The emergence and prospects of deep-ultraviolet light-emitting diode technologies M Kneissl, TY Seong, J Han, H Amano
nature photonics 13 (4), 233-244, 2019
947 2019 Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ...
Nature materials 5 (10), 810-816, 2006
843 * 2006 AlGaN/GaN quantum well ultraviolet light emitting diodes J Han, MH Crawford, RJ Shul, JJ Figiel, M Banas, L Zhang, YK Song, ...
Applied physics letters 73 (12), 1688-1690, 1998
346 1998 Graded band gap ohmic contact to p ‐ZnSe Y Fan, J Han, L He, J Saraie, RL Gunshor, M Hagerott, H Jeon, ...
Applied physics letters 61 (26), 3160-3162, 1992
312 1992 Stress evolution during metalorganic chemical vapor deposition of GaN S Hearne, E Chason, J Han, JA Floro, J Figiel, J Hunter, H Amano, ...
Applied Physics Letters 74 (3), 356-358, 1999
307 1999 The band-gap bowing of SR Lee, AF Wright, MH Crawford, GA Petersen, J Han, RM Biefeld
Applied physics letters 74 (22), 3344-3346, 1999
279 1999 Low-dislocation-density GaN from a single growth on a textured substrate CIH Ashby, CC Mitchell, J Han, NA Missert, PP Provencio, DM Follstaedt, ...
Applied Physics Letters 77 (20), 3233-3235, 2000
238 2000 Stress and defect control in GaN using low temperature interlayers H Amano, M Iwaya, T Kashima, M Katsuragawa, I Akasaki, J Han, ...
Japanese journal of applied physics 37 (12B), L1540, 1998
233 1998 Influence of MgO and B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ...
Applied Physics Letters 80 (9), 1661-1663, 2002
222 2002 Stress engineering during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors KE Waldrip, J Han, JJ Figiel, H Zhou, E Makarona, AV Nurmikko
Applied Physics Letters 78 (21), 3205-3207, 2001
221 2001 The effect of J Han, TB Ng, RM Biefeld, MH Crawford, DM Follstaedt
Applied physics letters 71 (21), 3114-3116, 1997
203 1997 Continuous-wave, room temperature, ridge waveguide green-blue diode laser A Salokatve, H Jeon, J Ding, M Hovinen, AV Nurmikko, DC Grillo, L He, ...
Electronics Letters 25 (29), 2192-2194, 1993
196 1993 III-Nitride based light emitting diodes and applications TY Seong, J Han, H Amano, H Morkoç
Springer, 2017
192 2017 Microstructure study of a degraded pseudomorphic separate confinement heterostructure blue‐green laser diode GC Hua, N Otsuka, DC Grillo, Y Fan, J Han, MD Ringle, RL Gunshor, ...
Applied physics letters 65 (11), 1331-1333, 1994
175 1994 Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy C Theodoropoulos, TJ Mountziaris, HK Moffat, J Han
Journal of crystal growth 217 (1-2), 65-81, 2000
173 2000 Mesoporous GaN for Photonic Engineering Highly Reflective GaN Mirrors as an Example C Zhang, SH Park, D Chen, DW Lin, W Xiong, HC Kuo, CF Lin, H Cao, ...
ACS photonics 2 (7), 980-986, 2015
161 2015 Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers J Han, KE Waldrip, SR Lee, JJ Figiel, SJ Hearne, GA Petersen, SM Myers
Applied Physics Letters 78 (1), 67-69, 2001
161 2001 Nanopores in GaN by electrochemical anodization in hydrofluoric acid: Formation and mechanism D Chen, H Xiao, J Han
Journal of Applied Physics 112 (6), 2012
157 2012 Brittle-ductile relaxation kinetics of strained AlGaN/GaN heterostructures SJ Hearne, J Han, SR Lee, JA Floro, DM Follstaedt, E Chason, IST Tsong
Applied Physics Letters 76 (12), 1534-1536, 2000
151 2000 Observation of the interfacial-field-induced weak antilocalization in InAs quantum structures GL Chen, J Han, TT Huang, S Datta, DB Janes
Physical Review B 47 (7), 4084, 1993
142 1993 
Arto NurmikkoProfessor of Engineering and Physics, Brown UniversityDirección de correo verificada de brown.edu
