Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
1167 2018 Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL 2-like band DC Look, DC Walters, MO Manasreh, JR Sizelove, CE Stutz, KR Evans
Physical Review B 42 (6), 3578, 1990
383 1990 Non-polar and semi-polar GaN substrates, devices, and methods for making them AD Hanser, EA Preble, L Liu, TL Clites, KR Evans
US Patent 7,727,874, 2010
323 2010 GaN substrates for III-nitride devices T Paskova, DA Hanser, KR Evans
Proceedings of the IEEE 98 (7), 1324-1338, 2009
221 2009 AlGaAs/GaAs double barrier diodes with high peak‐to‐valley current ratio CI Huang, MJ Paulus, CA Bozada, SC Dudley, KR Evans, CE Stutz, ...
Applied physics letters 51 (2), 121-123, 1987
169 1987 Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of an EL 2-like defect MO Manasreh, DC Look, KR Evans, CE Stutz
Physical Review B 41 (14), 10272, 1990
164 1990 Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy F Hamdani, A Botchkarev, W Kim, H Morkoç, M Yeadon, JM Gibson, ...
Applied physics letters 70 (4), 467-469, 1997
152 1997 GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition JB Limb, D Yoo, JH Ryou, W Lee, SC Shen, RD Dupuis, ML Reed, ...
Applied physics letters 89 (1), 2006
141 2006 GaN substrates—Progress, status, and prospects T Paskova, KR Evans
IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1041-1052, 2009
133 2009 InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes X Ni, X Li, J Lee, S Liu, V Avrutin, Ü Özgür, H Morkoç, A Matulionis, ...
Applied Physics Letters 97 (3), 2010
118 2010 Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films JH Leach, K Udwary, J Rumsey, G Dodson, H Splawn, KR Evans
APL Materials 7 (2), 2019
108 2019 Sb-surface segregation and the control of compositional abruptness at the GaAsSbGaAs interface R Kaspi, KR Evans
Journal of Crystal Growth 175, 838-843, 1997
101 1997 Improved compositional abruptness at the InGaAs on GaAs interface by presaturation with In during molecular‐beam epitaxy R Kaspi, KR Evans
Applied physics letters 67 (6), 819-821, 1995
99 1995 Comparison of Ni/Au, Pd/Au, and Cr/Au metallizations for ohmic contacts to p-GaN JT Trexler, SJ Pearton, PH Holloway, MG Mier, KR Evans, RF Karlicek
MRS Online Proceedings Library (OPL) 449, 1091, 1996
85 1996 Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate Y Zhou, C Ahyi, T Isaacs-Smith, M Bozack, CC Tin, J Williams, M Park, ...
Solid-State Electronics 52 (5), 756-764, 2008
83 2008 Origin of the blueshift in the intersubband infrared absorption in GaAs/ As multiple quantum wells MO Manasreh, F Szmulowicz, T Vaughan, KR Evans, CE Stutz, ...
Physical Review B 43 (12), 9996, 1991
83 1991 Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes X Li, X Ni, J Lee, M Wu, Ü Özgür, H Morkoç, T Paskova, G Mulholland, ...
Applied Physics Letters 95 (12), 2009
80 2009 Alloy scattering in p ‐type Alx Ga1−x As DC Look, DK Lorance, JR Sizelove, CE Stutz, KR Evans, DW Whitson
Journal of applied physics 71 (1), 260-266, 1992
79 1992 Intersubband infrared absorption in a GaAs/Al0.3 Ga0.7 As quantum well structure MO Manasreh, F Szmulowicz, DW Fischer, KR Evans, CE Stutz
Applied physics letters 57 (17), 1790-1792, 1990
78 1990 Thermal properties of AlGaN/GaN HFETs on bulk GaN substrates N Killat, M Montes, JW Pomeroy, T Paskova, KR Evans, J Leach, X Li, ...
IEEE Electron device letters 33 (3), 366-368, 2012
77 2012