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Eric A. G. Webster
Eric A. G. Webster
University of Edinburgh
Verified email at quantum-si.com
Title
Cited by
Cited by
Year
Scaleable single-photon avalanche diode structures in nanometer CMOS technology
JA Richardson, EAG Webster, LA Grant, RK Henderson
IEEE Transactions on Electron Devices 58 (7), 2028-2035, 2011
1752011
Single photon avalanche diode for CMOS circuits
EAG Webster, RK Henderson
US Patent 9,178,100, 2015
1652015
A high-performance single-photon avalanche diode in 130-nm CMOS imaging technology
EAG Webster, LA Grant, RK Henderson
IEEE Electron Device Letters 33 (11), 1589-1591, 2012
1362012
A single-photon avalanche diode in 90-nm CMOS imaging technology with 44% photon detection efficiency at 690 nm
EAG Webster, JA Richardson, LA Grant, D Renshaw, RK Henderson
IEEE Electron Device Letters 33 (5), 694-696, 2012
1292012
Back side illuminated single photon avalanche diode imaging sensor with high short wavelength detection efficiency
EAG Webster
US Patent 9,331,116, 2016
922016
Single photon avalanche diode imaging sensor for complementary metal oxide semiconductor stacked chip applications
EAG Webster
US Patent 9,312,401, 2016
892016
Stacked chip SPAD image sensor
EAG Webster, T Dai
US Patent 9,299,732, 2016
882016
Spad sensor circuit with biasing circuit
EAG Webster, RK Henderson
US Patent App. 14/150,346, 2014
832014
Method of fabricating a single photon avalanche diode imaging sensor
EAG Webster
US Patent 9,209,320, 2015
762015
Back side illuminated image sensor with guard ring region reflecting structure
EAG Webster
US Patent 9,685,576, 2017
652017
Real-time dynamic single-molecule protein sequencing on an integrated semiconductor device
BD Reed, MJ Meyer, V Abramzon, O Ad, O Ad, P Adcock, FR Ahmad, ...
Science 378 (6616), 186-192, 2022
572022
Enhanced back side illuminated near infrared image sensor
EAG Webster
US Patent 9,825,073, 2017
552017
Visible and infrared image sensor
EAG Webster, HE Rhodes, D Massetti
US Patent 9,806,122, 2017
532017
A 3 3, 5m pitch, 3-transistor single photon avalanche diode array with integrated 11V bias generation in 90nm CMOS technology
RK Henderson, EAG Webster, R Walker, JA Richardson, LA Grant
2010 International Electron Devices Meeting, 14.2. 1-14.2. 4, 2010
462010
A 1280 1080 4.2 m split-diode pixel hdr sensor in 110 nm bsi cmos process
T Willassen, J Solhusvik, R Johansson, S Yaghmai, H Rhodes, S Manabe, ...
Proceedings of the International Image Sensor Workshop, Vaals, The…, 2015
392015
Partitioned silicon photomultiplier with delay equalization
EAG Webster
US Patent 9,082,675, 2015
382015
Horizontal avalanche photodiode
G Chen, EAG Webster, D Mao, V Venezia, DH Tai
US Patent 9,881,963, 2018
352018
Per-pixel dark current spectroscopy measurement and analysis in CMOS image sensors
EAG Webster, RL Nicol, L Grant, D Renshaw
IEEE Transactions on electron devices 57 (9), 2176-2182, 2010
292010
A TCAD and spectroscopy study of dark count mechanisms in single-photon avalanche diodes
EAG Webster, RK Henderson
IEEE transactions on electron devices 60 (12), 4014-4019, 2013
272013
Transient single-photon avalanche diode operation, minority carrier effects, and bipolar latch up
EAG Webster, LA Grant, RK Henderson
IEEE transactions on electron devices 60 (3), 1188-1194, 2013
262013
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