| Ground plane fin-shaped field effect transistor (GP-FinFET): A FinFET for low leakage power circuits M Saremi, A Afzali-Kusha, S Mohammadi Microelectronic Engineering 95, 74-82, 2012 | 100 | 2012 |
| Modeling of lightly doped drain and source graphene nanoribbon field effect transistors M Saremi, M Saremi, H Niazi, AY Goharrizi Superlattices and Microstructures 60, 67-72, 2013 | 65 | 2013 |
| A novel PNPN-like Z-shaped tunnel field-effect transistor with improved ambipolar behavior and RF performance RM Imenabadi, M Saremi, WG Vandenberghe IEEE transactions on electron devices 64 (11), 4752-4758, 2017 | 63 | 2017 |
| Armchair graphene nanoribbon resonant tunneling diodes using antidote and BN doping AY Goharrizi, M Zoghi, M Saremi IEEE Transactions on Electron Devices 63 (9), 3761-3768, 2016 | 58 | 2016 |
| A resonant tunneling nanowire field effect transistor with physical contractions: a negative differential resistance device for low power very large scale integration applications RMI Abadi, M Saremi Journal of Electronic Materials 47 (2), 1091-1098, 2018 | 48 | 2018 |
| A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement M Saremi, B Ebrahimi, A Afzali-Kusha, S Mohammadi Microelectronics Reliability 51 (12), 2069-2076, 2011 | 46 | 2011 |
| Band gap tuning of armchair graphene nanoribbons by using antidotes M Zoghi, AY Goharrizi, M Saremi Journal of Electronic Materials 46 (1), 340-346, 2017 | 43 | 2017 |
| Process variation study of ground plane SOI MOSFET M Saremi, B Ebrahimi, AA Kusha, M Saremi 2nd Asia symposium on quality electronic design (ASQED), 66-69, 2010 | 37 | 2010 |
| A physical-based simulation for the dynamic behavior of photodoping mechanism in chalcogenide materials used in the lateral programmable metallization cells M Saremi Solid State Ionics 290, 1-5, 2016 | 31 | 2016 |
| Static impedance behavior of programmable metallization cells S Rajabi, M Saremi, HJ Barnaby, A Edwards, MN Kozicki, M Mitkova, ... Solid-State Electronics 106, 27-33, 2015 | 29 | 2015 |
| SOI LDMOSFET with up and down extended stepped drift region M Saremi, M Saremi, H Niazi, M Saremi, AY Goharrizi Journal of Electronic Materials 46 (10), 5570-5576, 2017 | 28 | 2017 |
| Analysis of the reverse IV characteristics of diamond-based PIN diodes M Saremi, R Hathwar, M Dutta, FAM Koeck, RJ Nemanich, S Chowdhury, ... Applied Physics Letters 111 (4), 043507, 2017 | 26 | 2017 |
| Ground plane SOI MOSFET based SRAM with consideration of process variation M Saremi, B Ebrahimi, A Afzali-Kusha 2010 IEEE international conference of electron devices and solid-state …, 2010 | 24 | 2010 |
| The effects of process variation on the parametric model of the static impedance behavior of programmable metallization cell (PMC) M Saremi, S Rajabi, HJ Barnaby, MN Kozicki MRS Online Proceedings Library 1692 (1), 19-26, 2014 | 22 | 2014 |
| Analytical relationship between anion formation and carrier-trap statistics in chalcogenide glass films M Saremi, HJ Barnaby, A Edwards, MN Kozicki ECS Electrochemistry Letters 4 (7), H29, 2015 | 21 | 2015 |
| G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems H Aghababa, B Ebrahimi, M Saremi, V Moalemi, B Forouzandeh IEICE Electronics Express 9 (10), 881-887, 2012 | 20 | 2012 |
| A 4.5 μm PIN diamond diode for detecting slow neutrons J Holmes, M Dutta, FA Koeck, M Benipal, J Brown, B Fox, R Hathwar, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2018 | 19 | 2018 |
| Physically based predictive model for single event transients in CMOS gates M Saremi, A Privat, HJ Barnaby, LT Clark IEEE Transactions on Electron Devices 63 (6), 2248-2254, 2016 | 16 | 2016 |
| Modeling and simulation of the programmable metallization cells (PMCs) and diamond-based power devices M Saremi Arizona State University, 2017 | 14 | 2017 |
| Carrier mobility extraction method in ChGs in the UV light exposure M Saremi Micro & Nano Letters 11 (11), 762-764, 2016 | 12 | 2016 |
