Solution using a codoping method to unipolarity for the fabrication of p-type ZnO T Yamamoto, H Katayama-Yoshida Japanese Journal of Applied Physics 38 (2B), L166, 1999 | 787 | 1999 |
Codoping for the fabrication of p-type ZnO T Yamamoto Thin solid films 420, 100-106, 2002 | 239 | 2002 |
Physics and control of valence states in ZnO by codoping method T Yamamoto, H Katayama-Yoshida Physica B: Condensed Matter 302, 155-162, 2001 | 239 | 2001 |
Control of valence states for ZnS by triple-codoping method T Yamamoto, S Kishimoto, S Iida Physica B: Condensed Matter 308, 916-919, 2001 | 201 | 2001 |
Unipolarity of ZnO with a wide-band gap and its solution using codoping method T Yamamoto, H Katayama-Yoshida Journal of crystal growth 214, 552-555, 2000 | 177 | 2000 |
Focusing of MeV ion beams by means of tapered glass capillary optics T Nebiki, T Yamamoto, T Narusawa, MBH Breese, EJ Teo, F Watt Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 21 (5 …, 2003 | 175 | 2003 |
Development of Ga-doped ZnO transparent electrodes for liquid crystal display panels N Yamamoto, H Makino, S Osone, A Ujihara, T Ito, H Hokari, T Maruyama, ... Thin Solid Films 520 (12), 4131-4138, 2012 | 170 | 2012 |
Ingrain and grain boundary scattering effects on electron mobility of transparent conducting polycrystalline Ga-doped ZnO films T Yamada, H Makino, N Yamamoto, T Yamamoto Journal of Applied Physics 107 (12), 2010 | 164 | 2010 |
Materials design for the fabrication of low-resistivity p-type GaN using a codoping method T Yamamoto, H Katayama-Yoshida Japanese journal of applied physics 36 (2B), L180, 1997 | 151 | 1997 |
Defect centers and optical absorption edge of degenerated semiconductor ZnO thin films grown by a reactive plasma deposition by means of piezoelectric photothermal spectroscopy K Sakai, T Kakeno, T Ikari, S Shirakata, T Sakemi, K Awai, T Yamamoto Journal of Applied Physics 99 (4), 2006 | 128 | 2006 |
Low resistivity Ga-doped ZnO thin films of less than 100nm thickness prepared by ion plating with direct current arc discharge T Yamada, A Miyake, S Kishimoto, H Makino, N Yamamoto, T Yamamoto Applied Physics Letters 91 (5), 2007 | 126 | 2007 |
Cerium oxide and hydrogen co-doped indium oxide films for high-efficiency silicon heterojunction solar cells E Kobayashi, Y Watabe, T Yamamoto, Y Yamada Solar Energy Materials and Solar Cells 149, 75-80, 2016 | 118 | 2016 |
Dependence of carrier concentrations on oxygen pressure for Ga-doped ZnO prepared by ion plating method T Yamamoto, T Sakemi, K Awai, S Shirakata Thin solid films 451, 439-442, 2004 | 86 | 2004 |
The effects of oxygen partial pressure on local structural properties for Ga-doped ZnO thin films M Osada, T Sakemi, T Yamamoto Thin Solid Films 494 (1-2), 38-41, 2006 | 79 | 2006 |
Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD) K Iwata, T Sakemi, A Yamada, P Fons, K Awai, T Yamamoto, S Shirakata, ... Thin Solid Films 480, 199-203, 2005 | 77 | 2005 |
Codoping Method for Solutions of Doping Problems in Wide‐Band‐Gap Semiconductors T Yamamoto physica status solidi (a) 193 (3), 423-433, 2002 | 77 | 2002 |
Effects of substrate temperature on crystallinity and electrical properties of Ga-doped ZnO films prepared on glass substrate by ion-plating method using DC arc discharge T Yamada, A Miyake, S Kishimoto, H Makino, N Yamamoto, T Yamamoto Surface and Coatings Technology 202 (4-7), 973-976, 2007 | 75 | 2007 |
Influence of substrate temperature and Zn-precursors on atomic layer deposition of polycrystalline ZnO films on glass H Makino, A Miyake, T Yamada, N Yamamoto, T Yamamoto Thin Solid Films 517 (10), 3138-3142, 2009 | 69 | 2009 |
Growth and electrical properties of ZnO thin films deposited by novel ion plating method K Iwata, T Sakemi, A Yamada, P Fons, K Awai, T Yamamoto, M Matsubara, ... Thin Solid Films 445 (2), 274-277, 2003 | 68 | 2003 |
Electrical and optical properties of large area Ga-doped ZnO thin films prepared by reactive plasma deposition S Shirakata, T Sakemi, K Awai, T Yamamoto Superlattices and Microstructures 39 (1-4), 218-228, 2006 | 65 | 2006 |