passivated silicon solar cells with local Al-BSF and screen-printed contacts JH Lai, A Upadhyaya, S Ramanathan, A Das, K Tate, V Upadhyaya, ...
IEEE Journal of Photovoltaics 1 (1), 16-21, 2011
49 2011 Bulk lifetime and efficiency enhancement due to gettering and hydrogenation of defects during cast multicrystalline silicon solar cell fabrication M Sheoran, A Upadhyaya, A Rohatgi
Solid-State Electronics 52 (5), 612-617, 2008
47 2008 Fabrication and modeling of high-efficiency front junction n-type silicon solar cells with tunnel oxide passivating back contact A Rohatgi, B Rounsaville, YW Ok, AM Tam, F Zimbardi, AD Upadhyaya, ...
IEEE Journal of Photovoltaics 7 (5), 1236-1243, 2017
42 2017 Evaluation of a Silicon 90 Sr Betavoltaic Power Source J Dixon, A Rajan, S Bohlemann, D Coso, AD Upadhyaya, A Rohatgi, ...
Scientific reports 6 (1), 38182, 2016
37 2016 Fully Ion-Implanted and Screen-Printed 20.2% Efficient Front Junction Silicon Cells on 239 cm n-Type CZ Substrate Y Tao, YW Ok, F Zimbardi, AD Upadhyaya, JH Lai, S Ning, ...
IEEE Journal of Photovoltaics 4 (1), 58-63, 2013
36 2013 String ribbon silicon solar cells with 17.8% efficiency DS Kim, AM Gabor, V Yelunder, AD Upadhyaya, V Meemongkolkiat, ...
3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of …, 2003
35 2003 730 mV implied Voc enabled by tunnel oxide passivated contact with PECVD grown and crystallized n+ polycrystalline Si Y Tao, EL Chang, A Upadhyaya, B Roundaville, YW Ok, K Madani, ...
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 1-5, 2015
33 2015 Fully screen-printed bifacial large area 22.6% N-type Si solar cell with lightly doped ion-implanted boron emitter and tunnel oxide passivated rear contact YY Huang, YW Ok, K Madani, W Choi, AD Upadhyaya, VD Upadhyaya, ...
Solar energy materials and solar cells 214, 110585, 2020
32 2020 Ion-implanted screen-printed n-type solar cell with tunnel oxide passivated back contact AD Upadhyaya, YW Ok, E Chang, V Upadhyaya, K Madani, K Tate, ...
IEEE Journal of Photovoltaics 6 (1), 153-158, 2015
32 2015 Screen printed, large area bifacial N-type back junction silicon solar cells with selective phosphorus front surface field and boron doped poly-Si/SiOx passivated rear emitter YW Ok, AM Tam, YY Huang, V Yelundur, A Das, AM Payne, ...
Applied Physics Letters 113 (26), 2018
31 2018 Effect of the SiO2 interlayer properties with solid-source hydrogenation on passivated contact performance and surface passivation B Nemeth, SP Harvey, JV Li, DL Young, A Upadhyaya, V LaSalvia, ...
Energy Procedia 124, 295-301, 2017
31 2017 Modeling the potential of screen printed front junction CZ silicon solar cell with tunnel oxide passivated back contact CW Chen, M Hermle, J Benick, Y Tao, YW Ok, A Upadhyaya, AM Tam, ...
Progress in Photovoltaics: Research and Applications 25 (1), 49-57, 2017
27 2017 Dissolution of oxygen precipitate nuclei in n-type CZ-Si wafers to improve their material quality: Experimental results B Sopori, P Basnyat, S Devayajanam, T Tan, A Upadhyaya, K Tate, ...
IEEE Journal of Photovoltaics 7 (1), 97-103, 2016
25 2016 High efficiency large area n ‐type front junction silicon solar cells with boron emitter formed by screen printing technology K Ryu, A Upadhyaya, V Upadhyaya, A Rohatgi, YW Ok
Progress in Photovoltaics: Research and Applications 23 (1), 119-123, 2015
22 2015