Pei-Cheng Ku
Pei-Cheng Ku
Professor of electrical engineering and computer science, University of Michigan
Verified email at
Cited by
Cited by
Slow-light optical buffers: capabilities and fundamental limitations
RS Tucker, PC Ku, CJ Chang-Hasnain
Journal of lightwave technology 23 (12), 4046, 2005
Monolithically integrated μLEDs on silicon neural probes for high-resolution optogenetic studies in behaving animals
F Wu, E Stark, PC Ku, KD Wise, G Buzsáki, E Yoon
Neuron 88 (6), 1136-1148, 2015
Variable optical buffer using slow light in semiconductor nanostructures
CJ Chang-Hasnain, P Ku, J Kim, S Chuang
Proceedings of the IEEE 91 (11), 1884-1897, 2003
Slow light in semiconductor quantum wells
PC Ku, F Sedgwick, CJ Chang-Hasnain, P Palinginis, T Li, H Wang, ...
Optics Letters 29 (19), 2291-2293, 2004
Slow light using semiconductor quantum dots
J Kim, SL Chuang, PC Ku, CJ Chang-Hasnain
Journal of Physics: Condensed Matter 16 (35), S3727, 2004
Variable semiconductor all-optical buffer
PC Ku, CJ Chang-Hasnain, SL Chuang
Electronics Letters 38 (24), 1, 2002
Observation of the Crab Nebula with LHAASO-KM2A− a performance study
F Aharonian, Q An, LX Bai, YX Bai, YW Bao, D Bastieri, XJ Bi, YJ Bi, H Cai, ...
Chinese Physics C 45 (2), 025002, 2021
Delay-bandwidth product and storage density in slow-light optical buffers
RS Tucker, PC Ku, CJ Chang-Hasnain
Electronics Letters 41 (4), 1, 2005
Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations
CM Jones, CH Teng, Q Yan, PC Ku, E Kioupakis
Applied Physics Letters 111 (11), 2017
Photoluminescence study of semipolar {101Ż 1} InGaN∕ GaN multiple quantum wells grown by selective area epitaxy
H Yu, LK Lee, T Jung, PC Ku
Applied Physics Letters 90 (14), 2007
Single photon emission from site-controlled InGaN/GaN quantum dots
L Zhang, CH Teng, TA Hill, LK Lee, PC Ku, H Deng
Applied Physics Letters 103 (19), 2013
Monolithic integration of individually addressable light-emitting diode color pixels
K Chung, J Sui, B Demory, CH Teng, PC Ku
Applied Physics Letters 110 (11), 2017
Slow light in semiconductor heterostructures
PC Ku, CJ Chang-Hasnain, SL Chuang
Journal of Physics D: Applied Physics 40 (5), R93, 2007
Slow light using excitonic population oscillation
SW Chang, SL Chuang, PC Ku, CJ Chang-Hasnian, P Palinginis, H Wang
Physical Review B 70 (23), 235333, 2004
Handbook of GaN semiconductor materials and devices
WW Bi, HH Kuo, P Ku, B Shen
CRC Press, 2017
How much better are InGaN/GaN nanodisks than quantum wells—Oscillator strength enhancement and changes in optical properties
L Zhang, LK Lee, CH Teng, TA Hill, PC Ku, H Deng
Applied Physics Letters 104 (5), 2014
Radiation hardness qualification of PbWO4 scintillation crystals for the CMS Electromagnetic Calorimeter
P Adzic, N Almeida, D Andelin, I Anicin, Z Antunovic, R Arcidiacono, ...
Journal of instrumentation 5 (03), P03010, 2010
Color mixing from monolithically integrated InGaN-based light-emitting diodes by local strain engineering
K Chung, J Sui, B Demory, PC Ku
Applied Physics Letters 111 (4), 2017
Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography
SW Wang, KB Hong, YL Tsai, CH Teng, AJ Tzou, YC Chu, PT Lee, PC Ku, ...
Scientific reports 7 (1), 42962, 2017
Elliptical quantum dots as on-demand single photons sources with deterministic polarization states
CH Teng, L Zhang, TA Hill, B Demory, H Deng, PC Ku
Applied Physics Letters 107 (19), 2015
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