Device electronics for integrated circuits RS Muller, TI Kamins
John Wiley & Sons, 2002
2979 2002 Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes G Medeiros-Ribeiro, AM Bratkovski, TI Kamins, DAA Ohlberg, RS Williams
Science 279 (5349), 353-355, 1998
1051 1998 Sequence-specific label-free DNA sensors based on silicon nanowires Z Li, Y Chen, X Li, TI Kamins, K Nauka, RS Williams
nano letters 4 (2), 245-247, 2004
982 2004 Strong quantum-confined Stark effect in germanium quantum-well structures on silicon YH Kuo, YK Lee, Y Ge, S Ren, JE Roth, TI Kamins, DAB Miller, JS Harris
Nature 437 (7063), 1334-1336, 2005
975 2005 Hall mobility in chemically deposited polycrystalline silicon TI Kamins
Journal of applied physics 42 (11), 4357-4365, 1971
634 1971 Dopant segregation in polycrystalline silicon MM Mandurah, KC Saraswat, CR Helms, TI Kamins
Journal of applied physics 51 (11), 5755-5763, 1980
483 1980 Photovoltaic retinal prosthesis with high pixel density K Mathieson, J Loudin, G Goetz, P Huie, L Wang, TI Kamins, L Galambos, ...
Nature photonics 6 (6), 391-397, 2012
481 2012 Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms TI Kamins, R Stanley Williams, DP Basile, T Hesjedal, JS Harris
Journal of Applied Physics 89 (2), 1008-1016, 2001
432 2001 Deposition of three-dimensional Ge islands on Si (001) by chemical vapor deposition at atmospheric and reduced pressures TI Kamins, EC Carr, RS Williams, SJ Rosner
Journal of Applied Physics 81 (1), 211-219, 1997
391 1997 Photovoltaic restoration of sight with high visual acuity H Lorach, G Goetz, R Smith, X Lei, Y Mandel, T Kamins, K Mathieson, ...
Nature medicine 21 (5), 476-482, 2015
353 2015 Lithographic positioning of self-assembled Ge islands on Si (001) TI Kamins, RS Williams
Applied Physics Letters 71 (9), 1201-1203, 1997
333 1997 Increased photoluminescence of strain-reduced, high-Sn composition Ge1− xSnx alloys grown by molecular beam epitaxy R Chen, H Lin, Y Huo, C Hitzman, TI Kamins, JS Harris
Applied physics letters 99 (18), 2011
328 2011 Evolution of Ge islands on Si (001) during annealing TI Kamins, G Medeiros-Ribeiro, DAA Ohlberg, R Stanley Williams
Journal of Applied Physics 85 (2), 1159-1171, 1999
316 1999 Growth and structure of chemically vapor deposited Ge nanowires on Si substrates TI Kamins, X Li, RS Williams, X Liu
Nano Letters 4 (3), 503-506, 2004
282 2004 Structure and stability of low pressure chemically vapor‐deposited silicon films TI Kamins, MM Mandurah, KC Saraswat
Journal of the Electrochemical Society 125 (6), 927, 1978
267 1978 Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces MS Islam, S Sharma, TI Kamins, RS Williams
Nanotechnology 15 (5), L5, 2004
255 2004 Optical modulator on silicon employing germanium quantum wells JE Roth, O Fidaner, RK Schaevitz, YH Kuo, TI Kamins, JS Harris, ...
Optics Express 15 (9), 5851-5859, 2007
249 2007 A generalized description of the elastic properties of nanowires A Heidelberg, LT Ngo, B Wu, MA Phillips, S Sharma, TI Kamins, JE Sader, ...
Nano letters 6 (6), 1101-1106, 2006
241 2006 Chemical vapor deposition of Si nanowires nucleated by TI Kamins, RS Williams, Y Chen, YL Chang, YA Chang
Applied Physics Letters 76 (5), 562-564, 2000
231 2000 Nano-graphoepitaxy of semiconductors for 3D integration F Crnogorac, DJ Witte, Q Xia, B Rajendran, DS Pickard, Z Liu, A Mehta, ...
Microelectronic Engineering 84 (5-8), 891-894, 2007
226 2007 