| Influence of channel and gate engineering on the analog and RF performance of DG MOSFETs N Mohankumar, B Syamal, CK Sarkar IEEE transactions on Electron Devices 57 (4), 820-826, 2010 | 217 | 2010 |
| Subthreshold analog/RF performance enhancement of underlap DG FETs with high-k spacer for low power applications K Koley, A Dutta, B Syamal, SK Saha, CK Sarkar IEEE transactions on electron devices 60 (1), 63-69, 2012 | 67 | 2012 |
| Investigation of novel attributes of single halo dual-material double gate MOSFETs for analog/RF applications N Mohankumar, B Syamal, CK Sarkar Microelectronics Reliability 49 (12), 1491-1497, 2009 | 43 | 2009 |
| A compact model for generic MIS-HEMTs based on the unified 2DEG density expression J Zhang, B Syamal, X Zhou, S Arulkumaran, GI Ng IEEE Transactions on Electron Devices 61 (2), 314-323, 2014 | 41 | 2014 |
| A comprehensive compact model for GaN HEMTs, including quasi-steady-state and transient trap-charge effects B Syamal, X Zhou, SB Chiah, AM Jesudas, S Arulkumaran, GI Ng IEEE Transactions on Electron Devices 63 (4), 1478-1485, 2016 | 39 | 2016 |
| Subthreshold analog/RF performance of underlap DG FETs with asymmetric source/drain extensions K Koley, B Syamal, A Kundu, N Mohankumar, CK Sarkar Microelectronics Reliability 52 (11), 2572-2578, 2012 | 34 | 2012 |
| Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111) MJ Anand, GI Ng, S Arulkumaran, M Kumar, K Ranjan, S Vicknesh, ... Applied Physics Letters 106 (8), 2015 | 28 | 2015 |
| Distribution of trap energy level in AlGaN/GaN high-electron-mobility transistors on Si under ON-state stress MJ Anand, GI Ng, S Arulkumaran, B Syamal, X Zhou Applied Physics Express 8 (10), 104101, 2015 | 20 | 2015 |
| A surface potential based drain current model for asymmetric double gate MOSFETs P Dutta, B Syamal, N Mohankumar, CK Sarkar Solid-State Electronics 56 (1), 148-154, 2011 | 16 | 2011 |
| Effect of single HALO doped channel in tunnel FETs: A 2-D modeling study B Syamal, C Bose, CK Sarkar, N Mohankumar 2010 IEEE International Conference of Electron Devices and Solid-State …, 2010 | 14 | 2010 |
| GaN HEMT compact model for circuit simulation B Syamal, SB Chiah, X Zhou, A Ajaykumar, MJ Anand, GI Ng, ... 2015 IEEE International Conference on Electron Devices and Solid-State …, 2015 | 8 | 2015 |
| RF parameter extraction of Bulk FinFET: A non quasi static approach A Kundu, B Syamal, K Koley, CK Sarkar, N Mohankumar 2010 IEEE International Conference of Electron Devices and Solid-State …, 2010 | 8 | 2010 |
| Performance and optimisation of dual material gate short channel BULK MOSFETs for analogue/mixed signal applications N Mohankumar, B Syamal, CK Sarkar International journal of electronics 96 (6), 603-611, 2009 | 8 | 2009 |
| A 2‐D surface‐potential‐based threshold voltage model for short channel asymmetric heavily doped DG MOSFETs P Dutta, B Syamal, N Mohankumar, CK Sarkar International Journal of Numerical Modelling: Electronic Networks, Devices …, 2014 | 7 | 2014 |
| Analytical modeling of flicker and thermal noise in n-channel DG FinFETs S Pandit, B Syamal, CK Sarkar Solid-state electronics 63 (1), 177-183, 2011 | 6 | 2011 |
| Compact Fermi potential model for heterostructure HEMTs with rectangular quantum well A Ajaykumar, Z Xing, B Syamal, SB Chiah 2014 44th European Solid State Device Research Conference (ESSDERC), 266-269, 2014 | 5 | 2014 |
| Modeling of threshold voltage for undoped surrounding gate MOSFET: A Gaussian approach P Roy, B Syamal, N Mohankumar, CK Sarkar 2009 4th International Conference on Computers and Devices for Communication …, 2009 | 5 | 2009 |
| Quasi-2D Surface-Potential-Based Critical Length for Drift-Diffusion A Ajaykumar, X Zhou, SB Chiah, B Syamal IEEE Electron Device Letters 37 (8), 1051-1054, 2016 | 4 | 2016 |
| Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism X Zhou, J Zhang, B Syamal, SB Chiah, H Zhou, L Yuan 2012 IEEE 11th International Conference on Solid-State and Integrated …, 2012 | 4 | 2012 |
| Unified drain current model for independently driven double gate MOSFETs B Syamal, CK Sarkar, P Dutta, N Mohankumar 2010 International Conference on Microelectronics, 44-47, 2010 | 4 | 2010 |
Samar SahaProspicient DevicesDirección de correo verificada de ieee.org
