Magnetic memory element and nonvolatile memory device D Saida, M Amano, Y Ohsawa, J Ito, H Yoda
US Patent 8,716,817, 2014
152 2014 Magnetic recording device and magnetic recording apparatus S Nakamura, H Morise, S Yanagi, D Saida, A Kikitsu
US Patent 8,085,582, 2011
84 2011 Magnetic recording element and nonvolatile memory device D Saida, M Amano, J Ito, Y Ohsawa, S Kashiwada, C Kamata, ...
US Patent 8,488,375, 2013
55 2013 Magnetic element and nonvolatile memory device D Saida, M Amano, J Ito, Y Ohsawa, S Kashiwada, C Kamata, T Daibou
US Patent 8,576,616, 2013
49 2013 Magnetic memory element and nonvolatile memory device D Saida, M Amano, H Imamura
US Patent 9,025,368, 2015
43 2015 Nonvolatile memory device D Saida, M Amano, T Nagasawa, Y Ohsawa, J Ito
US Patent 8,737,122, 2014
43 2014 Magnetoresistive element and magnetic memory T Daibou, M Amano, D Saida, J Ito, Y Ohsawa, C Kamata, S Kashiwada, ...
US Patent 8,878,317, 2014
42 2014 Magnetic memory element and nonvolatile memory device D Saida, M Amano, J Ito
US Patent 8,582,355, 2013
37 2013 Magnetic memory S Yanagi, Y Ohsawa, S Nakamura, D Saida, H Morise
US Patent 8,077,509, 2011
37 2011 Magnetic element and memory device D Saida
US Patent 10,096,771, 2018
36 2018 Magnetic recording element and nonvolatile memory device D Saida, M Amano, J Ito, Y Ohsawa, S Kashiwada, C Kamata, T Daibou
US Patent 8,508,979, 2013
35 2013 Sub-3 ns pulse with sub-100 µA switching of 1x–2x nm perpendicular MTJ for high-performance embedded STT-MRAM towards sub-20 nm CMOS D Saida, S Kashiwada, M Yakabe, T Daibou, N Hase, M Fukumoto, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
32 2016 Low power and high density STT-MRAM for embedded cache memory using advanced perpendicular MTJ integrations and asymmetric compensation techniques K Ikegami, H Noguchi, C Kamata, M Amano, K Abe, K Kushida, ...
2014 IEEE International Electron Devices Meeting, 28.1. 1-28.1. 4, 2014
32 2014 Method of manufacturing magnetic memory Y Ohsawa, S Takahashi, J Ito, D Saida, K Suguro, H Yoda
US Patent 8,716,034, 2014
32 2014 Magnetoresistive element and magnetic memory T Daibou, M Amano, D Saida, J Ito, Y Ohsawa, C Kamata, S Kashiwada, ...
US Patent 9,299,918, 2016
29 2016 Memory system, semiconductor storage device, and signal processing system D Saida, Y Isowaki, MA Quinsat, K Yamada, K Tatsumura
US Patent 10,388,350, 2019
28 2019 Magnetic memory element and memory device D Saida, M Amano, J Ozeki, N Shimomura
US Patent 9,818,464, 2017
28 2017 Magnetic memory N Shimomura, E Kitagawa, C Kamata, M Amano, Y Ohsawa, D Saida, ...
US Patent 8,994,131, 2015
26 2015 Magnetization switching by current and microwaves T Taniguchi, D Saida, Y Nakatani, H Kubota
Physical Review B 93 (1), 014430, 2016
25 2016 - to -nm perpendicular MTJ Switching at Sub-3-ns Pulses Below A for High-Performance Embedded STT-MRAM for Sub-20-nm CMOSD Saida, S Kashiwada, M Yakabe, T Daibou, M Fukumoto, S Miwa, ...
IEEE Transactions on Electron Devices 64 (2), 427-431, 2016
24 2016