| Gate-controlled quantum dots and superconductivity in planar germanium NW Hendrickx, DP Franke, A Sammak, M Kouwenhoven, D Sabbagh, ... Nature communications 9 (1), 2835, 2018 | 165 | 2018 |
| Shallow and undoped germanium quantum wells: a playground for spin and hybrid quantum technology A Sammak, D Sabbagh, NW Hendrickx, M Lodari, B Paquelet Wuetz, ... Advanced Functional Materials 29 (14), 1807613, 2019 | 136 | 2019 |
| Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process G Capellini, C Reich, S Guha, Y Yamamoto, M Lisker, M Virgilio, A Ghrib, ... Optics express 22 (1), 399-410, 2014 | 124 | 2014 |
| Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers M Bonfanti, E Grilli, M Guzzi, M Virgilio, G Grosso, D Chrastina, G Isella, ... Physical Review B—Condensed Matter and Materials Physics 78 (4), 041407, 2008 | 100 | 2008 |
| Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics J Frigerio, A Ballabio, G Isella, E Sakat, G Pellegrini, P Biagioni, M Bollani, ... Physical Review B 94 (8), 085202, 2016 | 98 | 2016 |
| Radiative recombination and optical gain spectra in biaxially strained -type germanium M Virgilio, CL Manganelli, G Grosso, G Pizzi, G Capellini Physical Review B—Condensed Matter and Materials Physics 87 (23), 235313, 2013 | 94 | 2013 |
| Type-I alignment and direct fundamental gap in SiGe based heterostructures M Virgilio, G Grosso Journal of Physics: Condensed Matter 18 (3), 1021, 2006 | 89 | 2006 |
| The thermal stability of epitaxial GeSn layers P Zaumseil, Y Hou, MA Schubert, N Von Den Driesch, D Stange, ... APL Materials 6 (7), 2018 | 80 | 2018 |
| Compression and diffusion: a joint approach to detect complexity P Allegrini, V Benci, P Grigolini, P Hamilton, M Ignaccolo, G Menconi, ... Chaos, Solitons & Fractals 15 (3), 517-535, 2003 | 77 | 2003 |
| Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions T Grange, D Stark, G Scalari, J Faist, L Persichetti, L Di Gaspare, ... Applied Physics Letters 114 (11), 2019 | 68 | 2019 |
| Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells G Pizzi, M Virgilio, G Grosso Nanotechnology 21 (5), 055202, 2009 | 60 | 2009 |
| Polarization-dependent absorption in Ge/SiGe multiple quantum wells: Theory and experiment M Virgilio, M Bonfanti, D Chrastina, A Neels, G Isella, E Grilli, M Guzzi, ... Physical Review B—Condensed Matter and Materials Physics 79 (7), 075323, 2009 | 56 | 2009 |
| Near-and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells Y Busby, M De Seta, G Capellini, F Evangelisti, M Ortolani, M Virgilio, ... Physical Review B—Condensed Matter and Materials Physics 82 (20), 205317, 2010 | 51 | 2010 |
| Dynamical systems and computable information V Benci, C Bonanno, S Galatolo, G Menconi, M Virgilio arXiv preprint cond-mat/0210654, 2002 | 45 | 2002 |
| Quantum-confined Stark effect in quantum wells: A tight-binding description M Virgilio, G Grosso Physical Review B—Condensed Matter and Materials Physics 77 (16), 165315, 2008 | 44 | 2008 |
| Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interfacial roughness scattering T Grange, S Mukherjee, G Capellini, M Montanari, L Persichetti, ... Physical Review Applied 13 (4), 044062, 2020 | 38 | 2020 |
| Conduction band intersubband transitions in Ge/SiGe quantum wells M De Seta, G Capellini, Y Busby, F Evangelisti, M Ortolani, M Virgilio, ... Applied Physics Letters 95 (5), 2009 | 38 | 2009 |
| Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained germanium layers M Virgilio, CL Manganelli, G Grosso, T Schroeder, G Capellini Journal of Applied Physics 114 (24), 2013 | 36 | 2013 |
| Control of Electron-State Coupling in Asymmetric Quantum Wells C Ciano, M Virgilio, M Montanari, L Persichetti, L Di Gaspare, M Ortolani, ... Physical Review Applied 11 (1), 014003, 2019 | 34 | 2019 |
| Physical mechanisms of intersubband-absorption linewidth broadening in -Ge/SiGe quantum wells M Virgilio, D Sabbagh, M Ortolani, L Di Gaspare, G Capellini, M De Seta Physical Review B 90 (15), 155420, 2014 | 34 | 2014 |
Giovanni CapelliniFull Professor, Università Roma Tre and IHP Leibniz Institute for High Performance MicroelectronicsVerified email at uniroma3.it
