Role of gallium doping in dramatically lowering amorphous‐oxide processing temperatures for solution‐derived indium zinc oxide thin‐film transistors S Jeong, YG Ha, J Moon, A Facchetti, TJ Marks Advanced Materials 22 (12), 1346-1350, 2010 | 588 | 2010 |
High-performance solution-processed amorphous zinc− indium− tin oxide thin-film transistors MG Kim, HS Kim, YG Ha, J He, MG Kanatzidis, A Facchetti, TJ Marks journal of the American Chemical society 132 (30), 10352-10364, 2010 | 287 | 2010 |
Transparent active matrix organic light-emitting diode displays driven by nanowire transistor circuitry S Ju, J Li, J Liu, PC Chen, Y Ha, F Ishikawa, H Chang, C Zhou, ... Nano letters 8 (4), 997-1004, 2008 | 286 | 2008 |
Printable cross-linked polymer blend dielectrics. Design strategies, synthesis, microstructures, and electrical properties, with organic field-effect transistors as testbeds C Kim, Z Wang, HJ Choi, YG Ha, A Facchetti, TJ Marks Journal of the American Chemical Society 130 (21), 6867-6878, 2008 | 138 | 2008 |
Flexible low-voltage organic thin-film transistors enabled by low-temperature, ambient solution-processable inorganic/organic hybrid gate dielectrics Y Ha, S Jeong, J Wu, MG Kim, VP Dravid, A Facchetti, TJ Marks Journal of the American Chemical Society 132 (49), 17426-17434, 2010 | 133 | 2010 |
Solution-deposited organic–inorganic hybrid multilayer gate dielectrics. Design, synthesis, microstructures, and electrical properties with thin-film transistors Y Ha, JD Emery, MJ Bedzyk, H Usta, A Facchetti, TJ Marks Journal of the American Chemical Society 133 (26), 10239-10250, 2011 | 127 | 2011 |
High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays PC Chen, G Shen, H Chen, Y Ha, C Wu, S Sukcharoenchoke, Y Fu, J Liu, ... ACS nano 3 (11), 3383-3390, 2009 | 125 | 2009 |
Hybrid gate dielectric materials for unconventional electronic circuitry YG Ha, K Everaerts, MC Hersam, TJ Marks Accounts of chemical research 47 (4), 1019-1028, 2014 | 122 | 2014 |
Liquid metal based island‐bridge architectures for all printed stretchable electrochemical devices CA Silva, J Lv, L Yin, I Jeerapan, G Innocenzi, F Soto, YG Ha, J Wang Advanced Functional Materials 30 (30), 2002041, 2020 | 103 | 2020 |
How water meets a very hydrophobic surface S Chattopadhyay, A Uysal, B Stripe, Y Ha, TJ Marks, EA Karapetrova, ... Physical review letters 105 (3), 037803, 2010 | 98 | 2010 |
Low-temperature solution-processed amorphous indium tin oxide field-effect transistors HS Kim, MG Kim, YG Ha, MG Kanatzidis, TJ Marks, A Facchetti Journal of the American Chemical Society 131 (31), 10826-10827, 2009 | 88 | 2009 |
Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent IV measurements S Ju, S Kim, S Mohammadi, DB Janes, YG Ha, A Facchetti, TJ Marks Applied Physics Letters 92 (2), 2008 | 83 | 2008 |
Studies of tetracene-and pentacene-based organic thin-film transistors fabricated by the neutral cluster beam deposition method PS Abthagir, YG Ha, EA You, SH Jeong, HS Seo, JH Choi The Journal of Physical Chemistry B 109 (50), 23918-23924, 2005 | 76 | 2005 |
1∕ f noise of Sn O 2 nanowire transistors S Ju, P Chen, C Zhou, Y Ha, A Facchetti, TJ Marks, SK Kim, ... Applied Physics Letters 92 (24), 243120, 2008 | 75 | 2008 |
Fabrication and characterization of OLEDs using MEH-PPV and SWCNT nanocomposites YG Ha, EA You, BJ Kim, JH Choi Synthetic metals 153 (1-3), 205-208, 2005 | 59 | 2005 |
High Electron Mobility in [1]Benzothieno[3,2-b][1]benzothiophene-Based Field-Effect Transistors: Toward n-Type BTBTs H Usta, D Kim, R Ozdemir, Y Zorlu, S Kim, MC Ruiz Delgado, ... Chemistry of Materials 31 (14), 5254-5263, 2019 | 58 | 2019 |
High performance In2O3 nanowire transistors using organic gate nanodielectrics S Ju, F Ishikawa, P Chen, HK Chang, C Zhou, Y Ha, J Liu, A Facchetti, ... Applied Physics Letters 92 (22), 2008 | 55 | 2008 |
Weibull analysis of dielectric breakdown in a self-assembled nanodielectric for organic transistors RA Schlitz, KH Yoon, LA Fredin, Y Ha, MA Ratner, TJ Marks, LJ Lauhon The Journal of Physical Chemistry Letters 1 (22), 3292-3297, 2010 | 54 | 2010 |
Self-assembled nanodielectrics and silicon nanomembranes for low voltage, flexible transistors, and logic gates on plastic substrates HS Kim, SM Won, YG Ha, JH Ahn, A Facchetti, TJ Marks, JA Rogers Applied Physics Letters 95 (18), 2009 | 45 | 2009 |
Push− Pull π-Electron Phosphonic-Acid-Based Self-Assembled Multilayer Nanodielectrics Fabricated in Ambient for Organic Transistors Y Ha, A Facchetti, TJ Marks Chemistry of Materials 21 (7), 1173-1175, 2009 | 31 | 2009 |